Liquid-based Triboelectric nanogenerator (L-TENG) is one of the alternatives to solid-based Triboelectric nanogenerator (S-TENG) because of the absence of surface damage which can decrease the durability of the generator. However, the L-TENG also has an obvious drawback of significantly lower output than that of S-TENG. This article produces water-sloshing-based electricity generating device (W-ED) with a new design of L-TENG that improves electrical output in portable form. The dual-electrode system, consisting of closed-loop circuit and inner electrode which enables water to contact directly in the bottle, can generate the open-circuit voltage and the short-circuit current of up to 348 V and 5.1 mA, respectively. By investigating the motion of water for each frequency, we propose that W-ED is suitable device for a variety of human motions. We expect that W-ED can be applied in small electrical devices or sensors in daily-use items.

Ultrasound imaging by using piezoelectric materials, such as lead zirconium titanate (PZT) has been oneof the most preferred modes of imaging in the medical field due to its simple, low cost and non-ionizing radiation in comparison to other imaging techniques. Recently, the market demand for portable ultrasound is becoming larger with applications in developing countries, disaster area, military, and emergency purposes. However, most of ultrasound probes used is bulky and high power consumable, so unsuitable for such applications. In this study, the 3 layered ceramic specimen consisted of 128 pitches of 420 μm in width and 450 μm in thickness were prepared by using the Ti-rich PZT compositions co-fired at 1,050℃. Their electrical and ultrasound pulse-echo properties were investigated and compared to the single layer specimen. The 3 layered ultrasound probe showed 1.584 V of Vp-p, which is 3.2 times higher than single layered one, implying that it would allow effectively such a portable ultrasound probe system. The result were discussed in terms of higher capacitance, lower impedance and higher dielectric coefficient of the 3 layered ultrasound probe.

The conduction behavior and electron concentration change in a-IGZO thin-films according to the RTA (rapid thermal annealing) were studied. The electrical characteristics of TFTs (thin-film-transistors) annealed by different temperatures were measured. The sheet resistance, electron concentration, and oxygen vacancy of a-IGZO film were measured by the four-point-probe-measurement, hall-effect-measurement, and XPS analysis. The RTA process increased the driving current of IGZO TFTs but the VTH shifted to the negative direction at the same time. When the RTA temperature is higher than 250℃, the leakage current at off-state increased significantly. This is attributed to the increase of oxygen vacancy resulting in the increase of electron concentration. We demonstrate that the RTA is a promising process to adjust the VTH of TFT because the RTA process can easily modify the electron concentration and control the conductivity of IGZO film with short process time.

The Sr0.7Bi2.3Nb2O9(SBNO) thin films were deposited on Si substrate by RF magnetron sputtering method at 300℃ of substrate temperature. And the SBNO thin films were annealed at 650～800℃ using RTA (rapid thermal annealing). The grain of SBNO thin films were increased with the increase of annealing temperature. The dielectric constant (100) of SBNO thin film was obtained by RTA above 750℃. The voltage dependence of dielectric loss showed a value within 0.03 in voltage ranges of -5～＋5 V. Also, the dielectric constant characteristics showed a stable value with the increase of frequency.

Even though nano-scale materials were very advantageous for various applications, there are still problems to be solved such as the stabilization of surface state and realization of low contact resistances between a semiconducting nanowire and electrodes in nano-electronics. It is well known that the effects of contacts barrier between nano-channel and metal electrodes were dominant in carrier transportation in individual nano-electronics. In this report, it was investigated the electrical properties of GaN nanorod devices after chemical etching and rapid thermal annealing for making good contacts. After KOH wet-etching of the contact area the devices showed better electrical performance compared with non-treated GaN individual devices but still didn`t have linear voltage-current characteristics. The shape of voltage-current properties of GaN devices were improved remarkably after rapid thermal annealing as showing Ohmic behaviors with further bigger conductivities. Even though chemical etching of the nanorod surfaces could cause scattering of carriers, in here it was shown that the most important and dominant factor in carrier transport of nano-electronics was realization of low contact barrier between nano-channel and metal electrodes surely.