This paper deals with the characteristics of partial discharge (PD) for the purpose of a condition based maintenance (CBM) of gas insulated switchgears (GIS) in power equipment. Four types of electrode systems such as a protrusion on enclosure (POE), a particle on spacer (POS), a free particle (FP) and a Floating were designed and fabricated. PD pulses were measured using UHF sensor with a frequency range of 300 MHz∼1.4 GHz and a DAQ with a sampling rate of 250 MS/s. Discharge inception voltage (DIV), discharge extinction voltage (DEV), and phase resolved partial discharge (PRPD) were analyzed depending on electrode systems. The average DIV in the POS was 28.8 kV. It was about 1.7 times higher than that in the FP, which was the lowest value of 17.2 kV. The FP shuffled and jumped at the applied voltage of 23.5 kV. Over 95% of PD pulses in the POE were generated in the negative polarity (181°∼360°) of applied voltage. The results showed the phase (Φ)-magnitude (dBm) of PD pulses by UHF sensor, a cluster was formed separately depending on electrode systems.

Some insulating materials are organized and analyzed with variables to obtain the optimized profile of encapsulated three phase of epoxy barrier which is applied to gas compartment and supporting conductors for high voltage GIS (gas insulated switchgear). The high voltage GIS is used in electrical power system and operating reliability. In this paper, optimization possibility of barrier shape including both electrical insulation performance and mechanical strength, premised on that condition minimizing volume and light weight should be kept for high voltage GIS, could be achieved by analysis simulation. As a result, filling material which is lower permittivity such as SiO2 instead of Al2O3 properly to the epoxy material, can be improved to increase the electrical insulation performance and mechanical strength for an optimized profile barrier of a high voltage GIS.

This paper dealt with the measurement and analysis of partial discharge (PD) under high voltage direct current (HVDC) in SF6 gas. Electrode systems such as a protrusion on conductor (POC), a protrusion on enclosure (POE), a crack on epoxy plate and a free particle (FP) were fabricated to simulate the insulation defects. The analysis system was designed with a Time-Frequency (T-F) map algorithm programed based on Lab VIEW. This can arrange the acquired PD pulses into frequency and time domain. A HVDC power source is composed of a transformer (220 V/50 kV), a diode (100 kV) and a capacitor (50 kV, 0.5 μF). The gap between the electrodes is 3 mm, and the SF6 gas was set at 5 bar. PD pulses were detected by a 50 Ω non-inductive resistor. In the analysis, PD pulses were distributed below 0.5 MHz and 20 ns ∼ 35 ns for the POC, 0.7 MHz ∼ 1.7 MHz, below 0.6 MHz and 10 ns ∼ 40 ns and 60 ns ∼125 ns for the POE, below 0.1 MHz and 135 ns ∼ 215 ns for the crack, and below 1.6 MHz and 250 ns for the FP.

The etching characteristics of ZnO and etch selectivities of ZnO to SiO2 in SF6/Ar plasma were investigated using Inductively-coupled-plasma (ICP). The maximum etch rates of ZnO were 6.5 nm/min at SF6(50%)/Ar(50%), Source power (700 W), Bias power (250 W), Working pressure(8 mTorr). The etch rate of ZnO showed a non-monotonic behavior with increasing from 0% to 50% Ar fraction in SF6/ Ar plasma. The plasma diagnostic were characterized using Optical Emission Spectroscopy (OES) analysis measurements.