Aggressive device scaling has severely degraded the switching characteristics of CMOS transistors. This issue has led to the development of tunneling FETs (TFETs) as an alternative. TFETs, with their asymmetric doping of the source and drain regions, offer improved subthreshold swing (SS) compared to conventional MOSFETs. However, despite this advantage, TFETs still suffer from ambipolar current, which increases off-state current (IOFF). This paper introduces an approach to applying hetero gate dielectrics (HGDs) in nanosheet (NS) TFETs to reduce ambipolar current characteristics. The magnitude of the drain electric field is reduced by selectively forming a high-k dielectric near the source region This configuration allows the TFETs to avoid unintended band-to-band tunneling (BTBT) and suppress ambipolar current during the off-state.

In parallel with the efforts to improve the device performance in modern integrated circuits, it is necessary to downscale their core components, field-effect transistors (FETs), generally gauged by their physical gate length. Upon such device scaling, the emergence of the short-channel effect impedes further scaling into the nanometer scale in the silicon VLSI (Very-Large-Scale-Integration) system. To address this issue, two-dimensional (2D) semiconductors, leveraging their atomically thin thickness and dangling-bond-free characteristics, are being highlighted as a material solution for future scaling technology without severe mobility degradation. Despite the expected ideal physical properties, 2D semiconductors have yet to realize their full potential owing to the limited development of integration technology. In this context, we survey and review the tailored van der Waals integration technologies for 2D FETs. In particular, we provide an in-depth study of both van der Waals integrated contact and dielectric methods along with an explanation of customized materials. In essence, this van der Waals integrationcentered approach will be a core strategy to implement the high-performance 2D transistors that meet the demand of FET miniaturization.

Citations

• Single-Molecule Manipulation Techniques Based on Mechanical, Electrical, and Structural Control
  Jeong Hun Shin, Tae Won Nam
  Journal of Electrical and Electronic Materials.2026; 39(3): 247.     CrossRef

Two-dimensional materials have shown a great promise for the next-generation electronic materials due to their unique optical, physical, and chemical properties that are distinct from their bulk counterparts. Their atomic-level thickness, the feature for flexible tenability, and exposed huge surface allow various approaches for high-performance nanoscale devices. Especially, this review highlights the recent progress on two-dimensional dielectric nanosheets, which are obtained by cheap and mass-producible solution-based exfoliation process, accompanied by the preparation methods, various deposition methods, and the characteristics of devices using a dielectric nanosheet thin films. We also present a perspective on the advantages offered by this two-dimensional dielectric nanosheets for the upcoming future nanoelectonics.

Herein, we report the fabrication of low-voltage N-type organic field-effect transistors by using high capacitance fluorinated polymer gate dielectrics such as P(VDF-TrFE), P(VDF-TrFE-CTFE), and P(VDF-TrFE-CFE). Electronwithdrawing functional groups in PVDF-based polymers typically cause the depletion of negative charge carriers and a high contact resistance in N-channel organic semiconductors. Therefore, we incorporated intermediate layers of a low-k polymerto prevent the formation of a direct interface between PVDF-based gate insulators and the semiconducting active layer. Consequently, electron depletion is inhibited, and the high charge resistance between the semiconductor and source/drain electrodes is remarkably improved by the in corporation of solution-processed charge injection layers.

We investigated the phase evolution, microstructure, and microwave dielectric properties of Na- and Zr-doped Ba(Mg_0.5W_0.5)O₃ [i.e., (Ba_1-2xNa_2x)(Mg_0.5-xZr_xW_0.5)O₃] ceramics. BaWO₄ as a secondary phase was observed in all compositions, and it increased as the dopant concentration increased. All specimens revealed a dense microstructure. For the composition of x=0.01, polyhedral grains were observed. As the dopant concentration increased, the densification and the grain growth were promoted by a liquid phase. The quality factor(Q×f₀) decreased remarkably, whereas the dielectric constant (ε_r) tended to decrease as the dopant concentration increased. The dielectric constant, quality factor, and temperature coefficient of the resonant frequency of the composition of x=0.01 sintered at 1,700℃ for 1 h were 18.6, 216,275 GHz, and -22.0 ppm/℃, respectively.

Citations

• Structural, microstructural, opto-electronic and dielectric studies of Ba(Mg1-xZnx)1/2W1/2O3 (0.00 ≤ x ≤ 0.40) ceramics for dielectric resonators application
  Farhan Ullah, Asad Ali, Tanveer Ahmad, Salhah Hamed Alrefaee, Hala Siddiq, Farkhod Rakhmonov, Naseem Akhter, Vineet Tirth, Ali Algahtani, Abid Zaman
  Ceramics International.2026; 52(16): 31004.     CrossRef

We investigated the physical properties of stoichiometric and non-stoichiometric oxide doped complex perovskite, Ba(Zn1/3Ta2/3)O3 ceramics and their impacts on the microwave dielectric performances using various characterization techniques such as X-ray diffraction, scanning electron microscopy, transmission electron microscopy, and network analyzer. According to the measurement of lattice constant changes, anomalous lattice volume contraction of ZrO2 doped Ba(Zn1/3Ta2/3)O3 sample only showed the dielectric quality factor enhancements, which was due to the lattice volume contraction as well as the 1:2 B-site cation ordering. In addition, NiO doping was useful to the stabilization of temperature coefficient of resonance frequency.

Citations

• A Study on the Enhancement of Cooling Efficiency for the Cabinet of Automatic Controller in the Interior of Industrial Building
  Soon-Ho Kim, Hyun-Jung Park
  Journal of the Korea Society For Power System Engineering.2013; 17(6): 79.     CrossRef