Reactive Ion Etching Characteristics of 3C-SiC Grown on Si Wafers

Gwiy Sang Chung; Soo Yong Chung; Shigehiro Nishino

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센서,기능성 박막 ; Si(100)기판위에 성장된 3C-SiC 박막의 반응성 이온식각 특성

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Reactive Ion Etching Characteristics of 3C-SiC Grown on Si Wafers

Gwiy Sang Chung, Soo Yong Chung, Shigehiro Nishino

J Electr Electron Mater 2004;17(7):724-728.
Published online: July 1, 2004

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Keywords: RIE, 3C-SiC, CHF3, O2, Etching-rate, Flatness

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Reactive Ion Etching Characteristics of 3C-SiC Grown on Si Wafers

J Electr Electron Mater. 2004;17(7):724-728. Published online July 1, 2004

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Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

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Reactive Ion Etching Characteristics of 3C-SiC Grown on Si Wafers

J Electr Electron Mater. 2004;17(7):724-728. Published online July 1, 2004

Articles

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센서,기능성 박막 ; Si(100)기판위에 성장된 3C-SiC 박막의 반응성 이온식각 특성

Reactive Ion Etching Characteristics of 3C-SiC Grown on Si Wafers

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