Skip to main navigation Skip to main content
  • KIEEME

J Electr Electron Mater : Journal of Electrical and Electronic Materials

OPEN ACCESS
ABOUT
BROWSE ARTICLES
EDITORIAL POLICIES
FOR CONTRIBUTORS

Page Path

1
results for

"Constant current intensity. Constant current intensity convertible"

Keywords

Publication year

Authors

"Constant current intensity. Constant current intensity convertible"

Display and Optical Devices : Fabrication of Current Intensity Convertible CLD of Large Current Intensity for LED Network Application
Hwa Jin Park, S J Yu, K Anil, Yong Gon Yi, J H Kim, T S Han
J Korean Inst Electr Electron Mater Eng 2012;25(9):723-726.   Published online September 1, 2012
DOI: https://doi.org/10.4313/JKEM.2012.25.9.723
A current intensity convertible CLD chip was fabricated using small and large FET cell configuration. Pinch off current of 8.82mA and 11.56mA were obtained for small and large cell in the CED chip, respectively. Constant current was fairly maintained until the breakdown voltage of 60 V, Measured knee voltage, Vk were 3.8 V and 4.5 V for small and large cell, respectively. We configured current amplifying chip with parallel connection of each cells, by connecting 8 individual large cells in parallel network, 92.0mA of current was obtained. The pinch off constant current of CLD chip was varied very linearly with respect to the number of parallel connected cell.
  • 49 View
  • 0 Download