Silicon carbide (SiC), with its wide bandgap and strong resistance to radiation and thermal conditions, is a promising material for ultraviolet (UV) photodetector applications under harsh environments. In this study, porous SiC thin films with thicknesses of 20, 50, and 80 nm were fabricated on 4H-SiC substrates using aerosol deposition (AD), which enables roomtemperature film formation. The device with a 50 nm-thick film exhibited the highest photoresponse under UV-C illumination (260 nm), achieving a maximum photo-to-dark current ratio (PDCR) of 205.2, a responsivity of 0.058 A/W, an external quantum efficiency (EQE) of 27.71%, and a specific detectivity (D*) of 7.9×1011 Jones. These results are attributed to an optimized balance between photon absorption and carrier transport in the porous structure. The findings confirm the potential of ADfabricated porous SiC films for highly sensitive and scalable UV photodetector applications.
Piezoelectric materials, which convert mechanical energy into electrical signals, are widely used in various industrial applications such as sensors, actuators, and energy harvesting devices. This study aims to enhance the performance of Pb(Mg1/3Nb2/3)O3-Pb(Al1/2Nb1/2)O3-Pb(Zr0.52Ti0.48)O₃ (PMN-PAN-PZT) piezoelectric ceramics by investigating the effects of varying PAN and PMN content and adding Nb₂O₅ on their piezoelectric properties. The results show that with 2 mol% of PMN and PAN, the morphotropic phase boundary (MPB) region exhibits the highest piezoelectric properties. Additionally, excess Nb₂O₅ positively influenced the piezoelectric properties, maximizing electro-mechanical coupling factor (kp=63%, d33=440 pC/N). These findings contribute to developing next-generation high-performance piezoelectric materials, with potential for improved efficiency and performance in various industries.
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Advances in poly (vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] designed for bending-energy harvesters and real-time rainfall monitoring Zhenji Zhou, Xiaoqing Guan, Hai Jiang, Weimin Xia, Shaoyun Huang Talanta.2026; 306: 129747. CrossRef
Understanding the structure-property relationship in functional materials is crucial as microstructural features such as nano-precipitates, phase boundary, grain boundary segregation, and grain boundary phases play a key role in their functional properties. Atom probe tomography (APT) is an advanced analytical technique that allows for the three-dimensional (3D) mapping of atomic distributions and the precise determination of local chemical compositions in materials. Moreover, it offers sub-nanometer spatial resolution and chemical sensitivity at the tens of parts per million (ppm) level. Owing to its unique capabilities, this technique has been employed to uncover the 3D elemental distributions in a wide range of materials, including alloys, semiconductors, nanomaterials, and even biomaterials. In this paper, various kinds of examples are introduced for elucidating structure-property relationships on functional materials by utilizing the atom probe tomography.
In line with the development of electronic devices and technologies, the demand for improving ferroelectric materials’ performance is increasing. Since K0.5Na0.5NbO3 (KNN), an eco-friendly ferroelectric material that does not use lead and has a high Curie temperature, it is attracting attention to its usability as a high-temperature dielectric, and various studies are being conducted to increase performance. In a KNN having a perovskite structure, there was a simulation result that the KNN has higher spontaneous polarization when the A-site in which sodium ions exist is replaced with lithium ions. If the simulation results can be proven experimentally, the application range of KNN-based ferroelectric materials will increase. To this end, we tried to manufacture a K1-xLixNbO3 (KLN) with high electrical characteristics by fabricating niobium-deficient and potassium-excessive compositions, which attempt was made to solve the stoichiometry problem by volatilization and suppress secondary phases. If KLN’s secondary phase suppression and relative permittivity improvement are successful, it will contribute to meeting the demand for developing electronic devices.
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Recent Progress in Relaxor-State Design of BNT-Based Ceramics for High-Efficiency Energy-Storage Capacitors Yeseul Lim, Geon-Tae Hwang Journal of Electrical and Electronic Materials.2026; 39(3): 225. CrossRef
Lithium-ion batteries (LIBs) have attracted great attention as the common power source in energy storage fields of large-scale applications such as electrical vehicles (EVs), industries, power plants, and grid-scale energy storage systems (ESSs). Insertion, alloying, and conversion reactions are the main electrochemical energy storage mechanisms in LIBs, which determine their electrochemical properties and performances. The electrochemical reaction mechanisms are determined by several factors including crystal structure, components, and composition of electrode materials. This article reviews a new strategy to compensate for the intrinsic shortcomings of each reaction mechanism by introducing the material systems to form a single compound with different types of reaction mechanisms and to allow the simultaneous hybrid electrochemical reaction of two different mechanisms in a single solid solution phase.
Recently, as interest in personal hygiene has increased due to the community spread of COVID-19 and variant viruses, fixed and potable UV germicidal equipment to sterilize indoor spaces and hand-held UV germicidal equipment to sterilize household items such as masks and mobile phones are continuously being developed and sold. However, the development and sales of the product are difficult because appropriate testing methods have not yet been established. In this situation, if an uncertified product is distributed in the market, it can cause serious harm to consumers. In this study, we investigate the photobiological risks and safety devices against UV exposure of UV germicidal equipment distributed domestically, and propose appropriate test methods for portable UV germicidal equipment based on the research results.
In this study, an induction heating system using resonance is developed to remove remaining moisture and contaminations which could be generated during fabricating secondary batteries. This system is composed of power supply and induction coil. Power supply needs an oscillator, zero crossing detection, frequency tracking function, and induction coil needs a dummy coil to obtain a uniform temperature distribution. It is very important to obtain a uniform heating temperature distribution of battery cell case in the induction heating system before pouring electrolyte into battery cell. Experimental results show a temperature distribution deviation of below 1℃ in the external position of battery cell cases. As well, the temperature of battery cell itself shows distribution of 40℃±3℃.
Morphotropic phase boundary (MPB), which is a special boundary that separates two or multiple different phases in the phase diagram of some ferroelectric ceramics, is an important concept in identifying physics that includes piezoelectric responses. MPB, which had not been discovered in organic materials until recently, was discovered in poly(vinylidene fluoride-co- trifluoroethylene (P(VDF-TrFE)), resulting from a molecular approach. The piezoelectric coefficient of P(VDF-TrFE) in this MPB region was achieved up to -63.5 pC N-1, which is about two times as large as the conventional value of -30 pC N-1 of P(VDF-TrFE). An order-disorder arrangement greatly affects the rise of the piezoelectric effect and the ferroelectric, paraelectric and relaxor ferroelectric of P(VDF-TrFE), so the arrangement and shape of the polymer chain is important. In this review, we investigate the origin of negative longitudinal piezoelectric coefficients of piezoelectric polymers, which is definitely opposite to those of common piezoelectric ceramics. In addition to the mainly discussed issue about MPB behaviors of ferroelectric polymers, we also introduce the consideration about polymer chirality resulting in relaxor ferroelectric properties. When the physics of ferroelectric polymers is unveiled, we can improve the piezoelectric and pyroelectric properties of ferroelectric polymers and contribute to the development of next-generation sensor, energy, transducer and actuator applications.
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Wearable Multifunctional Bilayer Nanofiber Films for Human Motion Energy Harvesting and Photothermal Therapy Shaowei Shen, Haoyi Wu, Zihan Xu, Ruirui Cao, Ying Liu, Yangjiu Zhao, Xin Li, Haoran Yu, Chong Chen, Xinya Wang, Caofeng Pan Advanced Functional Materials.2025;[Epub] CrossRef
Intrinsic Elastomer with Remarkable Dielectric Constant via Elastification of Relaxor Ferroelectric Polymer Tianhua Xu, Linping Wang, Liang Gao, Fangzhou Li, Bing Hu, Bowen Li, Haoyu Shen, Zhiwen Liu, Ben‐Lin Hu Advanced Materials.2024;[Epub] CrossRef
The subthreshold swing (SS) of an asymmetric junctionless double gate (AJLDG) MOSFET is analyzed by the use of Gaussian function. In the asymmetric structure, the thickness of the top/bottom oxide film and the flat-band voltages of top gate (Vfbf) and bottom gate (Vfbb) could be made differently, so the change in the SS for these factors is analyzed with the projected range and standard projected deviation which are parameters for the Gaussian function. An analytical subthreshold swing model is presented from the Poisson’s equation, and it is shown that this model is in a good agreement with the numerical model. As a result, the SS changes linearly according to the geometric mean of the top and bottom oxide film thicknesses, and if the projected range is less than half of the silicon thickness, the SS decreases as the top gate oxide film is smaller. Conversely, if the projected range is bigger than a half of the silicon thickness, the SS decreases as the bottom gate oxide film is smaller. In addition, the SS decreases as Vfbb-Vfbf increases when the projected range is near the top gate, and the SS decreases as Vfbb-Vfbf decreases when the projected range is near the bottom gate. It is necessary that one should pay attention to the selection of the top/bottom oxide thickness and the gate metal in order to reduce the SS when designing an AJLDG MOSFET.
This study tested the electrical, structural, and thermal safety of LED lighting products, available on the market. Five recessed LED systems, 20 W each, and five fixed LED systems, 25 W each, were selected. Dielectric strength tests, live part electric shock protection tests, and thermal tests were conducted on the LEDs. These were key tests for user safety, according to the specification of the safety criteria for electric products, KC 60598-1, South Korea. In addition, the wiring temperature of UL1007, 60227 IEC 08, and UTP cables, was measured. The results of the study gave an in-depth examination of the safety of LED lighting systems for users.
Grain boundaries play a major role in determining device performance, particularly of polysilicon-based photodetectors. Through the post-annealing of as-deposited polysilicon and then, the analysis of electric behavior for a metal-polysilicon-metal (MSM) photodetector, we were able to identify the influence of grain boundaries. A modified model of polysilicon grain boundaries in the MSM structure is presented, which uses a crystalline-interfacial layer-SiOx layer- interfacial layer-crystalline system that is similar to the Si-SiO2 system in MOS device. Hydrogen passivation was achieved through a hydrogen ion implantation process and was used to passivate the defects at both interfacial layers. The thin SiOx layer at the grain boundary can enhance the photosensitivity of an MSM photodetector by decreasing the dark current and increasing the light absorption.
In this study, the sterilization property of E. coli was established using a plasma generator with a flexible electrode structure. The bacterial suspension was prepared based on the McFarland standard 0.50 (1.5×108 CFU/mL) concentration and a specific amount was inoculated on the plate medium. After the plasma was discharged 3 cm away from the plasma generator in the range of 30s to 5 min and the results compared to the control group, the observed colonies that were formed decreased significantly as the plasma discharge time increased.
In this study, we investigated the crystal defects and grain boundary properties in a ZZCCC (ZnO-Zn2BiVO6-Co3O4-Cr2O3-CaCO3) varistor, with the liquid-phase sintering aid Zn2BiVO6 developed by our laboratory. The ZZCCC varistor sintered at 1,200℃ exhibited excellent nonlinear current-voltage characteristics (α=63), with oxygen vacancy (V0·; 0.35 eV) as a main defect, and an apparent activation energy of 1.1 eV with an electrically single grain boundary. Therefore, among the various additives to improve the electrical properties of ZnO varistors, if Zn2BiVO6 is used as a liquid phase sintering aid, it will be ideal to use Co for the oxygen vacancy and Ca for the electrically single grain boundary. This will allow the good properties of ZnO varistors to be maintained up to high sintering temperatures.
High-capacity secondary batteries can cause explosion hazards owing to microcurrent variations or current surges that occur in short circuits. Consequently, complete safety cannot be achieved with general protection that is limited to a mere current fuse. Hence, in the case of secondary batteries, it is necessary for the protector to limit the inrush current in a short circuit, and to detect the current during microcurrent variations. To serve this purpose, a fuse can be employed for the secondary battery protection circuit with current detection. This study aims at designing a protection device that can stably operate in the hazardous circumstances associated with high-capacity secondary batteries. To achieve the said objective , a detecting fuse was designed from an alloy of low melting point elements for securing stability in abnormal current states. Experimental results show that the operating I-T and V-T characteristic constraints can be satisfied by employing the proposed current detecting self-contained low melting point fuse, and through the resistance of the heating resistor. These results thus verify that the proposed protection device can prevent the hazards of short circuit current surges and microcurrent variations of secondary batteries.
Liquid phases in ZnO varistors cause more complex phase development and microstructure, which makes the control of electrical properties and reliability more difficult. Therefore, we have investigated 2 mol% CaCO3 doped ZnO-Co3O4-Cr2O3-La2O3 (ZCCLCa) bulk ceramics as one of the compositions without liquid phase sintering additive. The results were as follows: when CaCO3 is added to ZCCLCa (644 Ωcm) acting as a simple ohmic resistor, CaO does not form a secondary phase with ZnO but is mostly distributed in the grain boundary and has excellent varistor characteristics (high nonlinear coefficient α＝78, low leakage current of 0.06 μA/㎠, and high insulation resistance of 1×1011 Ωcm). The main defects Zni·· (AS: 0.16 eV, IS & MS: 0.20 eV) and V˙o (AS: 0.29 eV, IS & MS: 0.37 eV) were found, and the grain boundaries had 1.1 eV with electrically single grain boundary. The resistance of each defect and grain boundary decreases exponentially with increasing the measurement temperature. However, the capacitance (0.2 nF) of the grain boundary was ~1/10 lower than that of the two defects (~3.8 nF, ~2.2 nF) and showed a tendency to decrease as the measurement temperature increased. Therefore, ZCCLCa varistors have high sintering temperature of 1,200℃ due to lack of liquid phase additives, but excellent varistor characteristics are exhibited, which means ZCCLCa is a good candidate for realizing chip type or disc type commercial varistor products with excellent performance.
Herein, for the quantitative analysis of the arc beads related to electric fire, we used electron backscatter diffraction (EBSD), a measuring device for grain orientation of materials, we compared and analyzed the surface texture of primary and secondary beads according to the difference in cooling rate at ambient temperature. This analysis revealed that the primary beads showed similar distribution at both low and high angles, while the secondary beads showed a higher distribution at low angles than at high angles. Thus, EBSD can be used for quantitative analysis of the beads and can be applied to identify beads in the future.
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Reassessment of the Validity of Primary Arc Bead Generation Methods: Ignition Experiments and EBSD Analysis Kwangmuk Park, Jeong-Hwan Kim, Chiwoo Choi, DaeRyeong Baek, Jeongchay Jeon Fire.2026; 9(10): 461. CrossRef
A polysilicon-based metal-semiconductor-metal (MSM) photodetector was fabricated by means of our new methods. Its photoresponse characteristics were analyzed to see if it could be applied to a sensor system. The processes on which this study focused were an alloy-annealing process to form metal-polysilicon contacts, a post-annealing process for better light absorption of as-deposited polysilicon, and a passivation process for lowering defect density in polysilicon. When the alloy annealing was achieved at about 400℃, metal-polysilicon Schottky contacts sustained a stable potential barrier, decreasing the dark current. For better surface morphology of polysilicon, rapid thermal annealing (RTA) or furnace annealing at around 900℃ was suitable as a post-annealing process, because it supplied polysilicon layers with a smoother surface and a proper grain size for photon absorption. For the passivation of defects in polysilicon, hydrogen-ion implantation was chosen, because it is easy to implant hydrogen into the polysilicon. MSM photodetectors based on the suggested processes showed a higher sensitivity for photocurrent detection and a stable Schottky contact barrier to lower the dark current and are therefore applicable to sensor systems.
It is highly important issue to use an energy efficiently for sustainable prosperity of mankind. From this point of view, using LED lighting can be a good alternative because it has a lot of advantages such as high efficiency, long life time and eco-friendly manufacturing process. That is the reason why using LED lighting has been encouraged worldwide. However, in situations that LED lighting is replacing traditional lighting quickly, the problem of the flicker of LED lighting has emerged as an important issue. Therefore, in foreign countries like US or Japan in order to ensure the reliability of LED lighting, study for flickering effects of the human body and test methods are have been actively conducted. But related research in domestic situation is an insufficient condition. In this study, a flicker characteristic was measured conventional lamps such as incandescent lamps or fluorescent lamp and 81 items of LED lightings which are distributed in domestic markets.
In this paper, the IES file was measured by applying a secondary optical lens to a 21 W LED engine, and the lighting calculation software RELUX was used to perform simulations with the data file of this measurement. For two-lane (two way) concrete paved roads, six LED engine are applied to each streetlight and simulation results show that Uo (uniformity) 0.56, UI (longitudinal uniformity) 0.86 and TI (threshold iIncrement) 9% which satisfies the required standards. RELUX was also used to LED streetlights by designing them in three dimensions, that is ±25% of the arm length of 2.8 m standardized by the road lighting standards of the Korea Expressway Corporation. Comparative analysis was carried out on adjustments were made in increments of 0.1 m that Uo, UI, and TI values in the range of arm lengths from 2.1 m∼3.5 m. For the arm length range of 2.1 m∼2.4 m, Uo was high, whereas UI was low. Therefore, we present the optimal light distribution values designed for an arm length of 2.5 m.
The wind power generation is an eco-friendly clean energy that produces almost zero CO2emission, and has a good economic feasibility. As for the location, the installation of large turbines and construction of large-scale wind farm is easier on the offshore than on the land. In Korea, it is inevitable to generate offshore wind power through the offshore wind farm, and the radio interference of larger wind power generators and offshore wind power farm to broadcasting, communication and radars is becoming a core issue for constructing the offshore wind farm. In this study, the wind power generation status and rotor blade technology trend were presented, along with the technical trend of radar radio interference reduction relating to construction of the offshore wind farm.
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A Review on Marine Environmental Impact Assessment for Offshore Wind Farm: Status, Issue, and Future Direction Changkeun Lee, Junsung Noh, Bong-Oh Kwon, Jong Seong Khim Journal of the Korean Society for Marine Environment & Energy.2021; 24(4): 201. CrossRef
Optimal Micrositing and Annual Energy Production Prediction for Wind Farm Using Long-term Wind Speed Correlation Between AWS and MERRA Mi Ho Park, Bum Suk Kim Transactions of the Korean Society of Mechanical Engineers B.2016; 40(4): 201. CrossRef
This paper carried out the comparative analysis on ground impedance of a carbon block and a copper rod. Two types of grounding electrode were compared; a carbon block (L: 1 m, ф : 245 mm)buried at depth of 0.8m and a three-linked copper rod (L : 1 m, : ф : 10 mm) of equilateral triangles with 1 m spacing. Ground impedance depending on applied current was evaluated by the application of a sine wave current with 60 Hz~3.5 MHz, fast-rise pulse with rising time of 200 ns, a standard lightning impulse of 8/20 ㎲ and a 600 Hz square wave. Ground impedance for both electrodes were almost the value below 100 KHz, and increased rapidly afterwards. The maximum ground impedance appeared 400 Ω at around 1.5 MHz. Ground impedance of the block was lower at the square wave and was higher at fast-rise pulse that of the copper rod. Also, impedance as ages showed no difference for the 8 months. From the results, it is likely that ground performance for both electrodes shows no difference against commercial frequency and lighting impulse current, while the copper rod shows better performance against fast-rise pulse with rise-time of a few hundred ns.
In this study, we have investigated the effects of Mn and Co co-doping on defects, J-E curves and grain boundary characteristics of ZnO-Bi2O3 (ZB) varistor. Admittance spectra and dielectric functions show two bulk defects of Zn ·· (0.17∼0.18 eV) and V· (0.30∼0.33 eV). From J-E characteristics the nonlinear coefficient (α) and resistivity (ρgb) of pre-breakdown region decreased as 30 to 24 and 5.1 to 0.08 GΩcm with sintering temperature, respectively. The double Schottky barrier of grain boundaries in ZB(MCo) (ZnO-Bi2O3-Mn3O4-Co3O4) could be electrochemically single type. However, its thermal stability was slightly disturbed by ambient oxygen because the apparent activation energy of grain boundaries was changed from 0.64 eV at lower temperature to 1.06 eV at higher temperature. It was revealed that a co-doping of Mn and Co in ZB reduced the heterogeneity of the barrier in grain boundaries and stabilized the barrier against an ambient temperature (α-factor= 0.136).
In this study, we investigated the effects of Mn dopant (0.1∼3.0 at% Mn3O4 sintered at 100 0℃ for 1 h in air) on the bulk trap (i.e. defect) and grain boundary properties of ZnO, ZM(0.1∼3.0) using admittance spectroscopy (AS), and impedance-modulus spectroscopy (IS & MS). As a result, three kinds of defect were found below the conduction band edge of ZnO as 0.09∼0.14 eV (attractive coulombic center), 0.22∼25 eV (Zn¨(i)), and 0.32∼0.33 eV (V`o). The oxygen vacancy increased with Mn doping. In ZM, an electrically single grain boundary as double Schottky barrier was formed with 0.82∼1.0 eV of activation energies by IS & MS. We also find out that the barriers of grain boundary of Mn-doped ZnO (α-factor=0.13) were more stabilized and homogenized with temperature compared to pure ZnO.
In this paper, we investigated an anomalous hump phenomenon under the positive bias stress in p-type LTPS TFTs. The devices with inferior electrical performance also show larger hump phenomenon. which can be explained by the sub-channel induced from trapped electrons under thinner gate oxide region. We can confirm that the devices with larger hump have larger interface trap density (Dit) and grain boundary trap density (Ntrap) extracted by low-high frequency capacitance method and Levinson-Proano method, respectively. From the C-V with I-V transfer characteristics, the trapped electrons causing hump seem to be generated particularly from the S/D and gate overlapped region. Based on these analysis, the major cause of an anomalous hump phenomenon under the positive bias stress in p-type poly-Si TFTs is explained by the GIDL occurring in the S/D and gate overlapped region and the traps existing in the channel edge region where the gate oxide becomes thinner, which can be inferred by the fact that the magnitude of the hump is dependent on the average trap densities.
The (Na0.52K0.44)(Nb0.9Sb0.06)O3-0.04dLiTaO3 (NKNS-LT) ceramics with various Cu2O concentration were prepared by the conventional solid state reaction method. The Cu2O content was varied in the range of 0.1~0.4 wt%. The effects of Cu on microstructure, crystallographic phase transition, and piezoelectric properties were investigated. The material with perovskite structure had a tetragonal phase (T1) when Cu2O concentration was less than 0.3 wt% and it transformed to another tetragonal phase (T2) when the Cu2O amount was greater than 0.3 wt%. The phase boundary between T1 and T2 phases appeared at around 0.3 wt% of Cu2O concentration. The piezoelectric properties were shown the maximum values at the composition of the phase boundary. The electro-mechanical coupling factor (kp) was 0.42 and the piezoelectric charge constant (d33) was 245 pC/N at the 0.3 wt% of Cu2O concentration.
The conducting current of non-uniform plasma immersed electrode consists of ion current and secondary electron emission current caused by the impinging ion current. The ion current is determined by the ion dose passing through the sheath in front of electrode and the ion distribution in front of the electrode plays an important role in the secondary electron emission. The investigation of the distributed plasma and secondary electron effect on electrode ion current was carried out as the stainless steel electrode plugged with quartz tube was immersed in the inductively coupled Ar plasma using the antenna powered by 1 kw and the density profile was measured. After that, the negative voltage was applied by 1 kV∼6 kV to measure the conduction current for the analysis of ion current.
Poly Si TFTs (poly silicon thin film transistors) with p channel those are annealed HT (high t emperature) with gate poly crystalline silicon and LT (low temperature) with metal gate electrode were fabricated on quartz substrate using the analyzed data and compared according to the activated grade silicon thin films and the size of device channel. The electrical characteristics of HT poly-Si TFTs increased those are the on current, electron mobility and decrease threshold voltage by the quality of particles of active thin films annealed at high temperature. But the on/off current ratio reduced by increase of the off current depend on the hot carrier applied to high gate voltage. Even though the size of the particles annealed at low temperature are bigger than HT poly-Si TFTs due to defect in the activated grade poly crystal silicon and the grain boundary, the characteristics of LT poly-Si TFTs were investigated deterioration phenomena those are decrease the electric off current, electron mobility and increase threshold voltage. The results of transconductance show that slope depend on the quality of particles and the amplitude depend on the size of the active silicon particles.
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