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RPALD
WHERE t1.sid in(parameter_dbtbl_keyword '%RPALD%') and t1.xml_status <> 99
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"RPALD"
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Keywords
Aluminum oxide (2)
GaN (2)
MIS (2)
RPALD (2)
Interface trap density (1)
Publication year
2009 (2)
Authors
Hyun Jun Kim (2)
Ka Lam Kim (2)
Kwang Ho Kim (2)
Woo Seok Lee (2)
No Won Kwak (1)
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Keywords
Aluminum oxide (2)
GaN (2)
MIS (2)
RPALD (2)
Interface trap density (1)
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authors
Hyun Jun Kim (2)
Ka Lam Kim (2)
Kwang Ho Kim (2)
Woo Seok Lee (2)
No Won Kwak (1)
No-Won Kwak (1)
Hyeong Seon Yun (1)
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2009 (2)
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"RPALD"
Change in Electrical Properties of Al2O3/Gan MIS Structures according to the Thickness of Al2O3 Thin Film and Annealing Temperature
No-Won Kwak, Woo Seok Lee, Ka Lam Kim, Hyun Jun Kim, Kwang Ho Kim
J Korean Inst Electr Electron Mater Eng
2009;22(6):470-475.
Published online June 1, 2009
DOI:
https://doi.org/10.4313/JKEM.2009.22.6.470
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Fabrication and Electrical Properties of Al2O3/GaN MIS Structures using Remote Plasma Atomic Layer Deposition
Hyeong Seon Yun, Hyun Jun Kim, Woo Seok Lee, No Won Kwak, Ka Lam Kim, Kwang Ho Kim
J Korean Inst Electr Electron Mater Eng
2009;22(4):350-354.
Published online April 1, 2009
DOI:
https://doi.org/10.4313/JKEM.2009.22.4.350
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