For enhancing the flame-retardant properties of wallpapers, we developed an organic-inorganic hybrid solution with ZrSiO4 as a functional ceramic powder, coated on non-woven fabric using dip coating, spray coating, and slot-die coating methods. Their flame retardant properties were characterized by a 45° combustion tester, which is manufactured according to the flame-retardant performance standard (KOFEIS 1001 and KS F 2819). In organic-inorganic hybrid solution, with increasing the concentration of acid-catalyst (acetic acid), the precipitation of ZrSiO₄ powders increased, and the flame retardant properties decreased. The highest flame retardant result was obtained for the solution adding 5 wt% acetic acid. The optimization of the coating method and coating number resulted in the most excellent flame-retardant properties being obtained for the non-woven fabric coated for 5 or 7 times by dip coating method, and their flame-retardant properties corresponded to class 2 flame-retardant performance of wallpapers.

In this study, we developed the solution-processed PMMA-HfOx hybrid ReRAM devices to overcome the respective drawbacks of organic and inorganic materials. The performances of PMMA-HfOx hybrid ReRAM were compared to those of PMMA- and HfOx-based ReRAMs. Bipolar resistive switching behavior was observed from these ReRAMs. The PMMA-HfOx hybrid ReRAMs showed a larger operation voltage margin and memory window than PMMA-based and HfOx-based ReRAMs. The reliability and electrical instability of ReRAMs were remarkably improved by blending the HfOx into PMMA. An Ohmic conduction path was commonly generated in the LRS (low resistance state). In HRS (high resistance state), the PMMA-based ReRAM showed SCLC (space charge limited conduction). the PMMA-HfOx hybrid ReRAM and HfOx-based ReRAM revealed the Pool-Frenkel conduction. As aresult of flexibility test, serious defects were generated in HfOx film deposited on PI (polyimide) substrate. On the other hand, the PMMA and PMMA-HfOx films showed an excellent flexibility without defect generation.