This study used the heat conductive silicone rubber sample of 0.95 mm thickness to research the properties of current by changing voltage. When the 1, 10, 30, 60, and 90 minute have passed, the running current has been measured through the applied voltage range of 200 V～800 V on setting temperature of 110℃～170℃. As the temperature increased in applied voltage of 800 V, so did the current value according to time in proportion to the increasing temperature. In an analysis of FT-IR (fouriertransform infrared) spectrum, the hydroxyl radicals group(O-H) was created by effects of the hydrogen that methyl group is eliminated by addition of the cross-linking agent peroxide.

In this study, using the silicone rubber sample of 4 cm × 4 cm × 0.1 cm for low voltage cable,the electrostatic electrification properties of three samples that the conductive Al of 0%, 25%, and 50% isattached to the surface of sample was measured. The following conclusion was obtained through thisexperiment. 1) In case of the sample which has the Al area of 50%, the higher the humidity to 90% in thetemperature of 10℃, the electrostatic electrification voltage was reduced about 0.25 kV to 0.02 kV, and itconfirmed that the electrostatic electrification voltage was in constant about 0.02 kV in the temperature over20℃. 2) Increasing the Al area of samples of 0%, 25%, and 50% in temperature of 10℃, it confirmed thatthe electrostatic electrification voltage was reduced by about 2.67 kV, 2.02 k, 0.21 kV. 3) This study showsthat the conductor, followed by temperature and humidity affects the electrostatic electrification voltage.

Silicon nitride thin film deposited with Plasma Enhanced Chemical Vapor Deposition was treated by a nitrogen plasma generated by Inductively Coupled Plasma at room temperature. The treatment was investigated by Fourier Transform Infrared Spectroscopy and Atomic Force Microscopy on the surface at various RF source powers at two RF bias powers. The amount of hydrogen was reduced and the surface roughness of the films was decreased remarkably after the plasma treatment. In order to understand the causes, we analyzed the plasma diagnostics by Optical Emission Spectroscopy and Double Langmuir Probe. Based on these analysis results, we show that the nitrogen plasma treatment was effective in the improving of the properties silicon nitride thin film for flexible display.

The silicon nitride films were prepared by chemical vapor deposition using inductively coupled plasma. During the deposition, the substrate was heated at 150℃ and power 1,000 W. To evolution low temperature manufacture, we have studied the role of source gases, SiH4, NH3, N2, and H2, to produce Si-N and N-H bond in a-SiNx:H film growth. SiH4, NH3, and N2 flow rate fixed at 100, 10, and 10 sccm, H2 flow rate varied from 0 to 10 sccm by small scale. To get the electrical characteristics, we make MIM structure, and analysis surface bonding state. Experimental data show that Si-N and N-H bond is increased and hence electrical characteristics is showed 3 MV/cm breakdown-voltage, and leakage-current 10(-7) A/cm2.