Mo doped carbon (C:Mo) thin films were fabricated with various Mo target power densities by unbalanced magnetron sputtering (UBM). The effects of target power density on the surface, structural, and electrical properties of C:Mo films were investigated. UBM sputtered C:Mo thin films exhibited smooth and uniform surfaces. However, the rms surface roughness of C:Mo films were increased with the increase of target power density. Also, the resistivity value of C:Mo film as electrical properties was decreased with the increase of target power density. From the performance of organic thin filml transistor using conductive C:Mo gate electrode, the carrier mobility, threshold voltage, and on/off ratio of drain current (Ion/Ioff) showed 0.16 cm²/V·s, -6.0 V, and 7.7×10⁴, respectively.

Titanium oxide (TiO2) thin films were synthesized on polymer insulator and Si substrates by atomic layer deposition (ALD) method. The surface and electrical properties of TiO2 films synthesized at various ALD cycle numbers were investigated. The synthesized TiO2 films exhibited higher contact angle and smooth surface. The contact angle of TiO2 films was increased with the increase of ALD-cycle number. Also, the rms surface roughness of films was slightly rough with the increase of ALD-cycle number. The leakage current on TiO2 film surface synthesized at various conditions were uniformed, and the values were decreased with the increase of ALD-cycle number. In the results, the performance of TiO2 films for self-cleaning critically depended on a number of ALD-cycle.

Titanium oxide (TiO2) thin films were fabricated by unbalanced magnetron (UBM) sputtering. The fabricated TiO2 films were treated by oxygen plasma under various RF powers. We investigated the characteristics of oxygen plasma treatment on the surface, structural, and physical properties of TiO2 films prepared at various plasma treatment RF powers. UBM sputtered TiO2 films exhibited higher contact angle value, smooth surface, and amorphous structure. However, the rms surface roughness TiO2 films were rough, and the contact angle value was decreased with the increase of the plasma treatment RF power Also, the hardness value of TiO2 film as physical properties was slightly increased with the increase of the plasma treatment RF power. In the results, the performance of TiO2 films for self cleaning critically depended on the with the plasma treatment RF power.

TiC thin films were deposited on Si wafer by unbalanced magnetron sputtering (UBMS) system with two targets of graphite and titanium. During the TiC sputtering, the RF power was varied from 100 W to 175 W and the physical and electrical properties of TiC films were investigated. The hardness and rms surface roughness of TiC films were improved with increasing RF power and the maximum hardness about 24 GPa and the minimum rms surface roughness about 1.2 nm were obtained. The resistivity of TiC films was decreased with increasing RF power. Consequently, the physical and electrical properties of TiC film wewe improved with increasing RF power.