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Capacitance-voltage Characteristics of MOS Capacitors with Ge Nanocrystals Embedded in HfO2 Gate Material

Byoung Jun Park, Hye Ryeong Lee, Kyoung Ah Cho, Sang Sig Kim
J Electr Electron Mater 2008;21(8):699-705.
Published online: August 1, 2008
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Capacitance-voltage Characteristics of MOS Capacitors with Ge Nanocrystals Embedded in HfO2 Gate Material
J Electr Electron Mater. 2008;21(8):699-705.   Published online August 1, 2008
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

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Include:
Capacitance-voltage Characteristics of MOS Capacitors with Ge Nanocrystals Embedded in HfO2 Gate Material
J Electr Electron Mater. 2008;21(8):699-705.   Published online August 1, 2008
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