Journal of Electrical and Electronic Materials

Optimization of 4H-SiC DMOSFETs by Adjustment of the Dimensions and Level of the p-base Region: Jung Joon Ahn, Wook Bahng, Sang Chul Kim, Nam Kyun Kim, Hong Bae Jung, Sang Mo Koo; J Korean Inst Electr Electron Mater Eng 2010;23(7):513-516. Published online July 1, 2010; DOI: https://doi.org/10.4313/JKEM.2010.23.7.513

Electrical Characteristics of the Dual Gate Emitter Switched Thyristor: J Korean Inst Electr Electron Mater Eng 2005;18(5):401-406. Published online May 1, 2005; DOI: https://doi.org/10.4313/JKEM.2005.18.5.401

Characteristics of Latch-up Current of the Dual Gate Emitter Switched Thyristor: J Korean Inst Electr Electron Mater Eng 2004;17(8):799-805. Published online August 1, 2004; DOI: https://doi.org/10.4313/JKEM.2004.17.8.799

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