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"Transparent photoelectric devices"

ITO Nanowires-embedded Transparent Metal-oxide Semiconductor Photoelectric Devices
Hyunki Kim, Hong Sik Kim, Malkeshkumar Patel, Joondong Kima
J Electr Electron Mater 2015;28(12):808-812.   Published online December 1, 2015
Highly optical transparent photoelectric devices were realized by using a transparent metal-oxide semiconductor heterojunction of p-type NiO and n-type ZnO. A functional template of ITO nanowires (NWs) was applied to this transparent heterojunction device to enlarge the light-reactive surface. The ITO NWs/n-ZnO/p-NiO heterojunction device provided a significant high rectification ratio of 275 with a considerably low reverse saturation current of 0.2 nA. The optical transparency was about 80% for visible wavelengths, however showed an excellent blocking UV light. The nanostructured transparent heterojunction devices were applied for UV photodetectors to show ultra fast photoresponses with a rise time of 8.3 mS and a fall time of 20 ms, respectively. We suggest this transparent and super-performing UV responser can practically applied in transparent electronics and smart window applications.
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