The electrical characteristics of single-crystal composite superconductors produced by a melting process were studied by neutron irradiation. In order to improve the current characteristics of the YBa2Cu3O7-y superconductor, it is necessary to form an effective flux pinning center inside the superconductor. In this study, an increase in flux pinning was attempted through neutron irradiation onto YBa2Cu3O7-y superconductors. The neutron irradiation was performed at 30 MeV for 500 sec, The electrical properties of the superconductors were measured in a magnetic field of 5 Tesla at 50 K using a magnetic properties measurement system (MPMS). After neutron irradiation, the critical current density of the YBa2Cu3O7-y superconductor in a 1 Tesla magnetic field was 1×105 A/㎠. Once neutrons were irradiated at 30 MeV and 10 μA for 500 sec, the critical current density was observed to increase significantly. When neutrons are irradiated to a superconductor, micro-defects are created in the superconductor, and they act as flux pinning centers that hold the magnetic field generated when an electric current flows.
Wrinkle patterns were fabricated on styrene-butadiene-styrene (SBS) block copolymer substrates using ion-beam (IB) irradiation with various intensities. The wavelength of the wrinkle pattern increased as the IB intensity was increased from 800 to 1,600 eV. IB irradiation-induced changes in the surface properties that were confirmed via physicochemical surface analyses. X-ray photoelectron spectroscopy analysis revealed chemical surface reformation due to the IB irradiation, resulting in C-O/C=O bonds after IB irradiation that were not reported before. These results indicate that the surface chemical modification caused by IB irradiation is strongly related to the surface modulus, which is important when fabricating wrinkle patterns. Furthermore, a strong IB irradiation induced a strong compressive strain; thus the size of the wrinkle pattern was increased.
The alignment characteristics of liquid crystal (LC) molecules on a solution-derived lanthanum zinc oxide (LZO) film under ion-beam irradiation were demonstrated. Using the solution process, an LZO film was fabricated on the glass substrate and cured at 100℃. Afterwards, ion-beam irradiation was performed following the LC alignment method. Using this film, an LC cell was fabricated and the characteristics of the LC alignment were verified. Cross polarizing microscopy and the crystal rotation method were used to investigate the alignment state of the LC molecules on the LZO films. Furthermore, field emission scanning electron microscopy and X-ray photoelectron spectroscopy were used to explore the effect of the ion-beam irradiation on the LZO film. Through these, it was confirmed that the ion-beam irradiation induced surface modification, which demonstrated anisotropic physical and chemical surface characteristics. Due to this, uniform LC alignment was achieved. Finally, the residual DC and anchoring energy of the LC cell based on the LZO films were measured using a capacitance-voltage curve.
We investigated a solution-derived Y2O3 film treated by ion beam (IB) irradiation as a liquid crystal (LC) alignment layer. With IB irradiation, homogeneous LC alignment was achieved irrespective of the annealing temperature. To verify the effect of IB irradiation, we conducted surface analyses such as X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). As Y2O3 is a high-k material, the electro-optical properties of the twisted nematic (TN) cells were superior to those of conventional TN cells based on a rubbed polymer, with an LC rising time of 4.1ms and falling time of 2.9ms. The IB-irradiated Y2O3 is a good alternative as an alignment layer for fast-switching TN LC displays.
In this work, in order to effectively improve the electrical conductivity and visible light transmittance of ZnO thin films, ZnO single layer and ZnO/Ag bi-layer films were deposited on glass substrates by radio frequency and direct current magnetron sputtering, and then, the effects of an Ag buffer layer and electron beam irradiation on the electrical and optical properties of the films were investigated. The observed results indicate that ZnO 100 nm / Ag 7 nm films show higher opto-electrical performance than the ZnO single layer film. In addition, electron beam irradiation also effectively enhanced the visible transmittance and electrical conductivity of the ZnO/Ag bi-layer films.
In this work, we have investigated the effect of a 30-min thermal anneal at 550℃ on the electrical characteristics of neutron-irradiated 4H-SiC MOSFETs. Thermal annealing can recover the on/off characteristics of neutron-irradiated 4H-SiC MOSFETs. After thermal annealing, the interface-trap density decreased and the effective mobility increased in terms of the on-characteristics. This finding could be due to the improvement of the interfacial state from thermal annealing and the reduction in Coulomb scattering due to the reduction in interface traps. Additionally, in terms of the off-characteristics, the thermal annealing resulted in the recovery of the breakdown voltage and leakage current. After the thermal annealing, the number of positive trapped charges at the MOSFET interface was decreased.
The effect of low temperature (250℃) heat treatment after electron irradiation (irradiation time = 30, 180, 300s) on the chemical bonding and electrical properties of ZnO thin films prepared using a sol-gel process were examined. XPS (X-ray photoelectron spectroscopy) analysis showed that the electron beam irradiation decreased the concentration of M-O bonding and increased the OH bonding. As a result of the electron beam irradiation, the carrier concentration of ZnO films increased. The on/off ratio was maintained at ~105 and the VTH values shifted negatively from 11 to 1 V. As the irradiation time increased from 0 to 300s, the calculated S. S. (subthreshold swing) of ZnO TFTs increased from 1.03 to 3.69 V/decade. These values are superior when compared the sample heat-treated at 400℃ representing on/off ratio of ~102 and S. S. value of 10.40 V/decade.
This paper is designed to find out where power reaches the highest point as the load of solar cells varies. In addition, the current and power were measured when irradiation changes, and the correlation between current and power was investigated. On top of that, experiments were conducted with the light volume kept constant and with the incoming light angle changing in order to figure out the incoming light angle that produces the most power and to conduct analyses. It was ascertained that if the load increases, the current decreases and the voltage increases. Since the power of 0.9828[W] was the highest when measurements were done, it can be said that when a load of 30[%] is applied to the solar cells, they are the most efficient.
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