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"Low emissivity"

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"Low emissivity"

Regular Paper Characterization of Amorphous In-Si-O Multilayer for Low Emissivity Applications
Young Seong Lee, Sang Yeol Lee
J Korean Inst Electr Electron Mater Eng 2014;27(8):483-485.   Published online August 1, 2014
DOI: https://doi.org/10.4313/JKEM.2014.27.8.483
Transparent amorphous In-Si-O (ISO)/Ag/In-Si-O (ISO) has been reported for low emissivity(low-e) applications. Effective Si doping into the In2O3 matrix led to a completely amorphous ISO film aswell as a low resistivity and a high optical transmittance. The optical and electrical performances wereexamined by measuring transmittance with a UV-VIS spectrophotometer and resistivity with a Hall effectmeasurement. Consequently, low-e glass with ISO/Ag/ISO showed a high transparency in the visibleregion and low emissivity in the infrared region, indicating that ISO is a promising amorphoustransparent electrode for low-e glass.
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Characteristics of IGZO/Ag/IGZO Multilayer Thin Films Depending On Ag Thickness
Ya Jun Zhang, Hong Bea Kim, Sang Yeol Lee
J Korean Inst Electr Electron Mater Eng 2013;26(7):510-514.   Published online July 1, 2013
DOI: https://doi.org/10.4313/JKEM.2013.26.7.510
In order to prevent heat loss that occurs through the glass, low-emissivity (Low-E) coating methods with good insulating properties and high transmittance were used. lnGaZnO/Ag/InGaZnO (IGZO/Ag/IGZO) multilaver thin films have been deposited on XG glass substrate by HF magnetron sputtering. Depending on the different thickness of Ag in multilayer films, the structural and optical properties of Low-E multilayer films were analyzed. By XRI) analysis results, the multilayer thin films were observed to be amorphous structure regardless of Ag thickness. According to the AFM results, surface morphology of the multilayer films was observed and compared. Using UV-VIS spectroscopy, low emissivity propertty has been observed clearly with the transmittance of higher than 85% at visible range and lower than 30 at ll range.
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Effect of Ag Formation Mechanism on the Change of Optical Properties of SiInZnO/Ag/SiInZnO Multilayer Thin Films
Young Seon Lee, Sang Yeol Lee
J Korean Inst Electr Electron Mater Eng 2013;26(5):347-350.   Published online May 1, 2013
DOI: https://doi.org/10.4313/JKEM.2013.26.5.347
By inserting a very thin metal layer of Ag between two outer oxide layers of amorphous silicon indium zinc oxide (SIZO), we fabricated a highly transparent SJZO/Ag/SIZO multilayer on a glass substrate. In order to find the optimized thickness of Ag layers, we investigated the variation of optical properties depending on Ag thickness. It was found that the transition of Ag layer from island formation to a continuous film occurred at a critical thickness. Continuity of the Ag film is very important for optical properties in SIZO/Ag/SIZO multilayer. With about 15 nm thick Ag layer, the multilayer showed a high optical transmittance of 80% at 550 nm and low emissivity in IR.
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