We demonstrate the utilization of ion gel gate dielectrics for operating non-volatile transistor memory devices based on polymer semiconductor thin films. The gating process in typical electrolyte-gated polymer transistors occurs upon the penetration and escape of ionic components into the active channel layer, which dopes and dedopes the polymer film, respectively. Therefore, by controlling doping and dedoping processes, electrical current signals through the polymer film can be memorized and erased over a period of time, which constitutes the transistor-type memory devices. It was found that increasing the thickness of polymer films can enhance the memory performance of device including (i) the current signal ratio between its memorized state and erased state and (ii) the retention time of the signal.
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Nonvolatile Electric Double-Layer Transistor Memory Devices Embedded with Au Nanoparticles Jaemok Koo, Jeehye Yang, Boeun Cho, Hyunwoo Jo, Keun Hyung Lee, Moon Sung Kang ACS Applied Materials & Interfaces.2018; 10(11): 9563. CrossRef
Review Article: Atomic layer deposition of doped ZnO films Zhengning Gao, Parag Banerjee Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films.2019;[Epub] CrossRef
Experimental Study on Fabrication of AZO Transparent Electrode for Organic Solar Cell Using Selective Low-Temperature Atomic Layer Deposition Ki-Cheol Kim, Gen-Soo Song, Hyung-Tae Kim, Kyung-Hoon Yoo, Jeong-Jin Kang, Jun-Young Hwang, Sang-Ho Lee, Kyung-Tae Kang, Heui-Seok Kang, Young-June Cho Transactions of the Korean Society of Mechanical Engineers B.2013; 37(6): 577. CrossRef
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