Effective surface area and morphology of a sensitive thin film are important factors for its applications in sensor systems for the analysis of physical properties. In this study, we investigated the morphologies, electrochemical properties, and applicability of zinc oxide multilayer thin films fabricated by electrodeposition and annealing. The microstructure and electrochemical properties of the zinc oxide films were dependent on temperature and applied voltage. The best characteristics were obtained at an applied voltage of -1.4 V and a temperature of 50℃. The morphologies also changed upon annealing. The results suggest that the zinc oxide films fabricated by electrodeposition and annealing can be applied as various sensor materials.

The Gallium-doped ZnO(GZO) film deposited at a temperature of 200℃ and a pressure of 10 mtorr has an optical transmittance of 89.0% and a resistivity of 2.0 mΩ·cm because of its high crystallinity. Effect of Al2O3 oxide buffer layers on the optical and electrical properties of sputtered ZnO films were intensively investigated for developing the electrodes of opto-electronic devices which demanded high optical transmittance and low resistivity. The use of Al2O3 buffer layer could increase optical transmittance of GZO film to 90.7% at a wavelength of 550 nm by controlling optical spectrum. Resistivity of deposited GZO films were much dependent on the deposition condition of O2/(Ar+O2) flow rate ratio during the buffer layer deposition. It is considered that the Al2O3 buffer layer could increase the carrier concentration of the GZO films by doping effect of diffused Al atoms through the rough interface.

The semiconducting material of ZnO in II-VI group was well known as its good application for photo electronics, chemical sensors and field effect transistors due to the remarkable optical properties with wide energy band gap and great ionic reactivities. Up to now the growth of a good quality of ZnO film has been issued for better performances. Even though there were many deposition methods for making ZnO films, pulse laser deposition methods have been preferred for high crystalline films. In this report, the ZnO film was also created by pulsed laser deposition technique which also showed high crystalinity. By controlling several factors when deposited, it was investigated that the optimal condition for ZnO film formation. Mainly, oxygen partial pressures and growth temperatures were changed when ZnO films were synthesized and followed the characterization by HRXRD and AFM.