In this study, we fabricated multilayer graphene on a glass substrate by stacking the monolayer graphene synthesized via chemical vapor deposition. The electrical sheet resistance and optical transmittance were evaluated to confirm the quality of the stacked multilayer graphene. Using the fabricated multilayer graphene/glass structure, we characterized its thermal radiative property in terms of the integrated emissivity. The integrated emissivity of the multilayer graphene/glass structure was tuned from 0.91 to 0.72 when the number of graphene layers was changed from 1 to 12. We also demonstrated that the emissivity tunability provided a way to control the apparent temperature of an object that can be used in infrared stealth applications.

Transparent amorphous In-Si-O (ISO)/Ag/In-Si-O (ISO) has been reported for low emissivity(low-e) applications. Effective Si doping into the In2O3 matrix led to a completely amorphous ISO film aswell as a low resistivity and a high optical transmittance. The optical and electrical performances wereexamined by measuring transmittance with a UV-VIS spectrophotometer and resistivity with a Hall effectmeasurement. Consequently, low-e glass with ISO/Ag/ISO showed a high transparency in the visibleregion and low emissivity in the infrared region, indicating that ISO is a promising amorphoustransparent electrode for low-e glass.

In order to prevent heat loss that occurs through the glass, low-emissivity (Low-E) coating methods with good insulating properties and high transmittance were used. lnGaZnO/Ag/InGaZnO (IGZO/Ag/IGZO) multilaver thin films have been deposited on XG glass substrate by HF magnetron sputtering. Depending on the different thickness of Ag in multilayer films, the structural and optical properties of Low-E multilayer films were analyzed. By XRI) analysis results, the multilayer thin films were observed to be amorphous structure regardless of Ag thickness. According to the AFM results, surface morphology of the multilayer films was observed and compared. Using UV-VIS spectroscopy, low emissivity propertty has been observed clearly with the transmittance of higher than 85% at visible range and lower than 30 at ll range.

LED lighting is sensitive because made by semiconductor. So it has been researched about radiation of heat technologies for long time. In addition, measurement and assessment a radiation of heat also conducted. It is necessary to get a date of accuracy temperature on the board after LED driven for measuring Junction temperature of LED Lighting. For this research we use 5 chip which is 4 W power on top of LED lighting board made by aluminum. Thermal camera effects to emissivity depending on material and property of surface in LED board because it determines thermal energy which emitted from material surface. It is not only thermal camera has not a standard about emissivity. It has an error of temperature when emissivity was measured by thermal camera. We confirmed that emissivity and reflected temperature depending on color and quality of surface throughout experiment.

By inserting a very thin metal layer of Ag between two outer oxide layers of amorphous silicon indium zinc oxide (SIZO), we fabricated a highly transparent SJZO/Ag/SIZO multilayer on a glass substrate. In order to find the optimized thickness of Ag layers, we investigated the variation of optical properties depending on Ag thickness. It was found that the transition of Ag layer from island formation to a continuous film occurred at a critical thickness. Continuity of the Ag film is very important for optical properties in SIZO/Ag/SIZO multilayer. With about 15 nm thick Ag layer, the multilayer showed a high optical transmittance of 80% at 550 nm and low emissivity in IR.