IZO transistors with Al2O3 as gate dielectrics have been investigated. To improve permittivity in an ambient dielectric layer, we grew Al2O3 by atomic layer deposition directly onto the substrates. Then, we prepared IZO semiconductor solutions with 0.1 M indium nitrate hydrate [In(NO3)3·xH2O] and 0.1 M zinc acetate dehydrate [Zn(CH3COO)2·2H2O] as precursor solutions; the IZO solution made with a molar ratio of 7:3 was then prepared. It has been found that these oxide transistors exhibit low operating voltage, good turn-on voltage, and an average field-effect mobility of 0.90 ㎠/Vs in ambient conditions. Studies of low-voltage driving of IZO transistors with atomic layer-deposited high-k Al2O3 as gate dielectric provide data of relevance for the potential use of these materials and this technology in transparent display devices and displays.
