With the recent development of emerging technologies, information acquisition and delivery between users has been actively conducted, and inorganic thin film transfer technology that effectively transfers various materials and devices is being studied to develop flexible electronic devices accordingly. This is aimed at innovative structural changes and functional improvement of electronic devices in the era of the Internet of Things (IoT). In particular, advanced technologies such as micro- LEDs are used to realize high-resolution flexible displays, and the possibility of heterogeneous integrated technologies can be presented by precisely transferring materials to substrates through various transfer process. This paper introduced physical, chemical, and self-assembly transfer methods based on inorganic thin film materials to implement heterogeneous integrated flexible semiconductor systems and introduces the results of application studies of semiconductor devices obtained through different transfer technologies. These studies are expected to bring about innovative changes in the field of smart devices, medical technology, and user interfaces in the future.

For enhancing the flame-retardant properties of wallpapers, we developed an organic-inorganic hybrid solution with ZrSiO4 as a functional ceramic powder, coated on non-woven fabric using dip coating, spray coating, and slot-die coating methods. Their flame retardant properties were characterized by a 45° combustion tester, which is manufactured according to the flame-retardant performance standard (KOFEIS 1001 and KS F 2819). In organic-inorganic hybrid solution, with increasing the concentration of acid-catalyst (acetic acid), the precipitation of ZrSiO₄ powders increased, and the flame retardant properties decreased. The highest flame retardant result was obtained for the solution adding 5 wt% acetic acid. The optimization of the coating method and coating number resulted in the most excellent flame-retardant properties being obtained for the non-woven fabric coated for 5 or 7 times by dip coating method, and their flame-retardant properties corresponded to class 2 flame-retardant performance of wallpapers.

Methylammonium lead iodide (MAPbI₃) thin films were grown at low temperatures on glass substrates via 3-zone chemical vapor deposition. Lead iodide (PbI₂) and lead bis (dipivaloylmethanate) [Pb(dpm)₂] precursors were used as lead sources. Due to the high sublimation temperature (~400℃) of the PbI₂ precursor, a low substrate temperature could not be constantly maintained. Therefore, MAPbI₃ thin films degraded into the PbI₂ phase. In contrast, for the Pb(dpm)₂ precursor, a substrate temperature of ~120℃ was maintained because the sublimation temperature of Pb(dpm)₂ is as low as 130℃ at a high vapor pressure. As a result, high-quality MAPbI3 thin films were successfully grown on glass substrates using Pb(dpm)₂. The rms (root-mean-square) roughness of MAPbI3 thin films formed from Pb(dpm)₂ was as low as ~19.2 nm, while it was ~22.7 nm for those formed using PbI₂. The grain size of the films formed from Pb(dpm)₂ was as large as approximately 350 nm.

Inorganic-organic hybrid perovskite solar cells have demonstrated a significant achievement by reaching a certified power conversion efficiency of 25.2% in 2019 as compared to that of 3.8% in 2009. However, organic hole conductors such as PTAA and spiro-OMeTAD are known to be expensive and unstable when they are exposed to operational conditions. In this study, the inorganic hole conductor CuSCN was used to overcome such concerns. The influence of dipropyl sulfide (DPS) and diethyl sulfide (DES) as CuSCN deposition solvents on the underlying perovskite active layer was investigated. DES solvent was observed to be advantageous in terms of CuSCN solubility and mild for the perovskite layer, thereby resulting in a power conversion efficiency of 16.9%.

In this study, we prepared 40, 45, 50, 55, 60, 65, and 70 wt% content composites filled in epoxy matrix for two micro silica and three micro alumina types for use as a GIS heavy electric machine. As a filler type of epoxy composite, micro silica composites showed excellent AC breakdown strength properties compared to micro alumina composites in the case of electrical properties of micro silica and alumina. The electrical breakdown properties of micro silica composites increased with increasing filler content, whereas those of micro alumina decreased with increasing filler content. In the case of mechanical properties, the micro silica composite showed improved tensile strength and flexural strength compared with the micro alumina composite. In addition, mechanical properties such as tensile strength and flexural strength of micro silica and alumina composites decreased with increasing filler content. This is probably because O-H groups are present on the surface of silica in the case of micro silica but are not present on the surface of alumina in the case of micro alumina.

In this study, we developed the solution-processed PMMA-HfOx hybrid ReRAM devices to overcome the respective drawbacks of organic and inorganic materials. The performances of PMMA-HfOx hybrid ReRAM were compared to those of PMMA- and HfOx-based ReRAMs. Bipolar resistive switching behavior was observed from these ReRAMs. The PMMA-HfOx hybrid ReRAMs showed a larger operation voltage margin and memory window than PMMA-based and HfOx-based ReRAMs. The reliability and electrical instability of ReRAMs were remarkably improved by blending the HfOx into PMMA. An Ohmic conduction path was commonly generated in the LRS (low resistance state). In HRS (high resistance state), the PMMA-based ReRAM showed SCLC (space charge limited conduction). the PMMA-HfOx hybrid ReRAM and HfOx-based ReRAM revealed the Pool-Frenkel conduction. As aresult of flexibility test, serious defects were generated in HfOx film deposited on PI (polyimide) substrate. On the other hand, the PMMA and PMMA-HfOx films showed an excellent flexibility without defect generation.

In this paper, we present a novel hydrophilic coating material (Wellture Finetech, Korea) which can be utilized as a coating layer for anti-contamination for electrical and electronic system. The coating material was deposited on 4 inch silicon wafer with several different film thickness. The film thickness was controlled by spin coating speed. After curing of the film, we have scratched by permanent marker to check self-cleaning property of the film. Also we have executed several mechanical tests of the films. As the spin coating speed is increased, the film thickness was thickness was thinned from 230 nm to 125nm. Contact angle of the film lowered from 30° to 12° as the spin coating speed is increased from 700 to 2,500rpm. On permanent marker scratched film surface coated at 1,000 rpm. We have poured regular city water to investigate self cleaning property of the film. The scratches were gradually separated from the film surface due to super-hydrophilicity of the film. Hardness of coated film was 9H measured by ASTM D3363 method. And adhesion of all film was 5B tested by D3359 method. Also, to get exact hardness value of the film, we have utilized a nano-indenter. As spin speed is increased, the hardness of film was increased from 3 Gpa to 5 Gpa.

To study encapsulation method for large-area organic light emitting diodes (OLEDs), red emitting OLEDs were fabricated, on which Alq3 as organic buffer layer and LiF and Al as inorganic protective layers were deposited to protect the damage of OLED by epoxy. And then the OLEDs were attached to flat glass by printing method using epoxy. The basic structure of OLED doped with rubrene of 1 vol.% as emitting layer is ITO(150 ㎚)/2-TNATA(50 ㎚)/α-NPD(30 ㎚)/Alq3:Rubrene(30 ㎚)/Alq3(30 ㎚)/LiF(0.7 ㎚)/Al(100 ㎚). In case of depositing Alq3, LiF and Al and then attaching of flat glass onto OLED, current density, luminance, efficiency and driving voltage were not changed and lifetime was increased according to thickness of Al as inorganic protective layers. The lifetime of OLED/Alq3/LiF/Al_4/glass structure was 139 hours increased by 15.8 times more than bare OLED of 8.8 hours and 1.6 times more than edge sealed OLED of 54.5 hours.

To study encapsulation method for large-area organic light emitting diodes (OLEDs), red emitting OLEDs were fabricated, on which LiF and Al were deposited as inorganic protective films. And then the OLED was attached to flat glass by printing method using epoxy. In case of direct coating of epoxy onto OLED by printing method, luminance and current efficiency were remarkably decreased because of the damage to the OLED by epoxy. In case of depositing LiF and Al as inorganic protective films and then coating of epoxy onto OLED, luminance and current efficiency were not changed. OLED lifetime was more increased through inorganic protective films between OLED and flat glass than that without any encapsulation (8.8 h), i.e., 47 (LiF/Al/epoxy/glass), 62 (LiF/Al/LiF/epoxy/glass), and 84 h (LiF/Al/Al/epoxy/glass). The characteristics of OLED encapsulated with inorganic protective films (attached to flat glass) showed the possibility of application of protective films.