In this study, Mg_xZn_1-xO thin films, which can be applied not only to active layers of light-emitting devices (LEDs), such as UV-LEDs, but also to solar cells, high mobility field-effect transistors, and power semiconductor devices, are fabricated using the sol-gel method. ZnO and Mg_0.3Zn_0.7O solution synthesized by the sol-gel method and the thin film were grown by spin coating on a Si (100) substrate and sapphire substrate. The solutions are synthesized by dissolving precursor materials in 2-methoxyethanol (2-ME) solvent, and then monoethanolamine (MEA) was added to the mixed solution as a sol stabilizer. Zinc acetate dihydrate is used as a ZnO precursor, while Mg nitrate hexahydrate and Mg acetate tetrahydrate are used as an MgO precursor. Then, the optical and structural characteristics of the fabricated thin films are compared. The molar concentration of the Zn precursor in the solvent is fixed at 0.3 M, and the amount of the Mg precursor is 30% of Mg²⁺/Zn²⁺. The optical characteristics are measured using an UV-vis spectrophotometer, and the transmittance of each wavelength is measured. Structural characteristics are measured using X-ray diffraction (XRD) and transmission electron microscopy (TEM). Composition analyses are performed using energy dispersive X-ray spectroscopy (EDS). The Mg_0.3Zn_0.7O thin film was well formed at the ratio of the Mg precursor added regardless of the type of Mg precursor, and the c-axis of the thin film was decreased, while the band gap was increased to 3.56 eV.

Mullite (3Al₂O₃·2SiO₂) has emerged as a promising candidate for high-temperature structural materials due to its erosion resistance, chemical and thermal stabilities, relatively low thermal expansion coefficient, excellent thermal shock and creep resistances, and low dielectric constant. However, since the pure mullite sintering temperature is as high as 1,600~1,700℃, there is an increasing need for a sintering additive capable of improving the strength characteristics while lowering the sintering temperature. Herein we have tried to obtain the optimal sintering additive composition by adding MgO, Cr₂O₃, and Y₂O₃ to mullite, followed by sintering at 1,325~1,550℃ for 2 h. With additives of 2 wt% of MgO, 2 wt% of Cr₂O₃, 4 wt% of Y₂O₃, A density of 3.23 g/cm³ was obtained for the sintered body at 1,350℃ upon using 2 wt% MgO, 2 wt% Cr₂O₃, and 4 wt% Y₂O₃ as additives. The three-point flexural strength of that was 275 MPa and the coefficient of thermal expansion (CTE) was 4.15 ppm/℃.

Sintering, microstructure, thermal conductivity and microwave dielectric properties of xLiF-(1-x)MgO ceramics (x=0.03-0.10 mol) were investigated. The high density was obtained in the specimens of x≥0.06, i.e., 0.04 LiF-0.96 MgO in mol, whereas the amount of 0.03 mol LiF was insufficient to densify. From the result that the contact flattening in the sintered specimen was observed, the densification occurred through the liquid-phase sintering. The specimen of x=0.06 showed the highest room-temperature thermal conductivity. Relative density, thermal conductivity, dielectric constant, and quality factor (Q x f) of the specimen for x=0.06 sintered at 900°C for 4 h were 97.8%, 39.2 Wm-1K-1, 9.45, and 14,671 GHz, respectively.

This research shows the electrical characteristic using excellent epoxy nano-composite of MgO 5.0 wt% and SiO2 0.4 wt% in mechanical strength test depending on nano-additive. First of all, volume resistance depending on nano-additive and temperature using high resistance meter (HP. 4329A) by increasing 10, 100, 1,000 V of applying voltage was measured. Moreover, temperature range of 25~120℃ with virgin sample was tested using TO-9B oven by Ando Company. The result showed that virgin and the samples added with MgO and SiO2 had similar value of volume resistance in low temperature and low electric field region and reduced with slow slope. The nano-composite`s volume resistance of sample added with MgO and SiO2 had higher value than virgin sample`s volume resistance in high temperature region more than 80℃. Moreover, the slope has steeply reduced. The volume resistance of sample added with MgO 5.0 wt% was 8.38×10(13) Ω·cm and it was 6.8 times more than virgin sample in high temperature at 120℃. The insulation characteristics were constant although filler has changed in low temperature region. But, in high temperature region, the value of volume resistance of sample with MgO 5.0 wt% was 7.6 times more than the virgin sample`s volume resistance.