Current limiting diode (CLD) was fabricated using junction field effect transistor (JFET) structured two small cells and eight large cells. Two small cells and eight large cells were connected in parallel and the obtained constant current was 110 mA. The application of CLD in each of the parallel circuits on chip on board (COB) type LED lighting source, could significantly reduce the current deviation within the parallel circuits. The applications of CLD on AC power small lighting source, battery power low voltage parallel lighting source and AC flat lighting source were investigated.

This paper presents the design and reliability evaluation of metallized film capacitor for power electronics application. The rated voltage of development capacitor is DC 3300[V], the capacitance is 5 μF and the ripple current capability is 130 A(rms). Film metallization and patterns are an important design factor that has been development enhance the electric and reliability properties of film capacitor for power electro nics. In term of capacitor construction and metallized pattern is one of the parameters that can be modified to further improve the rating in the terms of maximum ripple current and lifetime. This capacitor can be used as snubber capacitor application such as power train invertor system.