The printed and bifacial organic photovoltaics (OPVs) using a semi-transparent electrode structure to enhance light management were investigated. To optimize energy-band alignment for bifacial device structure, a cathode interlayer of ZnO nanoparticles with a low work function of 3.9 eV combined with a polyethyleneimine (PEI) layer was employed. Photon distribution simulations revealed the influence of structural parameters on device conductivity, light absorption, and surface morphology. The dispensing strength, adjusted via applied voltage during printing, significantly impacted device performance. At 13 V and 17 V, J-V characteristics were consistent; however, at 20 V, line width increased by approximately 100%, resulting in a 50% reduction in PCE. These findings highlight the critical relationship between spraying strength, line width, and efficiency, offering valuable insights for advancing printed OPV technologies.

Ni-InGaAs shows promise as a self-aligned S/D (source/drain) alloy for n-InGaAs MOSFETs (metal-oxide-semiconductor field-effect transistors). However, limited thermal stability and instability of the microstructural morphology of Ni-InGaAs could limit the device performance. The in situ deposition of a Pd interlayer beneath the Ni layer was proposed as a strategy to improve the thermal stability of Ni-InGaAs. The Ni-InGaAs alloy layer prepared with the Pd interlayer showed better surface roughness and thermal stability after furnace annealing at 570℃ for 30 min, while the Ni-InGaAs without the Pd interlayer showed degradation above 500℃. The Pd/Ni/TiN structure offers a promising route to thermally immune Ni-InGaAs with applications in future n-InGaAs MOSFET technologies.

Ni germanide (NiGe) is a promising alloy material with small contact resistance at the source/drain (S/D) of Ge MOSFETs. However, it is necessary to reduce the specific contact resistance between NiGe and the doped Ge S/D region in high-performance MOSFETs. In this study, a novel method is proposed to reduce the specific contact resistance between NiGe and p-type Ge (p-Ge) using a Tb interlayer. The specific contact resistance between NiGe and p-Ge was successfully decreased with the introduction of the Tb interlayer. To investigate the mechanism behind the reduction in the specific contact resistance, the elemental distribution and crystalline structure of NiGe were analyzed using secondary ion mass spectroscopy and X-ray diffraction. It is likely that the reduction in specific contact resistance was caused by an increase in the concentration of boron in the space between NiGe and p-Ge due to the influence of the Tb interlayer.