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J Electr Electron Mater : Journal of Electrical and Electronic Materials

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"Hole mobility"

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"Hole mobility"

A Review of Electronic Devices Based on Halide Perovskite Materials
Hyeong Gi Park, Jungyup Yang
J Korean Inst Electr Electron Mater Eng 2024;37(5):519-526.   Published online September 1, 2024
DOI: https://doi.org/10.4313/JKEM.2024.37.5.8
This review examines the use of halide perovskite materials in electronic devices, highlighting their exceptional optoelectronic properties and the challenges associated with them. Despite their potential for high-performance devices, practical applications are limited by sensitivity to environmental factors such as moisture and oxygen, etc. We discuss advances in enhancing stability and operational reliability, featuring innovative synthesis methods and device engineering strategies that help mitigate degradation. Furthermore, we explore the integration of perovskites in applications such as field-effect transistors and LEDs, emphasizing their transformative potential. This review also outlines future research directions, stressing the need for ongoing improvements in material stability and device integration to fully realize the commercial potential of perovskites.
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Hole Mobility Characteristics of Biaxially Strained SiGe/Si Channel Structure with High Ge Content
J Korean Inst Electr Electron Mater Eng 2008;21(1):44-48.   Published online January 1, 2008
DOI: https://doi.org/10.4313/JKEM.2008.21.1.044
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EL Properties of OLEDs with Different Crystal Structures of Hole Injection Layers of Copper(2)-phthalocyanine
Eun Ju Lim, Kie Jin Lee, Woo Mi Han, Jung Yoon E, Deok Joon Cha, Young San Lee, Jin Tae Kim
J Korean Inst Electr Electron Mater Eng 2003;16(2):113-119.   Published online February 1, 2003
DOI: https://doi.org/10.4313/JKEM.2003.16.2.113
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