In this study, we investigate the SiO₂ current blocking layer (CBL) to improve light output power efficiency in nonpolar a-plane (11-20) GaN LEDs on a r-plane sapphire substrate. The SiO₂ CBL was produced under the p-pad layer using plasma enhanced chemical vapor deposition (PECVD). The results show that nonpolar GaN LED light output power with the SiO₂ CBL is considerably enhanced compared without the SiO₂ CBL. This can be attributed to reduced light absorption at the p-pad due to current blocking to the active layer by the SiO₂ CBL.