Long lifetime, low power consumption, and environmental friendliness have enabled light-emitting diode (LED) lighting to rapidly replace conventional light sources such as incandescent and fluorescent lamps. In particular, AC-LED lighting systems can be directly powered by commercial alternating current (AC) sources; however, they suffer from significant luminance deviation caused by uneven current distribution among LED light-emitting modules. This paper proposes a lighting control method that improves flicker performance while maintaining lamp brightness and effectively reduces luminance deviation in AC-LED lighting. The proposed method reduces luminance deviation by controlling the lighting order of multiple LED light-emitting modules. Among four LED modules, only the required number of modules is continuously turned on, and the lighting priority alternates between rectification cycles. Specifically, during odd rectification cycles, LED modules are activated sequentially in ascending order (11→12→13→14), whereas during even rectification cycles, they are activated in descending order (14→13→12→11). By alternately applying continuous lighting control with opposite activation orders, the proposed reverse alternating lighting control method equalizes the current distribution among LED modules. As a result, luminance uniformity is improved, electrical stress concentration on specific modules is reduced, and the operational lifetime of the LED modules is extended compared with the conventional fixed-sequence lighting control method.

Abstract In this study, to develop composition ceramics for energy harvesting devices, Pb(Ni_1/3Nb_2/3)O₃-Pb(Zr Ti)O₃ system ceramics substituted with Pb(Mg_1/2W_1/2)O₃ were manufactured by conventional mixed oxide method using Li₂CO₃ and Na₂CO₃ (LNCO) as sintering aids. Their microstructure and piezoelectric properties were also investigated. At the specimen sintered at 930℃, high values of piezoelectric properties appeared: the dielectric constant (εr) of 2,522 planar electromechanical coupling factor kp of 0.602, and k₃₁ of 0.385, d31 = 229 [pC/N], g₃₁ = 10.13 [mV.m/N], Qm of 70, respectively. These values were suitable for the application of devices such as energy harvesting devices and ultrasonic devices.

The mounting demand for sustainable, self-powered biomedical devices, particularly those engineered for extreme environments, has established triboelectric nanogenerators (TENGs) as a prominent technology in energy harvesting research. This review examines state-of-the-art biomaterial synthesis strategies essential for developing high-performance bioelectronic TENGs that can operate reliably under harsh conditions, including elevated temperatures, extreme humidity, and mechanical strain. It begins with a comprehensive overview of the fundamental principles of triboelectricity and subsequently addresses the pivotal challenges associated with efficient charge generation and retention in such challenging settings. The content places particular emphasis on recent advancements in composite material engineering and structure design for high-efficiency mechanisms, with a particular focus on biocompatible and environmentally resilient materials. The integration of TENGs into wearable sensors, implantable devices, and self-powered monitoring systems is also investigated, demonstrating their transformative potential for bioelectronic applications. Our goal subsequently underscores persistent limitations to overcome, including those pertaining to fabrication scalability and long-term operational stability, while concurrently proposing prospective research directions. Consequently, this work underscores how innovative biomaterial synthesis and bioelectronic devices can enable the development of next-generation, high-performance, self-powered devices suited for extreme biomedical environments.

In parallel with the efforts to improve the device performance in modern integrated circuits, it is necessary to downscale their core components, field-effect transistors (FETs), generally gauged by their physical gate length. Upon such device scaling, the emergence of the short-channel effect impedes further scaling into the nanometer scale in the silicon VLSI (Very-Large-Scale-Integration) system. To address this issue, two-dimensional (2D) semiconductors, leveraging their atomically thin thickness and dangling-bond-free characteristics, are being highlighted as a material solution for future scaling technology without severe mobility degradation. Despite the expected ideal physical properties, 2D semiconductors have yet to realize their full potential owing to the limited development of integration technology. In this context, we survey and review the tailored van der Waals integration technologies for 2D FETs. In particular, we provide an in-depth study of both van der Waals integrated contact and dielectric methods along with an explanation of customized materials. In essence, this van der Waals integrationcentered approach will be a core strategy to implement the high-performance 2D transistors that meet the demand of FET miniaturization.

This review examines the use of halide perovskite materials in electronic devices, highlighting their exceptional optoelectronic properties and the challenges associated with them. Despite their potential for high-performance devices, practical applications are limited by sensitivity to environmental factors such as moisture and oxygen, etc. We discuss advances in enhancing stability and operational reliability, featuring innovative synthesis methods and device engineering strategies that help mitigate degradation. Furthermore, we explore the integration of perovskites in applications such as field-effect transistors and LEDs, emphasizing their transformative potential. This review also outlines future research directions, stressing the need for ongoing improvements in material stability and device integration to fully realize the commercial potential of perovskites.

This study offers a comprehensive evaluation of the role and impact of advanced power semiconductors in solar module systems. Focusing on silicon carbide (SiC) and gallium nitride (GaN) materials, it highlights their superiority over traditional silicon in enhancing system efficiency and reliability. The research underscores the growing industry demand for high-performance semiconductors, driven by global sustainable energy goals. This shift is crucial for overcoming the limitations of conventional solar technology, paving the way for more efficient, economically viable, and environmentally sustainable solar energy solutions. The findings suggest significant potential for these advanced materials in shaping the future of solar power technology.

Micro light-emitting diodes (LEDs), with a chip size of 100 micrometers or less, have attracted significant attention in flexible displays, augmented reality/virtual reality (AR/VR), and bio-medical applications as next-generation light sources due to their outstanding electrical, optical, and mechanical performance. In the realm of bio-medical devices, it is crucial to transfer tiny micro LED chips onto desired flexible substrates with low precision errors, high speed, and high yield for practical applications on various parts of the human body, including someone’s face and organs. This paper aims to introduce a fabrication process for flexible micro LED devices and propose micro LED transfer techniques for cosmetic and medical applications. Flexible micro LED technology holds promise for treating skin disorders, cancers, and neurological diseases.

In this paper, a 1,200 V Si-based IGBT used in electric vehicles and new energy industries was designed. A field stop IGBT with a separate gate structure, which is the proposed structure, was designed to change trench depth and split gate width variables. Then, the general trench structure and electrical characteristics were compared and analyzed. As a result of conducting the trench depth experiment, it was confirmed that the breakdown voltage was the highest at 6 μm, and the on-state voltage drop was the lowest at 3.5 μm. In the separate gate width experiment, it was confirmed that the breakdown voltage decreased as the variable increased, and the on-state voltage drop increased. Therefore, it may be seen that it is preferable not to change the width of the separate gate. In addition, experiments show that there is no difference in on-state voltage drop compared to a structure in which a general field stop structure has a separate gate structure. In other words, it is determined that adding a dummy gate with a separate gate structure to the active cell will significantly improve the on-voltage drop characteristics, while confirming that the on-voltage drop does not change, and while having excellent characteristics in terms of breakdown voltage.

In this study, the heteroepitaxial thin film growth of β-Ga₂O₃ was studied according to the position of the susceptor in mist-CVD. The position of the susceptor and substrate was moved step by step from the center of the hot zone to the inlet of mist in the range of 0~50 mm. It was confirmed that the average thickness increased to 292 nm (D1), 521 nm (D2), and 580 nm (D3) as the position of the susceptor moved away from the center of the hot zone region. The thickness of the lower region of the substrate is increased compared to the upper region. The surface roughness of the lower region of the substrate also increased because the nucleation density increased due to the increase in the lifetime of the mist droplets and the increased mist density. Therefore, thin film growth of β-Ga₂O₃ in mist-CVD is performed by appropriately adjusting the position of the susceptor (or substrate) in consideration of the mist velocity, evaporation amount, and temperature difference with the substrate, thereby determining the crystallinity of the thin film, the thickness distribution, and the thickness of the thin film. Therefore, these results can provide insights for optimizing the mist-CVD process and producing high-quality β-Ga₂O₃ thin films for various optical and electronic applications.

In this paper, the 1,700 V level SiC-based power MOSFET device widely used in electric vehicles and new energy industries was designed, that is, a single trench gate power MOSFET structure and a double trench gate power MOSFET structure were proposed to analyze electrical characteristics while changing the design and process parameters. As a result of comparing and analyzing the two structures, it can be seen that the double trench gate structure shows quite excellent characteristics according to the concentration of the drift layer, and the breakdown voltage characteristics according to the depth of the drift layer also show excellent characteristics of 200 V or more. Among them, the trench gate power MOSFET device can be applied not only to the 1,700 V class but also to a voltage range above it, and it is believed that it can replace all Si devices currently applied to electric vehicles and new energy industries.

Flexible fiber- or yarn-based one-dimensional (1-D) energy storage devices are essential for developing wearable electronics and have thus attracted considerable attention in various fields including ubiquitous healthcare (U-healthcare) systems and textile platforms. 1-D supercapacitors (SCs), in particular, are recognized as one of the most promising candidates to power wearable electronics due to their unique energy storage and high adaptability for the human body. They can be woven into textiles or effectively designed into diverse architectures for practical use in day-to-day life. This review summarizes recent important development and advances in fiber-based supercapacitors, concerning the active materials, fiber configuration, and applications. Active materials intended to enhance energy storage capability including carbon nanomaterials, metal oxides, and conductive polymers, are first discussed. With their loading methods for fiber electrodes, a summary of the four main types of fiber SCs (e.g., coil, supercoil, buckle, and hybrid structures) is then provided, followed by demonstrations of some practical applications including wearability and power supplies. Finally, the current challenges and perspectives in this field are made for future works.

In order to spread LED lighting, LED lighting technology directly driven by alternating current (AC) commercial power has recently been introduced. Since current does not flow at a voltage lower than the threshold voltage of the LED, a nonconductive section occurs in the current waveform, and the higher the threshold voltage of the LED, the more discontinuous current waveforms are generated. In this paper, multi-LED modules are connected in series so that the threshold voltage can be adjusted according to the number of LED modules. A small number of LED modules are driven at a low instantaneous rectified voltage, and a large number of LED modules are driven at a high instantaneous rectified voltage to lengthen the overall lighting time of AC-LED lighting, thereby minimizing the luminance deviation of AC-LED lighting. In addition, the load current flowing through the LED module is adjusted to be the same as the design current even at the maximum rectified voltage higher than the design voltage, so that the light brightness of the LED module is kept constant. Therefore, even if the rectified voltage applied to the LED module changes, the AC-LED lighting in which the light brightness is constant and the luminance deviation is minimal has been realized.

Nickel oxide is a nonstoichiometric transparent conductive oxide with p-type conductivity, a wide-band energy gap of 3.4~4.0 eV, and excellent chemical stability, making it a very important candidate as a material for bipolar devices.P-type conductivity in Transparent Conductive Oxides (TCO) is controlled by the oxygen vacancy concentration. During the TCO film deposition process, additional oxygen diffusing into the NiO structure causes the formation of Ni 3p ions and Ni vacancies. This eventually affects the hole concentration of the p-type oxide thin film. In this work, the surface morphology and the electrical characteristics were confirmed in accordance with the annealing atmosphere of the nickel oxide thin film.

A triboelectric nanogenerator (TENG) is a device that converts mechanical energy into electrical energy, and has been considered as a substitute for continuous power supply due to its high performance, simple structure and eco-friendliness. Recently, it is important to develop a TENG using a non-toxic material in order to use it as a power source for wearable, attachable, and body-embeddable electronics. Here, we developed a human friendly TENG using polyvinyl chloride (PVC) gel containing acetyl tributyl citrate (ATBC), a non-toxic plasticizer. PVC gels were fabricated using various ratios of PVC and ATBC, and optimized by investigating dielectric properties, surface potential, output performance, and durability. The PVC gel based TENG generates output signals of 73 V and 4.3 μA, i.e., a 5-fold enhancement in the output power compared to pristine PVC-based TENG. In addition, the PVC gel can be stretched over 500% of strain. This study is expected to be helpful in the future development of non-toxic wearable TENG.

According to the recent global warming, it is necessary to use energy efficiently together with eco-friendly energy. The development of alternative technologies is requisite for managing the current energy and climate crises. In this regard, “smart windows,” which can control solar radiation, can be used to mitigate energy demands. Electrochromic devices (ECDs) effectively control the amount of solar energy reaching commercial and other living areas and maintain climate conditions via color modulation in response to small external stimuli, such as temperature and light irradiation. However, the performance and the stability of ECDs depend on the state of the electrolyte and sealing of the device. To resolve the aforementioned issues, an ECD was manufactured by using a poly (methyl methacrylate) (PMMA)-based gel polymer electrolyte (GPE), and a laminating method was used to adequately seal the ECD. The concentrations of PMMA, acetonitrile (ACN), and ferrocene (Fc) were controlled to optimize the composition of the GPE to achieve an enhanced electrochromic performance. The fabricated GPE-based ECD afforded high optical contrast (~81.92%), with high electrochromic stability up to 10,000 cycles. Moreover, the lamination method employing the GPE could be used to fabricate large-area ECDs.

In-situ analyzation and detection of real-time chemical reactions can be a significant part in interpreting the underlying mechanism in very reactive chemical reactions. To do this, first we have designed a microfluidic device (MFD) pattern for observation of synthesis of hierarchical nanostructures based on graphene oxide (GO), conjugating the well-known coupling reaction by which the solution of 1-ethyl-3-(3-dimethylaminopropyl) carbodiimide (EDC)-mediated coupling is enhanced in the presence of n-hydroxysuccinimide (NHS) to make amide bonding, hereafter called as the EDC coupling. Then, we have manufactured microfluidic devices with multiple tens of micrometer-sized channels that can circulate those nanomaterials to be chemically reacted in the channels. These microfluidic devices were made by negative photo lithography and soft lithography. We showed the possibility of using Raman spectroscopy to reveal the basic mechanism of the energy storage applications.

We prepared carbon nanotube (CNT) paper by a vacuum filtration method for the use of a chip-typed resistor as a precision passive device with a constant resistance. Hybrid resistor composed of the CNT resistor with a negative temperature coefficient of resistance (T.C.R) and a metal alloy resistor with a positive T.C.R could lead to a constant resistance, because the resistance increase owing to the temperature increase at the metal alloy and decrease at the CNT could counterbalance each other. The constant resistance for the precision passive devices should be maintained even when a heat was generated by a current flow resulting in resistance change. Performance reliabilities of the CNT resistor for the precision passive device applications such as electrical load limit, environmental load limit, and life limit specified in IEC 60115-1 must be ensured. In this study, therefore, the rated power determination and T.C.R tests of the CNT paper were conducted. -900~-700 ppm/℃ of TCR, 0.1~0.2 A of the carrying current capacity, and 0.0625~0.125 W of the rated power limit were obtained from the CNT paper. Consequently, we confirmed that the application of CNT materials for the precision hybrid passive devices with a metal alloy could result in a better performance reliability with a zero tolerance.

The subthreshold swing (SS) of an asymmetric junctionless double gate (AJLDG) MOSFET is analyzed by the use of Gaussian function. In the asymmetric structure, the thickness of the top/bottom oxide film and the flat-band voltages of top gate (Vfbf) and bottom gate (Vfbb) could be made differently, so the change in the SS for these factors is analyzed with the projected range and standard projected deviation which are parameters for the Gaussian function. An analytical subthreshold swing model is presented from the Poisson’s equation, and it is shown that this model is in a good agreement with the numerical model. As a result, the SS changes linearly according to the geometric mean of the top and bottom oxide film thicknesses, and if the projected range is less than half of the silicon thickness, the SS decreases as the top gate oxide film is smaller. Conversely, if the projected range is bigger than a half of the silicon thickness, the SS decreases as the bottom gate oxide film is smaller. In addition, the SS decreases as Vfbb-Vfbf increases when the projected range is near the top gate, and the SS decreases as Vfbb-Vfbf decreases when the projected range is near the bottom gate. It is necessary that one should pay attention to the selection of the top/bottom oxide thickness and the gate metal in order to reduce the SS when designing an AJLDG MOSFET.

Liquid-based Triboelectric nanogenerator (L-TENG) is one of the alternatives to solid-based Triboelectric nanogenerator (S-TENG) because of the absence of surface damage which can decrease the durability of the generator. However, the L-TENG also has an obvious drawback of significantly lower output than that of S-TENG. This article produces water-sloshing-based electricity generating device (W-ED) with a new design of L-TENG that improves electrical output in portable form. The dual-electrode system, consisting of closed-loop circuit and inner electrode which enables water to contact directly in the bottle, can generate the open-circuit voltage and the short-circuit current of up to 348 V and 5.1 mA, respectively. By investigating the motion of water for each frequency, we propose that W-ED is suitable device for a variety of human motions. We expect that W-ED can be applied in small electrical devices or sensors in daily-use items.

For the last decades, a research hotspot for the halide perovskites (HPs) is now showing great progress in terms of improving efficiency for numerous photovoltaic devices (PVDs). However, it still faces challenges in the case of long-term stability in the air atmosphere. Defect-free high-quality HP single crystals show their promising properties for the remarkable development of highly efficient and stable PVDs. Here, we summarize the growth processing routes for the stable HP single crystals as well as briefly discuss the pros and cons of those well-established synthesis routes. Furthermore, we briefly include the comparison note between the HP single crystals and polycrystalline perovskite films regarding their device applications. Based on the future progress, the review concludes subjective perspectives and current challenges for the development of HPs high-quality PVDs.

IEEE Standard on Piezoelectricity has been utilized for decades though it has shown significant issues that prevent researchers from obtaining accurate materials coefficients. To resolve these issues, our research group recently proposed partial electrode (PE) method. PE method utilizes samples that consist of the center part covered with electrode, and the side part either covered or not covered with electrode for obtaining both intensive and extensive elastic parameters. In this review, we introduce our PE method, along with physical phenomenology and background, such as issues of IEEE standard, to bolster readers understanding of needs for developing new measurement method that can compensate the standard method. It is shown that development of the PE method not only provides technological benefits, but also gives scientific importance for the piezoelectric research community from its extremely high data accuracy.

Heating cables, widely used in office buildings, factories, streets and railways, deteriorate in electrical insulation during operation. The insulation deterioration of heating cables leads to electric discharges that can cause electrical fires. With this background, this paper dealt with a condition monitoring technique for heating cables by the analysis of discharge signals to prevent electrical fires. Insulation deterioration was simulated using an arc generator specified in UL1699 under AC operation, and the characteristic and propagation of discharge signals were analyzed on a 100 meter-long heating cable. Discharge signals produced by insulation deterioration were detected as a voltage pulse because they are as small as a few mV and they are attenuated through propagation path.The frequency spectrum of discharge signals mainly existed in the range from 70 kHz to 110 kHz, and the maximum attenuation of the signal was 84.8% at 100 meters away from the discharge point. Based on the experimental results, a monitoring device, which is composed of a high pass filter with the cut-off frequency of 70 kHz, a comparator, a wave shaper and a microprocessor, was designed and fabricated. Also, an algorithm was designed to discriminate the discharge signal in the presence of noise, compared with the pulse repetition period and the number of pulse counts per 100ms. In the experiment, the result showed that the prototype monitoring device could detect and discriminate the discharge signals produced at every discharge point on a heating cable.

In this study, we created a DBD plasma device and a MnO₂ catalyst mesh filter for evaluating ozone reduction of devices via the catalyst method. The DBD plasma device was manufactured by applying MnO₂ paste to soda lime glass via the screen-printing method. The MnO₂ catalyst mesh filter was manufactured by mixing MnO₂ powder with binder with a 10% difference in concentration from 10% to 50% and then applying it using the dip-coating method. Finally, we sintered a MnO₂ catalyst mesh filter in an electric furnace. We evaluated the characteristics of ozone generation according to the MnO₂ gas flow of DBD plasma devices, the opening ratio, and ozone reduction performance of the MnO₂ catalyst filters. Ozone reduction performance was approximately 20.4% at MnO₂10 wt%, 37.8% at MnO₂ 30 wt% and 50% at MnO₂ 50 wt%.

This paper focuses on the 1,200-V level reverse conducting-insulated gate bipolar transistor (RC-IGBT). The structure of the RC-IGBT has an n+ collector at the collector terminal. The breakdown voltage, V_th, V_ce-sat, and turn-off time, and the electrical characteristics of a field-stop IGBT (FS-IGBT) and RC-IGBT are compared and analyzed using simulations. Based on the results, the RC-IGBT obtained a turn-off time of 320.6 ㎲ and a breakdown voltage of 1,720 V, while the FS-IGBT obtained a turn-off time of 742.2 ㎲ and a breakdown voltage of 1,440 V. Therefore, RC-IGBTs have faster on/off transitions and a higher breakdown voltage, which can reduce the size of the element.

A power device is a component used as a switch or rectifier in power electronics to control high voltages. Consequently, power devices are used to improve the efficiency of electric-vehicle (EV) chargers, new energy generators, welders, and switched-mode power supplies (SMPS). Power device designs, which require high voltage, high efficiency, and high reliability, are typically based on MOSFET (metal-oxide-semiconductor field-effect transistor) and IGBT (insulated-gate bipolar transistor) structures. As a unipolar device, a MOSFET has the advantage of relatively fast switching and low tail current at turn-off compared to IGBT-based devices, which are built on bipolar structures. A superjunction structure adds a p-base region to allow a higher yield voltage due to lower RDS (on) and field dispersion than previous p-base components, significantly reducing the total gate charge. To verify the basic characteristics of the superjunction, we worked with a planar type MOSFET and Synopsys’ process simulation T-CAD tool. A basic structure of the superjunction MOSFET was produced and its changing electrical characteristics, tested under a number of environmental variables, were analyzed.

In this study, experiments and simulations were conducted for a 1,200-V-class trench Si insulated-gate bipolar transistor (IGBT) with a small cell pitch below 2.5 ㎛. Presently, as a power device, the 1,200-V-class trench Si IGBT is used for automotives including electric vehicles, hybrid electric vehicles, and industrial motors. We obtained a breakdown voltage of 1,440 V, threshold of 6 V, and state voltage drop of 1.75 V. This device is superior to conventional IGBTs featuring a planar gate. To derive its electrical characteristics, we extracted design and process parameters. The cell pitch was 0.95 ㎛ and total wafer thickness was 140 ㎛ with a resistivity of 60 Ω·cm. We will apply these results to achieve fine-pitch gate power devices suitable for electrical automotive industries.

In this study, we fabricated a metamorphic high-electron-mobility transistor (mHEMT) device with a T-type gate structure for the implementation of W-band monolithic microwave integrated circuits (MMICs) and investigated its characteristics. To fabricate the mHEMT device, a recess process for etching of its Schottky layer was applied before gate metal deposition, and an e-beam lithography using a triple photoresist film for the T-gate structure was employed. We measured DC and RF characteristics of the fabricated device to verify the characteristics that can be used in W-band MMIC design. The mHEMT device exhibited DC characteristics such as a drain current density of 747 mA/mm, maximum transconductance of 1.354 S/mm, and pinch-off voltage of -0.42 V. Concerning the frequency characteristics, the device showed a cutoff frequency of 215 GHz and maximum oscillation frequency of 260 GHz, which provide sufficient performance for W-band MMIC design and fabrication. In addition, active and passive modeling was performed and its accuracy was evaluated by comparing the measured results. The developed mHEMT and device models could be used for the fabrication of W-band MMICs.

Radiation noise due to EMI noise generated by the driving circuits of LED lighting devices in a medical imaging room was reduced by decreasing the noise source in the driving circuits and changing the number of corrections in EMI filters. Noise attenuation and filter changes enabled driving circuits that reduced the electromagnetic waves. Such circuits were efficiently designed by using capacitors and inverters in a given space. Therefore, the malfunction of radiation devices can be minimized by using EMI-reduction filter circuits, and reliable operation of medical devices can be expected by blocking electromagnetic waves.

This work reports the electrical characteristics of and temperature distribution in chalcogenide phase change memory (PCM) devices that have a self-aligned structure. GST (Ge-Sb-Te) chalcogenide alloy films were formed in a self-aligned manner by interdiffusion between sputter-deposited Ge and Sb2Te3 films during thermal annealing. A transmission electron microscopy-energy dispersive X-ray spectroscopy (TEM-EDS) analysis demonstrated that the local composition of the GST alloy differed significantly and that a Ge₂Sb₂Te₅ intermediate layer was formed near the Ge/Sb₂Te₃ interface. The programming current and threshold switching voltage of the PCM device were much smaller than those of a control device; this implies that a phase transition occurred only in the Ge₂Sb₂Te₅ intermediate layer and not in the entire thickness of the GST alloy. It was confirmed by computer simulation, that the localized phase transition and heat loss suppression of the GST alloy promoted a temperature rise in the PCM device.

In this paper, a single N+ emitter trench gate-type insulated gate bipolar transistor (IGBT) device was studied using T-CAD, in order to achieve a low on-state voltage drop (Vce-sat) and high breakdown voltage, which would reduce power loss and device reliability. Using the simulation, the threshold voltage, breakdown voltage, and on-state voltage drop were studied as a function of the temperature, the length of time in the diffusion process (drive-in) after implant, and the trench gate depth. During the drive-in process, a 20℃ change in temperature from 1,000 to 1,160℃ over a 150 minute time frame resulted in a 1 to 4 V change in the threshold voltage and a 24 to 2.6 V change in the on-state voltage drop. As a result, a 0.5 um change in the trench depth of 3.5 to 7.5 um resulted in the breakdown voltage decreasing from 802 to 692 V.