An excellent hydrophobic surface has a high contact angle over 147 degree and the contact anglehysteresis below 50 was produced by using roughness combined with hydrophobic PTFE coatings, which were alsoconfirmed to exhibit an extreme adhesion to glass substrate. To form the rough surface, the glass was etched byAr-plasma. A very thin PTFE film was coated on the plasma etched glass surface. Roughness factors before orafter PTFE coating on the plasma etched glass surface, based on Wensel``s model were calculated, which agreeswell with the dependence of the contact angle on the roughness factor is predicted by Wensel``s model. The PTFEfilms deposited on glass by using a conventional rf-magnetron sputtering. The glass substrates were etchedAr-plasma prior to the deposition of PTFE. Their hydrophobicities are investigated for application as a anti-foulingcoating layer on the screen of displays. It is found that the hydrophobicity of PTFE films mainly depends on thesputtering conditions, such as rf-power, Ar gas content introduced during deposition. These conditions are closelyrelated to the deposition rate or thickness of PTFE film. Thus, it is also found that the deposition rate or the filmthickness affects sensitively the geometrical morphology formed on surface of the rf-sputtered PTFE films. Inparticular, 1,950-nm-thick PTFE films deposited for 30 minute by rf-power 50 watt under Ar gas content of 20sccm shows a very excellent optical transmittance and a good anti-fouling property and a good durability.

The Gallium-doped ZnO(GZO) film deposited at a temperature of 200℃ and a pressure of 10 mtorr has an optical transmittance of 89.0% and a resistivity of 2.0 mΩ·cm because of its high crystallinity. Effect of Al2O3 oxide buffer layers on the optical and electrical properties of sputtered ZnO films were intensively investigated for developing the electrodes of opto-electronic devices which demanded high optical transmittance and low resistivity. The use of Al2O3 buffer layer could increase optical transmittance of GZO film to 90.7% at a wavelength of 550 nm by controlling optical spectrum. Resistivity of deposited GZO films were much dependent on the deposition condition of O2/(Ar+O2) flow rate ratio during the buffer layer deposition. It is considered that the Al2O3 buffer layer could increase the carrier concentration of the GZO films by doping effect of diffused Al atoms through the rough interface.

Super-hydrophobic properties have been achieved on the rf-sputtered polytetrafluoroethylene(PTFE) films deposited on etched aluminum surfaces. The microstructural evolution created after etching has been investigated by FESEM. The water contact angle over 160o can be achieved on the rf-sputtered ultra-tihn PTFE film less than 10 nm coated on aluminum surface etched with 7 wt.%, 12.5 wt.%, and 15 wt.% HCl concentration for 12 min. XPS analysis have revealed the presence of a large quantity of -CF3 and -CF2 groups in the rf-sputtered PTFE films that effectively can reduce the surface energy of etched aluminum. The presence of patterned morphology along with the low surface energy at the rf-sputtered PTFE coating makes the aluminum surface with high super-hydrophobic property.

In this study, we investigated the optical, electrical, and structural properties of the IGZO(In2O3:Ga2O3:ZnO=1:9:90 wt.%) thin films prepared by RF-magnetron sputtering system under various substrate temperatures. All of the IGZO thin films shows an average transmittance of over the 80% in visible range. Most of all, deposited IGZO thin film at 100 ˚C substrate temperature have ZnO (002) of main growth peak and 17.02 nm of increased grains. And also IGZO thin film have low resistivity(1.35×10(-3) Ω·cm), high carrier concentration(6.62X10(20) cm-3) and mobility(80.1 cm2/Vsec). IGZO thin film have 2.08 mV at surface potential of electric force microscopy(EFM). We suggest that pre-annealing at 100 ˚C can be applied for improving optical, electrical and structural properties.

In this investigation, the effects of N(2)/(Ar+N(2)) gas partial pressure on the structural, electrical, and thermal properties of AlN dielectric layers prepared on aluminum substrates using RF-magnetron sputtering method were analyzed. Among the films, the AlN dielectric film deposited under N(2)/(Ar+N(2)) gas partial pressure of 75% exhibit the highest AlN (002) preferred orientation, which was grain size of about 15.3(2) nm and very dense structure. We suggest the possibilities of it`s application as a dielectric layer for metal PCB because the AlN films prepared at optimized gas partial pressure can improving the insulating property, the thermal conductivity, and thermal diffusivity of the films.

Citations

• Characterization of AlN Thin Films Grown by Pulsed Laser Deposition on Sapphire Substrate
  Eun-Hee Jeong, Jun-Ki Chung, Rae-Young Jung, Sung-Jin Kim, Sang-Yeup Park
  Journal of the Korean Ceramic Society.2013; 50(6): 551.     CrossRef