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반도체 / 완화된 또는 응력변형을 겪는 Ge 과 Ge0.8Sn0.2 에서 전자와 정공의 상태밀도 유효질량과 전도도 유효질량

박일수, 전상국

The density - of - states effective mass and conductivity effective mass of electrons and holes in relaxed or strained Ge and Ge0.8Sn0.2

Il Soo Park, Sang Kook Chun
J Electr Electron Mater 2000;13(8):643-650.
Published online: August 1, 2000
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The density - of - states effective mass and conductivity effective mass of electrons and holes in relaxed or strained Ge and Ge0.8Sn0.2
J Electr Electron Mater. 2000;13(8):643-650.   Published online August 1, 2000
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

Format:
Include:
The density - of - states effective mass and conductivity effective mass of electrons and holes in relaxed or strained Ge and Ge0.8Sn0.2
J Electr Electron Mater. 2000;13(8):643-650.   Published online August 1, 2000
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