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"Process parameter"

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"Process parameter"

Optimization of High-Precision Nozzle-Printing Processes and Process Parameters Analysis
Chanyeong Jung, Jeonggyo Kwon, Sunyoung Sohn
J Electr Electron Mater 2025;38(6):617-628.   Published online November 1, 2025
DOI: https://doi.org/10.4313/JEEM.2025.38.6.3
Nozzle-printing dispensers, which utilize air pulsation as a dispensing principle, operate by transmitting air pressure to the liquid to push a constant amount of liquid. Nozzle printers have the advantage of precisely controlling energy based on liquid properties, such as viscosity and surface tension, enabling the precise application of liquid at specific locations and quantities. This study introduces a printing process sequence using a nozzle printer equipped with a high-resolution vision alignment system. It compares printing patterns according to key process variables (jet pressure, tip height, and travel speed) that affect coating quality. Experimental results showed that a coating standard deviation of 2.14 μm was achieved at a moving speed of 20 mm/s and a nozzle height of 0.2 mm, resulting in the most stable and uniform coating quality. Through these experiments, optimal conditions were identified based on factors such as coating width, uniformity, and presence of discontinuity, and the effects of these conditions on the precision manufacturing process are discussed.
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Regular Paper Optimal Process Design of Super Junction MOSFET
Ey Goo Kang
J Electr Electron Mater 2014;27(8):501-504.   Published online August 1, 2014
This paper was developed and described core-process to implement low on resistance whichwas the most important characteristics of SJ (super junction) MOSFET. Firstly, using process-simulation,SJ MOSFET optimal structure was set and developed its process flow chart by repeated simulation. Following process flow, gate level process was performed. And source and drain level process wassimilar to genral planar MOSFET, so the process was the same as the general planar MOSFET. Andthen to develop deep trench process which was main process of the whole process, after finishing photomask process, we developed deep trench process. We expected that developed process was necessary todevelop SJ MOSFET for automobile semiconductor.
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