The transparent electrode characteristics of the SnO₂/AgNi/SnO₂ (OMO) multilayer structures prepared by sputtering were investigated according to the annealing temperature. Ni-doped Ag of various compositions was selected as the metal layer and heat treatment was performed at 100~300℃ to evaluate the thermal stability of the metals. The manufactured OMO multilayer structures were heat treated for 6 hours at 400~600℃ in an N₂ atmosphere. The structural, electrical, and optical properties of the OMO structures before and after annealing were evaluated and analyzed using a UV-VIS spectrophotometer, 4-point probe, XPS, FE-SEM, etc. OMO with Ni-doped Ag shows improved performance due to the reduction of structural defects of Ag during annealing, but OMO structure with pure Ag shows degradation characteristics due to Ag diffusion into the oxide layer during high-temperature annealing. The figure of merit (FOM) of SnO₂/Ag/SnO₂ was highest at room temperature and gradually decreased as the heat treatment temperature increased. On the other hand, the FOM value of SnO₂/AgNi/SnO₂ mostly showed its maximum value at high temperature(~550℃). In particular, the FOM value of SnO₂/Ag-Ni (3.2 at%)/SnO₂ was estimated to be approximately 2.38×10^-2 Ω^-1. Compared to transparent electrodes made of other similar materials, the FOM value of the SnO₂/Ag-Ni (3.2 at%)/SnO₂ multilayer structure is competitive and is expected to be used as an alternative transparent conductive electrode in various devices.

Citations

• Strategies and Multilayer Architectures for Decoupling Conductivity–Transparency Trade-Off
  Xi Cao, Yuying Feng, Zhengjie Guo, Xuezhi Li, Yixian Xie, Chenyao Huang, Yikun Yang, Fuyueyang Tan, Kaiquan Lei, Zaijin Li, Yi Qu, Lin Li
  Coatings.2026; 16(8): 915.     CrossRef

A fire, be it caused intentionally or unintentionally, leads to economic loss and physical damage, and requires digestion. The number of fires is increasing yearly, and electrical fires account for more than 30% among the main causes of fires. Electric wires that catch fire typically employ silicone coatings; silicone has organic as well as inorganic properties. Silicon is a natural, nonexistent, synthetic product with numerous applications. In this study, a silicon rubber for application in wires was prepared by high-temperature vulcanization (HTV) with a Shore A hardness of 70. We report results for the flame retardancy test and the fire safety characteristics via inorganic analysis. For this, a quartz inorganic material was added to the wire specimen, and 18% powdered extinguishing agent ammonium phosphate and expanded vermiculite respectively. Thus, expanded vermiculite showed the best flame retardancy and fire safety characteristics.

In this study, a high-temperature vulcanizing (HTV) method was used to achieve a shore a hardness of 70. The basic base was composed of 60% silicon gum (GUM) which is a high-viscosity polymer, 30% fumed silica (FS), and 5% of plasticizer. The GUM and FS were mixed well with less than 1% silane to improve rubber strength. Expanded vermiculite was added as a filler at 10%, 15%, and 20%. The curing conditions were 170℃ for 10 min and a molding method was applied. We report herein, the results of inorganic analysis and flame-retardant and tracking tests on the expanded vermiculite. The flame retardance and tracking test outcomes for a shore a hardness of 70 were found to be optimal when the expanded vermiculite content was 10%.

This paper describes the development of a piezoelectric level switch, which aims to effectively monitor the level status in high ambient temperatures. In order to adjust the impedance near the resonant frequency and temperature characteristics, the effect of the case and backing layer materials on its performance was analyzed using the finite element method (FEM). The suggested prototype new level switch has three heat-sink plates attached to SUS bar of 230 mm long, and case of PEEK which contains PZT sensing part. To illustrate the validity of this level switch, 10 samples are prepared and investigated the sensing performance through the high and low temperature ambient.

In this paper, experimental analyses have been performed to compare the electrical characteristics of n channel LT(low temperature) and HT(high temperature) poly-Si TFTs(polycrystalline silicon thin film transistors) on quartz substrate according to activated step annealing. The size of the particles step annealed at low temperature are bigger than high temperature poly-Si TFTs and measurements show that the electric characteristics those are transconductance, threshold voltage, electric effective mobility, on and off current of step annealed at LT poly-Si TFTs are high more than HT poly-Si TFT`s. Especially we can estimated the defect in the activated grade poly crystalline silicon and the grain boundary of LT poly-Si TFT have more high than HT poly-Si TFT`s due to high off electric current. Even though the size of particles of step annealed at low temperature, the electrical characteristics of LT poly-Si TFTs were investigated deterioration phenomena that is decrease on/off current ratio depend on high off current due to defects in active silicon layer.

Analyzing electrical degradation of polycrystalline silicon transistor to applicable at several environment is very important issue. In this research, after fabricating p channel poly crystalline silicon TFT (thin film transistor) electrical characteristics were compare and analized that changed by gate bias with first measurement. As a result on and off current was reduced by variation of gate bias and especially re duce ratio of off current was reduced by 7.1×101. On/off current ratio, threshold voltage and electron mobility increased. Also, when channel length gets shorter on/off current ratio was increased more and thresh old voltage increased less. It was cause due to electron trap and de-trap to gate silicon oxide by variation of gate bias.