TiNOx multi-layer thin films on aluminum substrates were prepared by DC reactive magnetron sputtering method. 4 multi-layers of TiO2/TiNOx(LMVF)/TiNOx(HMVF)/Ti/substrate have been prepared with ratio of Ar and (N2+O2) gas mixture. TiO2 of top layer is anti-reflection layer on double TiNOx(LMVF)/TiNOx(HMVF) layers and Ti metal of infrared reflection layer. In this study, thecrystallinity and surface properties of TiNOx thin films were estimated by X-ray diffraction(XRD) and field emission scanning electron microscopy(FE-SEM), respectively. The grain size of TiNOx thin films shows to increase with increasing sputtering power. The composition of thin films has been investigated using electron probe microanalysis(EPMA). The optical properties with wavelength spectrum were recorded by UV-Vis-NIR spectrophotometry at a range of 200∼1,500 nm. The TiNOx multi-layer films show the excellent optical performance beyond 9% of reflectance in those ranges wavelength.
Niobium oxide(Nb2O5) films were deposited on p-type Si wafers at room temperature using in-line pulsed-DC magnetron sputtering system with various frequencies. The different duty ratios were obtained by varying the frequency of pulsed DC power from 100 to 300 kHz at the fixed reverse time of 1.5 μs. From the thickness of the sputtered NbOx films, it was possible to obtain much higher deposition rate in case of pulsed-DC sputtering than RF sputtering. However, the similar leakage currents and structural characteristics were obtained from the metal-insulator-semiconductor(MIS) structure fabricated with the NbOx films and the x-ray photoelectron spectroscopy(XPS) results in spite of the different deposition rates. From the experimental results, the NbOx films sputtered by pulsed-DC sputtering are expected to be used in the fabrication process instead of RF sputtering.
The Characteristics of GZOB Thin Film on O2 Plasma Treated Polymer Substrate Hyun Kyu Yu, Jong Hwan Lee, Tae Yong Lee, Won Young Hur, Kyung Chun Lee, Hyun Chang Shin, Joon Tae Song Journal of Korean Institute of Electrical and Electronic Materials Engineers.2009; 22(8): 645. CrossRef
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