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"MIM"

Dielectric Property Analysis of BaTiO3 Capacitor Manufactured by Inkjet Printing Process
Yu-jin Kim, Gyeong-yeong Lee, In-gon Lee, Ic-pyo Hong, Ji-hoon Kim
J Electr Electron Mater 2022;35(6):610-615.   Published online November 1, 2022
DOI: https://doi.org/10.4313/JKEM.2022.35.6.10
BaTiO3 is one of the ferroelectric materials with excellent dielectric properties such as high dielectric constant, low dielectric loss, and is widely used for the manufacturing of capacitors, piezoelectric converters, microsensors, and ferroelectric memories. Inkjet printing is a technology which uses digital and contactless methods which significantly improves flexibility associated with material and structural design, reducing manufacturing costs. Therefore, the top and bottom electrodes, BaTiO3 ink, and photocurable resin were all printed by an inkjet to produce a BaTiO3 capacitor. The properties of the printed thin film were analyzed. It was confirmed that the photocurable resin ink was well-infiltrated between the BaTiO3 powder particles printed by inkjet. The dielectric properties of the capacitor such as dielectric constant which varies in accordance with frequency, polarization and tunability that changes with voltage, were measured.
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Design and Analysis of Small Walking Robots Utilizing Piezoelectric Benders
Jong Man Park, Chi Hoon Song, Min Ho Park
J Electr Electron Mater 2020;33(5):380-385.   Published online September 1, 2020
DOI: https://doi.org/10.4313/JKEM.2021.33.5.8
Over the past decade, small robots have been of particular interest in the engineering field. Among the various types of small robots, biomimetic robots, which mimic animals and insects, have been developed for special activities in areas where humans cannot physically access. The optimal motion of a walking robot can be determined by the characteristics of the traversed surface (e.g., roughness, curvature, slope, materials, etc.). This study proposes three types of piezoelectric structures using different driving mechanisms, depending on the application range of the small walking robots. Dynamic modeling using computer-aided engineering optimized the shape of the robot to maximize its moving characteristics, and the results were also verified through its fabrication and experimentation. Three types of robots, named by their actuator shapes as I, π, & T-shape, were proposed regarding application for small scale ambulatory robots to different terrain conditions. Among these, the T-shaped robots were shown to have a wide range of speeds (from 2 mm/s up to 255 mm/s) and good carrying capacity (up to 10 g at 50 mm/s) through driving experiments. Based on this study, we proposed possible application areas for the three types of walking robot actuators.
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A Study on the Electrical Properties of MIM Structures Based on Ge2Sb2Te5 and Ge8Sb2Te11 Thin Films for ReRAM
Hwi-jong Jang, Heon Kong, Jong-bin Yeo, Hyun-yong Lee
J Electr Electron Mater 2017;30(3):144-147.   Published online March 1, 2017
In this study, Ge2Sb2Te5 and Ge8Sb2Te11 were used as an insulator layer to fabricate ReRAM devices. The resistance change is correlated to the appearance or disappearance of a conductivity filament at the surface of the GeSbTe layer. Changes in the electrical properties of ITO/GeSbTe/Ag devices were measured using a I-V-L measurement system. As a result, compared to the ITO/Ge8Sb2Te11/Ag device, this ITO/Ge2Sb2Te5/Ag ReRAM device exhibits highly uniform bipolar resistive switching characteristics, such as the operating voltages, and the resistance values.
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Analysis of Matching Characteristics of MIM Capacitors with Al2O3/HfO2/Al2O3
Jae Hyung Jang, Hyuk Min Kwon, Yi Jung Jung, Ho Young Kwak, Sung Gyu Kwon, Hwan Hee Lee, Sungyong Go, Weon Mook Lee, Song Jae Lee, Hi Deok Lee
J Electr Electron Mater 2012;25(1):1-5.   Published online January 1, 2012
In this paper, matching characteristic of MIM (metal-insulator-metal) capacitor with Al2O3/HfO2/Al2O3 (AHA) structure is analyzed. The floating gate capacitance measurement technique (FGMT) was used for analysis of matching characteristic of the MIM capacitors in depth. It was shown that matching coefficient of AHA MIM capacitor is 0.331%㎛ which is appropriate for application to analog/RF integrated circuits. It was also shown that the matching coefficient has a more strong dependence on the width than length of MIM capacitor.
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Semiconduclor : Perfect Interference Alignment for K-user MIMO X Network
Seong Ho Park, Ki Hong Park, Myeong Jin Kim, Young Chai Ko
J Electr Electron Mater 2011;24(2):95-101.   Published online February 1, 2011
In wireless X networks where all transmitters send the independent messages to all receivers, the theoretical bound on the degrees of freedom (DOF) and interference alignment (IA) scheme for its achievability are given by Cadambe and Jafar [1]. However, IA scheme for wireless X network may be infeasible in practice unless the transmitters have the perfect channel information. In addition, if the transmitter with single antenna uses time-varying channel coefficients as a beamforming vector, the infinite channel extension is required to achieve the theoretical bound on the DOF of wireless X networks with perfect IA scheme. In this paper, we consider K-user MIMO X network where K transmitters and K receivers have M antennas each. While the beamforming vectors have been constructed with multiple channel uses over multiple time slot in the earlier work, we consider the beamforming vectors constructed only by a spatial signature over unit time. Accordingly the channel information at the transmitters can be available instantaneously. Then we propose the perfect IA scheme with no channel extension. Based on our sum-rate analysis and the simulation results, we confirm that our proposed scheme can achieve MK/2 DOF which is quite close to the theoretical bound on the DOF region of wireless X networks.
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A Study on Physical Properties of Carbon Nitride Films and Application for Sensor Materials
J Electr Electron Mater 2007;20(5):436-442.   Published online May 1, 2007
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A Study on Electrical Characteristics of Organic Thin Film
J Electr Electron Mater 2006;19(10):953-959.   Published online October 1, 2006
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Deposition and Electrical Properties of Silicon Nitride Thin Film MIM Capacitors for MMIC Applications
Ho Geun Seong, Sun Jin So, Chun Bae Park
J Electr Electron Mater 2004;17(3):283-288.   Published online March 1, 2004
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