Wearable temperature sensors are becoming increasingly important for continuous health monitoring, personalized healthcare, and biointegrated electronic systems. However, conventional temperature-sensing platforms often suffer from limited thermal sensitivity, insufficient mechanical compliance, and unstable performance under repeated deformation, making it difficult to detect subtle physiological temperature variations in real time. Here, this tutorial status report presents a fabrication strategy for highly sensitive wearable temperature sensors based on gold-doped crystalline silicon nanomembranes. Gold diffusion into crystalline silicon introduces deep-level impurity states that modulate the Fermi level and shift the freeze-out region toward the physiological temperature range, enabling an ultrahigh negative temperature coefficient of resistance. By integrating the gold-doped silicon nanomembrane with a polyimide-supported ultrathin platform, neutral mechanical plane design, and serpentine mesh interconnects, the resulting device can provide high thermal sensitivity, fast response, conformal skin attachment, and stable operation under mechanical deformation. This fabrication approach is expected to broaden the use of impurity-engineered silicon nanomembranes in next-generation wearable sensors, flexible bioelectronics, and multifunctional healthcare monitoring systems.
The low-temperature coefficient of resistance (TCR) is a crucial factor in the development of space-grade resistors for temperature stability. Consequently, extensive research is underway to achieve zero TCR. In this study, resistors were deposited by co-sputtering nickel-chromium-based composite compositions, metals showing positive TCR, with SiO2, introducing negative TCR components. It was observed that achieving zero TCR is feasible by adjusting the proportion of negative TCR components in the deposited thin film resistors within certain compositions. Additionally, the correlation between TCR and deposition conditions, such as sputtering power, Ar pressure, and surface roughness, was investigated. We anticipate that these findings will contribute to the study of resistors with very low TCR, thereby enhancing the reliability of space-level resistors operating under high temperatures.
We prepared carbon nanotube (CNT) paper by a vacuum filtration method for the use of a chip-typed resistor as a precision passive device with a constant resistance. Hybrid resistor composed of the CNT resistor with a negative temperature coefficient of resistance (T.C.R) and a metal alloy resistor with a positive T.C.R could lead to a constant resistance, because the resistance increase owing to the temperature increase at the metal alloy and decrease at the CNT could counterbalance each other. The constant resistance for the precision passive devices should be maintained even when a heat was generated by a current flow resulting in resistance change. Performance reliabilities of the CNT resistor for the precision passive device applications such as electrical load limit, environmental load limit, and life limit specified in IEC 60115-1 must be ensured. In this study, therefore, the rated power determination and T.C.R tests of the CNT paper were conducted. -900~-700 ppm/℃ of TCR, 0.1~0.2 A of the carrying current capacity, and 0.0625~0.125 W of the rated power limit were obtained from the CNT paper. Consequently, we confirmed that the application of CNT materials for the precision hybrid passive devices with a metal alloy could result in a better performance reliability with a zero tolerance.
Phase evolution, sintering behavior, microstructure, and microwave dielectric properties of (1-x) mol Ba3V4O13 - (x) mol BaV2O6 system were investigated. The sintered specimens of all compositions consisted of Ba3V4O13 and BaV2O6, and no secondary phase was observed. As x increased, the linear shrinkage decreased to the composition of x=0.5, and then increased again, implying that Ba3V4O13 and BaV2O6 phases interfered mutually with each other during sintering. All compositions showed a dense microstructure with a large grain growth. Cracks were observed in some compositions because of the relatively high sintering temperature of 620~640℃. As x increased, the dielectric constant increased, while the quality factor was maintained from about 50,000 GHz to about 70,000 GHz up to the composition of x=0.9, and then decreased to 20,987~27,180 GHz at the composition of x=1.0. As x increased, the temperature coefficient of the resonance frequency showed a (+) value from a (-) value. The dielectric constant, the quality factor, and the temperature coefficient of resonant frequency of x=0.7 composition sintered at 640℃ for 4 hours were 10.61, 71,126 GHz, and -4.9 ppm/℃, respectively. This composition showed a good chemical compatibility with Al powder, indicating that the Ba3V4O13-BaV2O6 ceramics are a candidate material for ULTCC (Ultra-Low Temperature Co-fired Ceramics) applications.
CNT fiber has been in the spotlight as a conductor, but the conductivity of CNT fibers do not match that of CNT. This study reveals that the conductivity of CNT fiber can be improved by depositing Al/Cu through vacuum evaporation. Cu is commonly used for deposition on CNT fibers. But low bonding strength of the interface between CNT and Cu could be a disadvantage. To overcome this, Al was deposited on the CNT fiber for forming aluminum carbide islands to increase the interfacial bonding strength. The conductivity characteristics were improved as the deposition time increased. The resistance was measured as a function of temperature, demonstrating that the temperature coefficient of resistance (TCR) is improved to be 241 ppm/℃ in comparison with that of as-received CNT fibers at -1,251 ppm/℃, when the CNT fibers are deposited with Al and Cu, respectively, for 90s and for 540s.
In this study, we fabricated plate-type shunt resistors with thermal stability by parallelly connecting metal alloy plates with positive temperature coefficient of resistance (TCR) and carbon nanotube (CNT) plates with negative TCR. The metal alloy plates, which were prepared by alloying Cu and Mn with a composition of 91 wt% of Cu and 9 wt% of Mn, showed around 800 ppm/℃ of TCR, and the CNT plates prepared from the CNT solution by using the vacuum filtration method showed around -800 ppm/℃ of TCR. The shunt resistor that was fabricated by stacking metal alloy plates and CNT plates in this work showed about 46.93 ppm/℃ of TCR. Therefore, we conclude that a shunt resistor with low TCR can be realized by simply adjusting the TCR of the metal alloy only, because the TCR of the CNT plate has an identical value.
Lithium-ion batteries used for IT, automobiles, and industrial energy-storage devices have battery management systems (BMS) to protect the battery from abnormal voltage, current, and temperature environments, as well as safety devices like, current interruption device (CID), fuse, and vent to obtain positive temperature coefficient (PTC). Nonetheless, there are harmful to human health and property and damage the brand image of the manufacturer because of smoke, fire, and explosion of lithium battery packs. In this paper, we propose a systematic protection algorithm combining battery temperature, over-current, and interconnection between protection elements to prevent copper deposition, internal short circuit, and separator shrinkage due to frequent and instantaneous over-current discharges. The parameters of the proposed algorithm are suggested to utilize the experimental data in consideration of battery pack operating conditions and malicious conditions.
The phase evolution, microstructure, and microwave dielectric properties of Ba(Mg0.5-2xY2xW0.5-xTix)O3 (x＝ 0.005~0.05) ceramics sintered at 1,700℃ for 1h were investigated. All compositions exhibited a 1:1 ordered cubic perovskite structure. The field emission scanning electron microscopy image revealed a dense microstructure in all the compositions. As the value of x increased, the lattice parameter, dielectric constant, and quality factor increased. The temperature coefficient of resonant frequency changed from -19.6 ppm/℃ to -5.9 ppm/℃ with increasing x value. The dielectric constant, quality factor, and temperature coefficient of resonant frequency of Ba(Mg0.40Y0.10W0.45Ti0.05)O3 were 21.7, 132,685 GHz, and -5.9 ppm/℃, respectively.
In this paper, we discuss the fabrication of metal alloy resistors. We connected them in parallel to estimate their resistance and temperature coefficient of resistance (TCR). The fabricated resistors have different resistances, 5 and 10 Ω and different TCRs, 50 and 200 ppm/℃. Each resistor was confirmed to have the correct atomic composition through the use of energy dispersive X-ray (EDX). The resistors’ electrical properties were confirmed by measuring resistance and TCR. The resistance and TCR of the resistors connected in parallel were estimated through the increase in resistance due to the increase in temperature, and were compared with the measured values. We are confident that this TCR estimation technique, which uses the increase in resistance due to temperature, will be very useful in designing and fabricating resistors with low and stable TCR.
In this study, we designed the temperature coefficient of resistance (TCR) and heat radiation properties of shunt fixed resistors by adjusting the atomic composition of a metal alloy resistor, and fabricated a resistor that satisfied the designed properties. Resistors with similar atomic composition of copper and nickel showed low TCR and excellent shunt fixed resistor properties such as short-time overload, rated load, humidity load, and high temperature load. Finally, we expect that improved sensor accuracy will be obtained in current-distribution-type shunt fixed resistor for IoT sensors by designing the atomic composition of the metal alloy resistor proposed in this work.
In this paper, we investigated the effect of Co content on the microstructural and electrical properties of Ni0.79Mn2.21-xCoxO4 (x=0 to 0.25) specimens. Solid-state reaction was used to prepare the bulk specimens. XRD (X-ray diffraction) patterns showed that all compositions had a cubic spinel phase. As a result of the microstructural properties, FE-SEM(field-emission scanning electron microscopy) analysis showed a dense structure, and the mean grain size increased from 5.24 μm to 7.33 μm with an increase of Co content from x=0 to 0.25. All specimens exhibited the typical NTC thermistor characteristics as the electrical resistance exponentially decreased with increasing temperature. The resistivity and the B-value of Ni0.79Mn1.96Co0.25O4 were 2959 Ω·cm and 3719, respectively.
In this paper, we prepared a metal alloy resistor with stable thermal electro motive force (thermal EMF) as well as a low temperature coefficient of resistance (TCR) by adjusting the manganese proportion from 3 to 12 wt% in the Cu-Mn-Ni alloy. Composition of the fabricated metal alloy was investigated using energy dispersive X-ray (EDX) analysis. The TCR of each sample was measured as 44.56, 40.54, 35.60, and 31.56 ppm for Cu-3Mn-2Ni, Cu-5Mn-2Ni, Cu-10Mn-2Ni, and Cu-12Mn-2Ni, respectively. All the resistor samples were available for the F grade (±1% of the allowable error of resistance) high-precision resistor. All the samples satisfied the baseline of high thermal EMF (under 3 mV at 60℃); however, Cu-3Mn-2Ni and Cu-5Mn-2Ni satisfied the baseline of low thermal EMF (under 0.3 mV at 25℃). We were thus able to design and fabricate the metal alloy resistor of Cu-3Mn-2Ni and Cu-5Mn-2Ni to have low TCR and stable thermal EMF at the same time.
Effects of pH value and deposition time on the electrical properties of (NMC) Ni-Mn-Cu-O and (NMCC) Ni-Mn-Cu-Co-O thin films were investigated. The NMC and NMCC films were prepared by spin spray method. The crystal structure and thickness of the annealed films were changed by the pH value and deposition time, respectively. A single phase of cubic spinel structure was confirmed for the annealed films deposited from solutions with pH 7.6. The resistivity of the annealed films was affected by the crystal structure and microstructure. The TCR (temperature coefficient of resistance) was dependent on the Mn3+/Mn4+. Typically, the resistivity of 70.5 Ω · ㎝ and TCR of -3.56%/K at room temperature were obtained for NMCC films deposited from solutions with pH 7.6 for 5 min, and annealed at 450℃ for 3 h.
In this study, Ni0.79(Mn2.21-χCuχ)O4 (x=0~0.25) specimens were prepared by using a conventional mixed oxide method. All specimens were sintered in air at 1,℃ for 12 h and cooled at a rate of 2℃/min to 800℃, subsequently quenching to room temperature. We investigated the structural and electrical properties of Ni 0.79(Mn2,21-χCuχ)O4 specimens with variation of CuO amount for the application of NTC thermistors. As results of X-ray diffraction patterns, all specimens showed the formation of a complete solid solution with cubic spinel phase. The relationship between ln ρ and the reciprocal of absolute temperature(1/T) for the NTC thermistors was shown linearity, which exhibited the typical NTC thermistor properties. With increasing the amount of CuO, resistivity at room temperature, B-value, and temperature coefficient resistance decreased.
Spinel thin films were prepared by the spin spray technique to develop new thermal imaging materials annealed at low temperature for uncooled microbolometer applications. The spinel thin films were deposited from [(Ni0.30Co0.33Mn0.37)1-xCux]3O4 (0.1≤x≤0.2) solutions and then annealed at 400℃ for 1 h inargon. Effects of Cu content (x) and deposition time on the electrical properties of the annealed films were investigated. With increasing deposition time, the resistivity of the annealed films increased. For the annealed films deposited for 1 min, the resistivity of x=0.15 films was lower than that of x=0.1 films due to the different grain sizes. The high temperature coefficient of resistance (TCR) of the annealed films could be obtained at temperature below 50℃. Typically, the resistivity of 127 Ω·cm and TCR of -5.69%/Kat 30℃ were obtained for x=0.1 films with deposition time of 1 min annealed at 400℃ for 1 h in argon.
[(Co1-xCux)0.2(Ni0.3Mn0.7)0.8]3O4 (0≤x≤1) thin films prepared by metal organic decomposition process were fabricated on SiN/Si substrate for infrared sensor application. Their structural and electrical properties were investigated with variation of Cu dopant. The [(Co1-xCux)0.2(Ni0.3Mn0.7)0.8]3O4 (CCNMO) film annealed at500℃ exhibited a dense microstructure and a homogeneous crystal structure with a cubic spinel phase. Theircrystallinity was further enhanced with increasing doped Cu amount. The 120 nm-thick CCNMO (x=0.6) thin film had a low resistivity of 53 Ω·cm at room temperature while the Co-free film (x=1) showed a significantly decreased resistivity of 5.9 Ω·cm. Furthermore, the negative temperature coefficient of resistance(NTCR) characteristics were lower than -2%/℃ for all the specimens with x≥0.6. These results imply that the CCNMO (x≥0.6) thin films are a good candidate material for infrared sensor application.
Copper manganite thin films were fabricated on SiNx/Si substrate by metal organic decomposition (MOD) process. They were burned-out at 400℃ and annealed at various temperatures (400∼800℃) for 1h in ambient atmosphere. Their micro-structure and negative temperature coefficient of resistance (NTCR) characteristics were analyzed for micro-bolometer application. The copper manganitefilm with a cubic spinel structure was well developed at 500℃ which confirmed by XRD and HRTEM analysis. It showed a low resistivity (47.5 Ω·cm) at room temperature and high NTCR characteristics of-4.12%/℃ and -2.15%/℃ at room temperature and 85℃, implying a good thin film for micro-bolometer application. Furthermore, its crystallinity was enhanced with increasing temperature to 600℃. However, the appearance of secondary phase at temperatures higher than 600℃ lead to deteriorate the NTCR characteristics.
In this study, the effect of Nb2O5 and sintering time on the positive temperature of coefficient of resistivity (PTCR) behavior of lead free Ba0.99(Bi0.5Na0.5)0.01TiO3 (BBNT) ceramics were investigated in order to fabricate a PTC thermistor with high Tc temperature more than 140℃. In particular, BBNT ceramic doped with 0.1mol% Nb2O5 and sintered at 1350℃ for 4 h has significantly increased Curie temperature (Tc) of about 200℃, showed good PTCR behavior of room-temperature resistivity (ρrt) of 40 Ω·㎝, a high ρmax/ρmin ratio of 43.78×103 and a large resistivity temperature factor (α) of 16.1%/℃. With increasing addition of Nb2O5 content, the ρrt decreased to a minimum value of 40 Ω·㎝ at 0.1mol% Nb2O5 and the ρrt increased for x value over 0.1 mol%.
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