Dye-sensitized solar cells (DSSCs) suffer from efficiency limitations due to interfacial charge recombination at the TiO₂/dye/electrolyte interface. In this study, aminopropyltrimethoxysilane (APS) was introduced onto nanoporous TiO₂ photoelectrodes via a dip-coating process with controlled coating times to investigate the effect of silanization time on interfacial charge transport behavior. Unlike concentration-driven structural modification, this work focuses on the evolution of the APS-modified interface governed by reaction time. The DSSC with 30 min APS treatment exhibited the highest power conversion efficiency of 5.34%, representing a 19% enhancement compared to the untreated device (4.49%), mainly due to increased short-circuit current density and open-circuit voltage. However, prolonged coating times (2 h and 24 h) resulted in a significant decrease in photocurrent density, leading to reduced device performance despite partial improvement in recombination resistance. These results are attributed to the time-dependent evolution of the APS interfacial layer. At moderate coating time, APS provides effective surface functionalization, enhancing dye adsorption and suppressing interfacial recombination. In contrast, prolonged coating is expected to induce increased surface coverage and silane condensation, which can hinder electron injection and increase charge transport resistance. Therefore, the photovoltaic performance is governed by a trade-off between recombination suppression and charge injection efficiency, controlled by the silanization time. This study highlights the critical role of interfacial reaction kinetics in determining charge transport behavior and provides an effective strategy for optimizing DSSC performance through time-dependent interface engineering.

Citations

• Enhanced charge transport characteristics of hydrothermally grown rutile TiO2 nanorod arrays for dye-sensitized solar cells
  Kyu Seop Choi, Hyung Jin Kim, Byungyou Hong
  Surfaces and Interfaces.2026; 98: 110402.     CrossRef

The solution-based fabrication process for resistive random-access memory (ReRAM) offers several advantages over conventional vapor deposition processes, including simplicity, cost-effectiveness, and high versatility for coating complex structures over large areas. In this study, a TiO₂-based ReRAM device was fabricated using a solution process with Pt top and P⁺⁺-Si bottom electrodes. The synthesized TiO₂ films contain a residual Cl element as revealed by X-ray photoelectron spectroscopy (XPS). Reversible volatile resistance switching was observed due to the formation of conductive Ti-O-Ti networks in the TiO₂ layer. Post-annealing led to an increase in the threshold voltage (Vth). Asymmetric Current-Voltage characteristics was observed due to the different in the work functions of the electrodes. Additionally, the influence of compliance current settings on filament formation and hysteresis behavior was systematically investigated. The results demonstrated that higher compliance currents enhanced the hysteresis width for both positive and negative voltage bias conditions.

Citations

• Pulse Response Measurement Optimization of ReRAM-Based Neuromorphic Devices
  Soon Joo Yoon, Yoon Kyeung Lee
  Journal of Electrical and Electronic Materials.2026; 39(3): 258.     CrossRef

Dielectric resonators with BT (BaTiO₃), TiO₂, and ZrO₂ powders without using the rare earth oxide powders were fabricated for the target relative permittivity of between 30 and 40 and the filter characteristics of metal cavity filter with the dielectric resonators inside were evaluated. Powder characteristics such as particle size distributions and specific surface areas were measured for the composing raw powders to evaluate the powder states. After measuring and comparing the relative permittivity and dielectric losses of the dielectrics of three different compositions, the specific composition was determined (BT:TiO₂:ZrO₂=1:4:1 in mole) and the dielectric resonators were fabricated with that composition, which shows relative permittivity of around 35. The powder characteristics of mixed powders with the determined composition were also evaluated to investigate any agglomerates possibly formed in the process of powder mixing. Dielectric resonators were fabricated by the powder compaction (compaction pressure: 31 MPa) and firing method. The peak firing temperature was 1,300℃ and the holding time at the peak temperature was 3 hours. After firing, cylindrical resonators with one end closed were mechanically machined to eliminate any size differences in dielectric resonator which can be caused by the shrinkage difference during each firing process of resonator fabrication. After measuring the resonator characteristic in the frequency range from 3.6 GHz to 3.8 GHz by changing the height of dielectric resonator, the height of the resonator was determined to be 11.7 mm. Finally, filter characteristics of TM (Transverse Magnetic) mode metal cavity filters with the dielectric inside were measured and evaluated. The metal cavity filters with the dielectric resonators showed the insertion losses of below 1 dB with the band widths of 200 MHz and over 20 dB return losses from 3.6 GHz to 3.8 GHz, whose filter characteristics well satisfied the requirements of the band pass filters for the base stations and it was proved that the dielectrics using the proposed composition could be used as dielectric resonator.

Titanium dioxide (TiO₂) holds significant scientific and technological relevance as a key photocatalyst and resistive random-access memory, demonstrating unique physicochemical properties and serving as an n-type semiconductor. Understanding the density and arrangement of oxygen vacancies (VOs) is crucial for tailoring TiO₂’s properties to diverse technological needs, driving increased interest in exploring oxygen vacancy complexes and superstructures. In this mini review, we summarize the recent understandings of the fundamental properties of oxygen vacancies in bulk rutile (R-TiO₂) and anatase (A-TiO₂) based on DFT and beyond method. We specifically focus on the excess electrons and their spatial arrangement of disordered single VO in bulk R and A-TiO₂, aligned with the experimental findings. We also highlight the theoretical works on investigating the geometries and stabilities of ordered VOs complexes in bulk TiO₂. This comprehensive review provides insights into the fundamental properties of excess electrons in reduced TiO₂, offering valuable perspectives for future research and technological advancements in TiO₂-based devices.