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"Memories"

Capacitance-voltage Characteristics of MOS Capacitors with Ge Nanocrystals Embedded in HfO2 Gate Material
Byoung Jun Park, Hye Ryeong Lee, Kyoung Ah Cho, Sang Sig Kim
J Korean Inst Electr Electron Mater Eng 2008;21(8):699-705.   Published online August 1, 2008
DOI: https://doi.org/10.4313/JKEM.2008.21.8.699
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