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반도체 / 도핑되지 않은 비정질 실리콘의 고밀도 Cl2/HBr/O2 플라즈마에 의한 식각 시 나칭 효과

유석빈, 김남훈, 김창일, 장의구

Notching Effect during the Etching of Undoped Amorphous Silicon using High Density Cl2/HBr/O2 Plasma

Seok Bin Yu, Nam Hoon Kim, Chang Il Kim, Eui Goo Chang
J Electr Electron Mater 2000;13(8):651-657.
Published online: August 1, 2000
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Notching Effect during the Etching of Undoped Amorphous Silicon using High Density Cl2/HBr/O2 Plasma
J Electr Electron Mater. 2000;13(8):651-657.   Published online August 1, 2000
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

Format:
Include:
Notching Effect during the Etching of Undoped Amorphous Silicon using High Density Cl2/HBr/O2 Plasma
J Electr Electron Mater. 2000;13(8):651-657.   Published online August 1, 2000
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