In this paper, matching characteristic of MIM (metal-insulator-metal) capacitor with Al2O3/HfO2/Al2O3 (AHA) structure is analyzed. The floating gate capacitance measurement technique (FGMT) was used for analysis of matching characteristic of the MIM capacitors in depth. It was shown that matching coefficient of AHA MIM capacitor is 0.331%㎛ which is appropriate for application to analog/RF integrated circuits. It was also shown that the matching coefficient has a more strong dependence on the width than length of MIM capacitor.