In this study, the physical mechanism and diffusion effects in aluminium implanted silicon was investigated. For fabricating power semiconductor devices, an aluminum implantation can be used as an emitter and a long drift region in a power diode, transistor, and thyristor. Thermal treatment with O₂ gas exhibited to a remarkably deeper profile than inert gas with N₂ in the depth of junction structure. The redistribution of aluminum implanted through via thermal annealing exhibited oxidation-enhanced diffusion in comparison with inert gas atmosphere. To investigate doping distribution for implantation and diffusion experiments, spreading resistance and secondary ion mass spectrometer tools were used for the measurements. For the deep-junction structure of these experiments, aluminum implantation and diffusion exhibited a junction depth around 20 μm for the fabrication of power silicon devices.

For the investigation of dopant profiles in implanted Si_1-xGe_x, the implanted B and As profiles are measured using SIMS (secondary ion mass spectrometry). The fundamental ion-solid interactions of implantation in Si_1-xGe_x are discussed and explained using SRIM, UT-marlowe, and T-dyn programs. The annealed simulation profiles are also analyzed and compared with experimental data. In comparison with the SIMS data, the boron simulation results show 8% deviations of R_p and 1.8% deviations of ΔR_p owing to relatively small lattice strain and relaxation on the sample surface. In comparison with the SIMS data, the simulation results show 4.7% deviations of R_p and 8.1% deviations of ΔR_p in the arsenic implanted Si_0.2Ge_0.8 layer and 8.5% deviations of R_p and 38% deviations of ΔR_p in the Si_0.5Ge_0.5 layer. An analytical method for obtaining the dopant profile is proposed and also compared with experimental and simulation data herein. For the high-speed CMOSFET (complementary metal oxide semiconductor field effect transistor) and HBT (heterojunction bipolar transistor), the study of dopant profiles in the Si_1-xGe_x layer becomes more important for accurate device scaling and fabrication technologies.

For integrated complementary metal oxide semiconductor (CMOS) circuits, the lateral spread for two-dimensional (2-D) impurity distributions are very important for the analyzing the devices. The measured two-dimensional SEM data obtained using the chemical etching-method matched very well with the results of the Gauss model for boron implanted samples. But the profiles in boron implanted silicon were deviated from the Gauss model. The profiles in boron implanted silicon were shown a little bit steep profile in the deep region due to backscattering effect on the near surface from the bombardments of light boron ions. From the simulated 3-D data obtained using an analytical model, the 1-D and 2-D data were compared with the experimental data and could be verified the justification from the experimental data. The data of 3-D model were also shown good agreements with the experimental and the simulated data. It can be used in the 3-D chip design and the analysis of microelectro-mecanical system (MEMS) and special devices.

The effect of various post-annealing temperature to sputtered Pb(Zr,Ti)O3 (PZT) thin films was investigated. The crystallization process, surface morphology and the electrical characteristics strongly depends on the rapid thermal annealing (RTA). In radio frequency (RF) sputtering methods, there were many papers mostly forcing on the crystal forming and the surface variations with different elements distribution (Pb, Ti, Zr, O) on the surface of the PZT layer. In this experiment, the post-annealing treatment promoted the Pb volatilization in PZT thin film and affected the Ti diffused throughout the Pt layer into the PZT layer. Second ion mass spectroscopy (SIMS) analysis was employed to show that the Pb element in the PZT layer was decreased at the same time the Ti element mass was slight decreased than Pb with increasing RTA temperature. That result prove the content of Pb affect the PZT thin film property.