IZO transistors with Al₂O₃ as gate dielectrics have been investigated. To improve permittivity in an ambient dielectric layer, we grew Al₂O₃ by atomic layer deposition directly onto the substrates. Then, we prepared IZO semiconductor solutions with 0.1 M indium nitrate hydrate [In(NO₃)₃·xH₂O] and 0.1 M zinc acetate dehydrate [Zn(CH₃COO)₂·2H₂O] as precursor solutions; the IZO solution made with a molar ratio of 7:3 was then prepared. It has been found that these oxide transistors exhibit low operating voltage, good turn-on voltage, and an average field-effect mobility of 0.90 ㎠/Vs in ambient conditions. Studies of low-voltage driving of IZO transistors with atomic layer-deposited high-k Al₂O₃ as gate dielectric provide data of relevance for the potential use of these materials and this technology in transparent display devices and displays.

In this paper, we have compared amorphous InGaZnO (a-IGZO) thin-film transistor (TFT) with the nano-crystalline embedded-IGZO (Nc-embedded-IGZO) TFT fabricated by solid-phase crystallization (SPC) technique. The field effect mobility (μFE) of Nc-embedded-IGZO TFT was 2.37 cm2/Vs and the subthreshold slope (S-factor) was 0.83 V/decade, which showed lower performance than those of a-IGZO TFT (μFE of a-IGZO was 9.67 cm2/Vs and S-factor was 0.19 V/decade). This results originated from generation of oxygen vacancies in oxide semiconductor and interface between gate insulator and semiconductor due to high temperature annealing process. However, the threshold voltage shift (△V(TH)) of Nc-embedded-IGZO TFT was 0.5 V, which showed 1 V less shift than that of a-IGZO TFT under constant current stress during 10(5) s. This was because there were additionally less increase of interface trap charges in Nc-embedded-IGZO TFT than a-IGZO TFT.