Organic solar cells based on bulk heterojunction (BHJ) structures have attracted considerable attention because of their low fabrication cost, mechanical flexibility, and compatibility with solution-processing techniques. In BHJ organic photovoltaic devices, nanoscale morphology and crystallinity of the photoactive layer critically influence photovoltaic performance. In this study, the effects of solvent selection and thermal annealing on crystallization evolution and photovoltaic characteristics of P3HT:PCBM organic solar cells were systematically investigated. Three different solvents, including toluene, chlorobenzene (CB), and dichlorobenzene (DCB), were employed for active-layer fabrication, followed by post-thermal annealing treatment. UV–visible absorption spectroscopy revealed solvent-dependent differences in molecular ordering and intermolecular π–π interactions within the active layer. X-ray diffraction analysis confirmed that thermal annealing significantly enhanced crystallinity and lamellar ordering of P3HT domains, particularly for CB-processed films. Electrical characterization demonstrated that solvent evaporation behavior strongly affects photovoltaic performance. Among the investigated devices, the thermally annealed CB-processed device exhibited the highest power conversion efficiency of 1.83% with an enhanced short-circuit current density of 7.057 mA cm⁻². The improved device performance is attributed to optimized crystallization behavior and balanced nanoscale phase separation induced by the moderate evaporation characteristics of CB. In contrast, although DCB-assisted films exhibited relatively strong optical absorption and enhanced crystallinity, excessively slow solvent evaporation likely induced excessive aggregation and coarse phase separation, limiting efficient photovoltaic characteristics. These results demonstrate that solvent engineering combined with thermal annealing is an effective strategy for controlling morphology evolution and crystallization behavior in P3HT:PCBM bulk heterojunction solar cells.

This study examined the crystallinity and potential of BaTiO₃ powder, prepared by hydrothermal synthesis at 60 nm, as a dielectric material for automotive MLCCs under varying heat treatment temperatures. At temperatures above 850℃, the powder exhibited an orthorhombic structure, with crystallinity and particle size increasing as the temperature rose. In the range of 850~900℃, the powder displayed a uniform particle size distribution and minimal agglomeration, with particles ranging between 150~200 nm. Additionally, it was confirmed that the heat treatment temperature significantly impacts the properties of BaTiO₃ powder, which are critical for the dielectric performance required in X7R MLCCs used in automotive applications. Specifically, high-temperature treatment (above 850℃) was essential for enhancing the powder's crystallinity and forming a stable core-shell structure, which is crucial for achieving stable TCC (Temperature Coefficient of Capacitance) characteristics. It was confirmed that increased crystallinity at temperatures above 850℃ facilitated the development of the core-shell structure through interactions with additives, thereby achieving the necessary characteristics required for highly reliable automotive MLCCs.

In the case of ZnO:Al thin films, it is the best material that can replace ITO that is mainly used as a transparent electrode in electronic devices such as solar cells and flat-panel displays. In this study, ZnO:Al films were fabricated by using the RF dual magnetron sputtering method at various substrate temperatures. As the substrate temperature increased, the crystallinity of the ZnO:Al thin films was improved, and the electrical conductivity and electrical properties of the thin film improved owing to the increase in grain size. In addition, the surface roughness of the ZnO:Al thin films increased due to changes in the surface and density of the thin films. Moreover, the substrate temperature increased the density of thin films and improved their transmittance. To be applied to solar cells and other several electronic devices in the future, the hardness and adhesion properties of the thin film improve as the substrate temperature increases.

In this research, we prepared Ga doped zinc oxide(ZnO:Ga, GZO) targets each difference sintering temperature 700℃, 800℃, and doping rate 1 wt.%, 2 wt.%, 3 wt.%. The characteristics of thin film on glass substrates which deposited by facing target sputtering in pure Ar atmosphere are reported. Ga doped zinc oxide film is attracted material through low resistivity, high transmittance, etc. When prepared target powder`s structure was investigated by scanning electron microscope, densification and coarsening by driving force was observed. For each ZnO:Ga films with a Ga2O3 content of 3 wt.% at input power of 45 W, the lowest resistivity of 9.967×10(-4) Ω·cm (700℃) and 9.846×10(-4) Ω ·cm (800℃) was obtained. the carrier concentration and mobility were 4.09 × 10(20) cm-3(700℃), 4.12×10(20) cm-3(800℃) and 15.31 cm2/V·s(700℃), 12.51 cm2/V·s(800℃), respectively. And except 1 wt.% Ga doped ZnO thin film, average transmittance of these samples in the range 350-800 nm was over 80%.