In this study, we investigate the SiO2 current blocking layer (CBL) to improve light output power efficiency in nonpolar a-plane (11-20) GaN LEDs on a r-plane sapphire substrate. The SiO2 CBL was produced under the p-pad layer using plasma enhanced chemical vapor deposition (PECVD). The results show that nonpolar GaN LED light output power with the SiO2 CBL is considerably enhanced compared without the SiO2 CBL. This can be attributed to reduced light absorption at the p-pad due to current blocking to the active layer by the SiO2 CBL.
