In this study, we systematically investigated the effects of thermal atomic layer deposition (ALD) conditions on the electrical characteristics of conductive-filament-based volatile threshold switching memristors with a Pt/Al₂O₃/Ag structure. Although volatile threshold switching memristors have attracted significant attention for neuromorphic computing applications such as spiking neural networks, the impact of dielectric deposition conditions on their switching behavior remains relatively unexplored. The number of ALD cycles was varied from 40 to 200, and the deposition temperature was varied from 50 to 250°C to evaluate their effects on threshold voltage (Vth), off-state resistance (Roff), and device yield. Devices fabricated using 75–150 ALD cycles showed clear volatile threshold switching behavior with relatively high device yield, whereas excessively low or high cycle numbers resulted in short-type and open-type failures, respectively. In addition, Vth and Roff tended to increase at higher deposition temperatures, while the device yield significantly degraded above 150°C. These results indicate that the number of ALD cycles and the deposition temperature define a critical process window for achieving volatile threshold switching while suppressing both short-type and open-type failures. This study provides practical guidelines for optimizing dielectric ALD conditions in conductive-filament-based volatile threshold switching memristors for future neuromorphic hardware applications.
Electrochemical water splitting has emerged as a pivotal technology for green hydrogen production, offering a viable pathway toward a sustainable energy future. Among various electrolysis systems, Anion exchange membrane water electrolysis is particularly noteworthy as a cost-effective solution capable of operating under the fluctuating power inputs typical of renewable energy sources. However, the overall efficiency of water splitting is fundamentally limited by the oxygen evolution reaction, which exhibits sluggish kinetics compared to the hydrogen evolution reaction. While IrO2 and RuO2 serve as current benchmarks, their scarcity and high cost necessitate the development of earth-abundant alternatives. This review provides a comprehensive overview of fundamental OER mechanisms including the adsorbate evolution mechanism, lattice oxygen mechanism, and oxide path mechanism while highlighting how new pathways can circumvent traditional scaling relations. We discuss recent advancements in transition metal-based electrocatalysts, encompassing oxides, hydroxides, chalcogenides, phosphides, nitrides, and carbides, with a focus on innovative design strategies such as defect engineering, heteroatom doping, and heterostructure construction. This paper concludes by addressing current challenges and offering perspectives on future directions for the development of highly efficient and economically viable oxygen evolution electrocatalysts for large-scale applications.
Flexible and wearable electronics, which require stable operation under mechanical deformation, are increasingly utilizing Eutectic Gallium-Indium (EGaIn) for their conductive components. This study presents a systematic approach to fabricating highly reliable, deformable electrodes via a direct-ink-writing (DIW) 3D printing process using EGaIn as the functional ink. We conducted a thorough optimization of key printing parameters, specifically the extrusion pressure and printing speed, to achieve stable and uniform conductive lines. Through this optimization, we successfully established an optimal process window, achieving a stable line width of approximately 130 μm at an extrusion pressure of 300 kPa and a printing speed of 16 mm/s. The fabricated flexible electrodes exhibited exceptional electromechanical stability, maintaining negligible resistance change (< 0.82%) both under severe bending (3 mm radius) and after 100 repetitive bending cycles. This work demonstrates that the 3D printing of EGaIn is a viable and effective method for creating robust, high-performance electrodes for the next generation of deformable and wearable electronic devices.
In parallel with the efforts to improve the device performance in modern integrated circuits, it is necessary to downscale their core components, field-effect transistors (FETs), generally gauged by their physical gate length. Upon such device scaling, the emergence of the short-channel effect impedes further scaling into the nanometer scale in the silicon VLSI (Very-Large-Scale-Integration) system. To address this issue, two-dimensional (2D) semiconductors, leveraging their atomically thin thickness and dangling-bond-free characteristics, are being highlighted as a material solution for future scaling technology without severe mobility degradation. Despite the expected ideal physical properties, 2D semiconductors have yet to realize their full potential owing to the limited development of integration technology. In this context, we survey and review the tailored van der Waals integration technologies for 2D FETs. In particular, we provide an in-depth study of both van der Waals integrated contact and dielectric methods along with an explanation of customized materials. In essence, this van der Waals integrationcentered approach will be a core strategy to implement the high-performance 2D transistors that meet the demand of FET miniaturization.
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Single-Molecule Manipulation Techniques Based on Mechanical, Electrical, and Structural Control Jeong Hun Shin, Tae Won Nam Journal of Electrical and Electronic Materials.2026; 39(3): 247. CrossRef
Post-metallization annealing (PMA) has been employed in silicon-based CMOS fabrication to enhance MOSFET reliability and performance. However, although deuterium annealing can reduce interface traps between the Si and SiO₂ gate dielectric, it remains insufficient to fully passivate these traps. In this context, a multiple PMA process, including additional hydrogen annealing, is proposed to further reduce dangling bonds. Silicon-based MOSFETs are fabricated to verify the proposed annealing process architecture. Electrical characterization of the threshold voltage (VTH), subthreshold swing (SS), on-state current (ION), and carrier mobility (μn) is conducted to investigate the impact of the multiple PMA. This study provides a guideline for PMA in MOSFET fabrication, with improvements in both performance and reliability.
Next-generation wide-bandgap semiconductors such as SiC, GaN, and Ga2O3 are being considered as potential replacements for current silicon-based power devices due to their high mobility, larger size, and production of high-quality wafers at a moderate cost. In this study, we investigate the gradual modulation of chemical composition in multi-stacked metal oxide semiconductor thin films to enhance the performance and bias stability of thin-film transistors (TFTs). It demonstrates that adjusting the Ga ratio in the indium gallium oxide (IGO) semiconductor allows for precise control over the threshold voltage and enhances device stability. Moreover, employing multiple deposition techniques addresses the inherent limitations of solution-processed amorphous oxide semiconductor TFTs by mitigating porosity induced by solvent evaporation. It is anticipated that solution-processed indium gallium oxide (IGO) semiconductors, with a Ga ratio exceeding 50%, can be utilized in the production of oxide semiconductors with wide band gaps. These materials hold promise for power electronic applications necessitating high voltage and current capabilities.
Laser-induced plasmonic sintering of metal nanoparticles (NPs) holds significant promise as a technology for producing flexible conducting electrodes. This method offers immediate, straightforward, and scalable manufacturing approaches, eliminating the need for expensive facilities and intricate processes. Nevertheless, the metal NPs come at a high cost due to the intricate synthesis procedures required to ensure long-term reliability in terms of chemical stability and the prevention of NP aggregation. Herein, we induced the self-generation of metal nanoparticles from Ag organometallic ink, and fabricated highly conductive electrodes on flexible substrates through laser-assisted plasmonic annealing. To demonstrate the practicality of the fabricated flexible electrode, it was configured in a mesh pattern, realizing multi-touchable flexible touch screen panel.
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Controlling Structures and Properties of NaCl‐Containing Alginate/Polyacrylamide Tough Hydrogels via a One‐Pot Process Taeuk Eom, Hyunseung Kim, Jihun Choi, Soon Joo Yoon, Yoon Kyeung Lee, Kwi‐Il Park, Chang Kyu Jeong Chemistry – A European Journal.2026;[Epub] CrossRef
Wearable sweat glucose monitoring patches enabled by double network hydrogel-MoS2/PEDOT: PSS nanocomposite Suraj Shinde, Omkar A. Patil, Sang Yoon Park, Se Jin Choi, Omkar Pawar, Daniel J. Joe, Sooman Lim, Han Eol Lee Microchemical Journal.2025; 215: 114309. CrossRef
Aluminum-induced crystallization (AIC) as a route to reduce the fabrication cost and to obtain polycrystalline Si (p- Si) thin-film of large grain size is a promising alternative of single-crystalline (s-Si) substrate or p-Si thin-film obtained by conventional methods such as solid phase crystallization (SPC) and laser-induced crystallization (LIC). As the AIC process occurs at the interface between a-Si and Al thin-films, there are various process and interface parameters. Also, it directly means that there is a certain parametric window to obtain p-Si of large grain size having uniform crystal orientation. In this article, we investigate the effect of the various process and interface parameters to obtain p-Si of large grain size and uniform crystal orientation from the literature review. We also suggest the potential use of the p-Si as a virtual substrate for the growth of various compound semiconductors in a form of low-dimension as well as thin-film as a way for their monolithic integration on Si.
Direct use of sunlight through the glass windows is an efficient way to reduce the energy consumption related to the heating, cooling, and lighting. Introduction of near-infrared modulating properties through colloidal doped metal oxide nanocrystals into the classical electrochromic materials accelerates the development of next-generation electrochromic devices. There has been a steady enhancement in the performance of electrochromic devices, necessitating a review of the recent progress in next-generation electrochromic devices employing doped metal oxide nanocrystals. This review provides an overview of the current developments in next-generation electrochromic smart windows utilizing colloidal doped metal oxide nanocrystals, with a focus on the key factors for achieving these advanced windows. Colloidal doped metal oxide nanocrystals are a crucial component in realizing and bringing to market the next generation of electrochromic windows, though further research and development are still required in this regard.
Flash lamp annealing (FLA) of metal nanoparticle (NP) ink has provided powerful strategies to fabricate highperformance electrodes on a flexible substrate because of its rapid processing capability (in milliseconds), low-temperature process, and compatibility with to roll-to-roll process. However, metal NPs [e.g., gold (Au), silver (Ag), copper (Cu), etc.] have limitations such as difficulty in synthesizing fine metal NPs (diameter less than 10 nm), high price, and degradation during ink storage and FLA processing. In this regard, organometallic ink has been proposed as a material that can replace metal NPs due to their low-cost (usually 1/100 times cheaper than metal nano inks), low-temperature processability, and high material stability. Despite these advantages, the fabrication of flexible electrodes through FLA treatment of organometallic compounds has not been extensively researched. In this paper, we experimentally guide how to determine the optimal conditions for forming electrodes on flexible substrates by considering material parameters, and flashlight processing parameters (energy density, pulse duration, etc) to minimize the difficulties that may arise during the FLA of organometallic ink.
Laser-induced plasmonic sintering of metal nanoparticles (NPs) is a promising technology to fabricate flexible conducting electrodes, since it provides instantaneous, simple, and scalable manufacturing strategies without requiring costly facilities and complex processes. However, the metal NPs are quite expensive because complicated synthesis procedures are needed to achieve long-term reliability with regard to chemical deterioration and NP aggregation. Herein, we report laser-induced Ag NP self-generation and sequential sintering process based on low-cost Ag organometallic material for demonstrating highquality microelectrodes. Upon the irradiation of laser with 532 nm wavelength, pre-baked Ag organometallic film coated on a transparent polyimide substrate was transformed into a high-performance Ag conductor (resistivity of 2.2 × 10-4 Ω·cm). To verify the practical usefulness of the technology, we successfully demonstrated a wearable transparent heater by using Ag-mesh transparent electrodes, which exhibited a high transmittance of 80% and low sheet resistance of 7 Ω/square.
Capacitive-type humidity sensors with a high sensitivity and fast response/recovery times have attracted a great attention in non-contact respiration biological signal monitoring applications. However, complicated fabrication processes involving high-temperature heat treatment for the hygroscopic film is essential in the conventional ceramic-based humidity sensors. In this study, a non-toxic ceramic/metal halide (BaTiO3(BT)/NaCl) humidity sensor was prepared at room temperature using a solvent-free aerosol deposition process (AD) without any additional process. Currently prepared BT/NaCl humidity sensor shows an excellent sensitivity (245 pF/RH%) and superior response/recovery times (3s/4s) due to the NaCl ionization effect resulting in an immense interfacial polarization. Furthermore, the non-contact respiration signal variation using the BT/NaCl sensor was determined to be over 700% by maintaining the distance of 20 cm between the individual and the sensor. Through the AD-fabricated sensor in this study, we expect to develop a non-contact biological signal monitoring system that can be applied to various fields such as respiratory disease detection and management, infant respiratory signal observation, and touchless skin moisture sensing button.
We present the structural and optical properties of Au@TiO2 core-shell microsphere structure prepared by a hydrothermal synthesis method. As a way to improve the efficiency of organic solar cells, the Au@TiO2 core-shell microsphere was synthesized to use the local surface plasmon resonance (LSPR) phenomenon. The synthesized results were confirmed to have the Au@TiO2 core-shell structure using a high-resolution transmission electron microscopy. An absorption was observed to occur at 527 nm belonging to the visible light region using a visible light spectroscopy, which supports the LSPR phenomenon. We suggest that the Au@TiO2 core-shell microsphere is highly likely to be applied to organic solar cells including dye-sensitized solar cells. In addition, we expect it to be widely used not only in the energy but also in the bio as well as in the environmental fields.
Direct exposure to toxic and hazardous gases has always been considered as the most pervasive problem worldwide, leading to a gradual increase in the number of asthma patients due to NOx/SOx gases inhaling and exposure to 50 ppm formaldehyde gases. Therefore, the development of accurate gas sensors is a key issue for resolving these problems. To address such issues, the development of membranes for selective filtering of target molecules as well as nanocatalyst for enhancing the sensing selectivity is highly crucial. In this review, the research progress for porous membrane materials (e.g. MOFs, and graphene) and nanocatalyst technology for the development of selective and accurate gas sensors will be discussed.
We fabricated plate typed shunt resistors composed of carbon nanotube (CNT) and metal alloy for measuring DC current. CNT plates were prepared from dispersed CNT/Urethane solution by squeezing method. Cu/Ni alloys were prepared from composition-designed alloy wires for adjusting the temperature coefficient of resistance (TCR) by pressing them. As well, we fabricated a hybrid resistor by squeezing the CNT/Urethane solution on the metal alloy plate directly. In order to confirm the composition ratio of the Cu/Ni alloy, we used an energy-dispersed X-ray spectroscopy (EDX). Cross-section and surface morphology were analyzed by using a scanning electron microscopy (SEM). Finally, we measured the initial resistance of 2.35 Ω at 25℃ for the CNT paper resistor, 7.56 mΩ for the alloy resistor, and 7.38 mΩ for the hybrid resistor. The TCR was also measured to be -778.72 ppm/℃ at the temperature range between 25℃ to 125℃ for the CNT paper resistor, 824.06 ppm/℃ for the alloy resistor, and 17.61 ppm/℃ for the hybrid resistor. Some of the hybrid resistors showed a near-zero TCR of 1.38, -2.77, 2.66, and 5.49 ppm/℃, which might be the world best-value ever reported. Consequently, we could expect an error-free measurement of the DC current using this resistor.
Non-volatile memory is approaching its fundamental limits with the Si3N4 storage layer, necessitating the use of alternative materials to achieve a higher programming/erasing speed, larger storage window, and better data retention at lower operating voltage. This limitation has restricted the development of the charge-trap memory, but can be addressed by using high-k dielectrics. The paper reviews the doping of nitrogen, titanium, and yttrium on high-k dielectrics as a storage layer by comparing MONOS devices with different storage layers. The results show that nitrogen doping increases the storage window of the Gd2O3 storage layer and improves its charge retention. Titanium doping can increase the charge capture rate of HfO2 storage layer. Yttrium doping increases the storage window of the BaTiO3 storage layer and improves its fatigue characteristics. Parameters such as the dielectric constant, leakage current, and speed of the memory device can be controlled by maintaining a suitable amount of external impurities in the device.
Modern thin film deposition processes require high deposition rates, low costs, and high-quality films. Atmospheric pressure plasma-enhanced chemical vapor deposition (AP-PECVD) meets these requirements. AP-PECVD causes little damage on thin film deposition surfaces compared to conventional PECVD. Moreover, a higher deposition rate is expected due to the surface heating effect of atomic hydrogens in AP-PECVD. In this study, polycrystalline silicon thin film was deposited at a low temperature of 100℃ and then AP-PECVD experiments were performed with various plasma powers and hydrogen gas flow rates. A deposition rate of 15.2 nm/s was obtained at the VHF power of 400 W. In addition, a metal foam showerhead was employed for uniform gas supply, which provided a significant improvement in the thickness uniformity.
In this study, we fabricated plate-type shunt resistors with thermal stability by parallelly connecting metal alloy plates with positive temperature coefficient of resistance (TCR) and carbon nanotube (CNT) plates with negative TCR. The metal alloy plates, which were prepared by alloying Cu and Mn with a composition of 91 wt% of Cu and 9 wt% of Mn, showed around 800 ppm/℃ of TCR, and the CNT plates prepared from the CNT solution by using the vacuum filtration method showed around -800 ppm/℃ of TCR. The shunt resistor that was fabricated by stacking metal alloy plates and CNT plates in this work showed about 46.93 ppm/℃ of TCR. Therefore, we conclude that a shunt resistor with low TCR can be realized by simply adjusting the TCR of the metal alloy only, because the TCR of the CNT plate has an identical value.
Bonding properties of epoxy-containing solder joints were investigated by a high temperature aging test. Specimens were prepared by bonding an R3216 standard chip resistor to an OSP-finished PCB by a reflow process with two basic types of solder (SAC305 & Sn58Bi) pastes and two epoxy-solder (SAC305+epoxy & Sn58Bi+epoxy) pastes. In all epoxy solder joints, an epoxy fillet was formed in the hardened epoxy, lying around the outer edge of the solder joint, between the chip and the Cu pad. In order to analyze the bonding characteristics of solder joints at high temperatures, a high-temperature aging test at 150°C was carried out for 14 days (336 h). After aging, the intermetallic compound Cu6Sn5 was found to have formed in the solder joint on the Cu pad, and the shear stress on the conventional solder joint was reduced by a significant amount. The reason that the shear force did not decrease much, even though in epoxy solder, was thatbecause epoxy hardened at the outer edge of the supported solder joints. Using epoxy solder, strong bonding behavior can be ensured due to this resistance to shear force，even in metallurgical changes such as those where intermetallic compounds form at solder joints.
Nanomaterials have considerable potential to solve several key challenges in various electrochemical devices, such as fuel cells. However, the use of nanoparticles in high-temperature devices like solid-oxide fuel cells (SOFCs) is considered problematic because the nanostructured surface typically prepared by deposition techniques may easily coarsen and thus deactivate, especially when used in high-temperature redox conditions. Herein we report the synthesis of a self-regenerated Pd metal nanoparticle on the perovskite oxide anode surface for SOFCs that exhibit self-recovery from their degradation in redox cycle and CH4 fuel running. Using Pd-doped perovskite, La(Sr)Fe(Mn, Pd)O3, as an anode, fairly high maximum power densities of 0.5 and 0.2 cm-2 were achieved at 1,073 K in H2 and CH4 respectively, despite using thick electrolyte support-type cell. Long-term stability was also examined in CH4 and the redox cycle, when the anode is exposed to air. The cell with Pd-doped perovskite anode had high tolerance against re-oxidation and recovered the behavior of anodic performance from catalytic degradation. This recovery of power density can be explained by the surface segregation of Pd nanoparticles, which are self-recovered via re-oxidation and reduction. In addition, self-recovery of the anode by oxidation treatment was confirmed by X-ray diffraction (XRD) and scanning electron microscopy (SEM).
We researched about a bulk metallic glass system as an additive to an Ag paste for high temperature thermoelectric modules. Bulk metallic glass (BMG) ribbons were produced by using a rapid solidification process (RSP) under a cooling rate condition higher than 10℃/sec. We investigated BMG characteristics of the ribbons by means of x-ray diffraction (XRD) and differential scanning calorimetry (DSC) in order to evaluate the glass transition temperature (Tg) and the recrystallization temperature (Tx) lower than 400℃. A milling process was also developed to apply the BMG ribbons to a commercial Al paste as an additive for lower sintering temperature.
In this paper, we discuss the fabrication of metal alloy resistors. We connected them in parallel to estimate their resistance and temperature coefficient of resistance (TCR). The fabricated resistors have different resistances, 5 and 10 Ω and different TCRs, 50 and 200 ppm/℃. Each resistor was confirmed to have the correct atomic composition through the use of energy dispersive X-ray (EDX). The resistors’ electrical properties were confirmed by measuring resistance and TCR. The resistance and TCR of the resistors connected in parallel were estimated through the increase in resistance due to the increase in temperature, and were compared with the measured values. We are confident that this TCR estimation technique, which uses the increase in resistance due to temperature, will be very useful in designing and fabricating resistors with low and stable TCR.
Fe2O3 is one of the most important metal oxides for gas sensing applications because of its low cost and high stability. It is well-known that the shape, size, and phase of Fe2O3 have a significant influence on its sensing properties. Many reports are available in the literature on the use of Fe2O3-based sensors for detecting gases, such as NO2, NH3, H2S, H2, and CO. In this paper, we investigated the gas-sensing performance of a Pt-doped ε-phase Fe2O3 gas sensor. Pt-doped Fe2O3 nanoparticles were synthesized by a Sol-Gel method. Platinum, known as a catalytic material, was used for improving gas-sensing performance in this research. The gas-response measurement at 300℃ showed that Fe2O3 gas sensors doped with 3%Pt are selective for NO2 gas and exhibita maximum response of 21.23%. The gas-sensing properties proved that Fe2O3 could be used as a gas sensor for nitrogen dioxide.
n-type silicon shows the better tolerance towards metal impurities with a higher minority carrier lifetime compared to p-type silicon substrate. Due to better lifetime stability as compared to p-type during illumination made the photovoltaic community to switch toward n-type wafers for high efficiency silicon solar cells. We fabricated the front electrode of the n-type solar cell with AgAl paste. The electrodes characteristics of the AgAl paste depend on the contact junction depth that is closely related to the firing temperature. Metal contact depth with p+ emitter, with optimized depth is important as it influence the resistance. In this study, we optimize the firing condition for the effective formation of the metal depth by varying the firing condition. The firing was carried out at temperatures below 670℃ with low contact depth and high contact resistance. It was noted that the contact resistance was reduced with the increase of firing temperature. The contact resistance of 5.99 mΩ㎠ was shown for the optimum firing temperature of 865℃. Over 900℃, contact junction is bonded to the Si through the emitter, resulting the contact resistance to shunt. we obtained photovoltaic parameter such as fill factor of 76.68%, short-circuit current of 40.2 mA/cm2, open-circuit voltage of 620 mV and convert efficiency of 19.11%.
In the present study, the CuNx-Cu-CuNx layer the partial pressure ratio Cu metal of Ar and N2 gas using a DC magnetron sputtering device, was generated by the In-situ method. CuNx layer was able to obtain a surface reflectance reduction effect from the advantages of the process and the external light. CuNx layer is gas partial pressure, DC the Power, the deposition time variable transmittance in response to the thickness and partial pressure ratio, the reflectance was measured. Ar:N2 gas ratio 10:10(sccm), DC power 0.35 A, was derived Deposition time 90 sec optimum conditions. Thus, according to the optimal thickness and the composition ratio was derived surface reflectance of 20.75%. In addition, to derive the value of △ Ra surface roughness of 0.467. It was derived CuNx band-gap energy of about 2.2 eV. Thus, to ensure a thickness and process conditions can be absorbed to maximize the light in a wavelength band in the visible light region. As a result, the implementation of the 1.2 ㏀ base line resistance of using the Cu metal. This is, 5 inch Metal mesh TSP(L/S: 4/270 ㎛) is in the range of the reference operation.
The resistive memory switching characteristics of resistive random access memory (ReRAM) using the amorphous GeSe thin film have been demonstrated at Al/Ti/GeSe/n+ poly Si structure. This ReRAM indicated bipolar resistive memory switching characteristics. The generation and the recombination of chalcogen cations and anions were suitable to explain the bipolar switching operation. Space charge limited current (SCLC) model and Poole-Frenkel emission is applied to explain the formation of conductive filament in the amorphous GeSe thin film. The results showed characteristics of stable switching and excellent reliability. Through the annealing condition of 400℃, the possibility of low temperature process was established. Very low operation current level (set current: ~ μA, reset current: ~ nA) was showed the possibility of low power consumption. Particularly, n+ poly Si based GeSe ReRAM could be applied directly to thin film transistor (TFT).
NiO serves as a window layer for Si photoelectric devices. Due to the wide energy bandgap of NiO, high optical transparency (over 80%) was achieved and applied for Si photoelectric devices. Due to the high the high mobility, the heterojunction device (Al/n-Si/SiO2/p-NiO/ITO) provide ultimately fast photoresponses of rising time of 38.33 μs and falling time of 39.25 μs, respectively. This functional NiO layer would provide benefits for high-performing photoelectric devices, including photodetectors and solar cells.
In this study, we investigated the color change of the normal light gray granite as the high value color granite. By coating the metal catalyst liquid on the surface of granite stone, the metal particles were penetrated into the granite and the color of granite was changed permanently through the annealing treatment. To increase penetration depth into the granite, we used DC (direct current) bias. Two kinds of bias were used such as DC bias and pulse DC bias. And the penetration time was changed as 30 and 60 min. In all cases, the color granite were successfully obtained. Regardless of the catalyst reaction time, the penetration depth was increased by using the bias treatment. We obtained a penetration depth of 21 mm with the DC pulse bias during 60 min.
The bonding characteristics of MLCCs (multi layer ceramic capacitor, C1608) lead-free solder (SAC305) joints were evaluated through thermal shock test (-40℃~125℃, total 1,800 cycle). After the test, IMCs( intermetallic compounds) growth and cracks were verified, also shear strengths were measured for degradation of solder joints. In addition, The thermal stress distributions at solder joints were analyzed to compare the solder joints changes before and after according to thermal shock test by FEA (finite elements analysis). We considered the effects of IMCs growth at solder joints. As results, the bonding characteristics degradation was occurred according to initial crack, crack propagations and thermal stress concentration at solder-IMCs interface, when the IMCs grown to solder inside.
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Reliability Evaluation of Epoxy Solder Joints for Medical Electronic Devices Yu-Jae Jeon, Min-Soo Kang Journal of the Korean Society of Manufacturing Technology Engineers.2021; 30(2): 127. CrossRef
This paper dealt with the PD (partial discharge) characteristics produced by metallic particles presented in a gas insulated switchgear. Four types of metallic particles such as a ball, a trapezoid, a rectangle, and a twist were fabricated and placed in a PD cell filled with SF6 gas. PD pulses were detected through a 50 Ω non-inductive resistor. Calibration was carried out according to IEC 60270 and the sensitivity was calculated as 4 mV/pC. Apparent charge, pulse count, DIV (discharge inception voltage), DEV (discharge extinction voltage), and TRPD (time resolved partial discharge) were analyzed. Among the metallic particle types, the twist frequently occurred PD pulse at the lowest DIV, while the rectangle showed the highest. DEV of the twist was about 2 times lower than that for the rectangle. Kurtosis of ball clustered at high value, and skewness of other three metallic particles distributed at low value. TRPD showed different distribution by metallic particle types.
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Analysis of PD Signal for Condition Monitoring of MV Switchboards by the Measurement of Transient Earth Voltage Guoming Wang, Woo-Hyun Kim, Jeong-Bae Kong, Gyung-Suk Kil, Hong-Keun Ji Transactions on Electrical and Electronic Materials.2018; 19(3): 195. CrossRef
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