Eu³⁺-doped BaZrO₃ (BaZrO₃:Eu³⁺+) phosphor powders were prepared using a solid-state reaction by changing the molar concentration of Eu³⁺ within the range of 0.5 to 30 mol%. Irrespective of the molar concentration of Eu³⁺ ions, the crystal structures of all the phosphors were cubic. The excitation spectra of BaZrO₃:Eu³⁺+ phosphors consisted of an intense broad band centered at 277 nm in the range of 230~320 nm. The emission spectra were composed of a dominant orange band at 595 nm arising from the 5D0→7F1 magnetic dipole transition of Eu³⁺ and two weak emission bands centered at 574 and 615 nm, respectively. As the concentration of Eu³⁺ increased from 0.5 to 10 mol%, the intensities of all the emission bands gradually increased, approached maxima at 10 mol% of Eu³⁺ ions, and then showed a decreasing tendency with further increase in the Eu3+ ions due to the concentration quenching. The critical distance between neighboring Eu³⁺ ions for concentration quenching was calculated to be 11.21 Å, indicating that dipole-dipole interaction was the main mechanism of concentration quenching of BaZrO₃:Eu³⁺+ phosphors. The results suggest that the orange emission intensity can be modulated by doping the appropriate concentration of Eu³⁺ ions.

Recently, the application of atmospheric plasma technology in air filtration is increasing. Sterilization by an atmospheric plasma device is very effective. However, ozone gas, which is generated during atmospheric plasma formation, poses a hazard to human health. To reduce the ozone gas during plasma discharge, we fabricated a one-plate hybrid plasma discharge device with a heating element, which can decompose ozone gas effectively by a simple heating action. In this study, we evaluated the plasma discharge characteristics and ozone concentrations with various Ar flow rates and temperatures. With increasing Ar gas flow rate, the ozone concentration and spectrum intensity increased till an Ar gas flow rate of 60 sccm, and decreased thereafter. When discharged in high temperature, the ozone concentration and spectrum intensity decreased. Further, to evaluate the state of the treated surface under various plasma discharge and heating conditions, we measured the variation in the contact angles on the surface. Regardless of the temperature, the contact angle increased with increasing discharge voltage. However, the contact angle increased when discharged at high temperature.

In particular, gas sensors require characteristics such as high speed, sensitivity, and selectivity. In this study, we fabricated a NO_X gas sensor by using a multi-walled carbon nanotube (MWCNT)/zinc oxide (ZnO) composite film. The fabricated MWCNT/ZnO gas sensor was then treated by a 450℃ temperature process to increase its detection sensitivity for NOx gas. We compared the detection characteristics of a ZnO film gas sensor, MWCNT film gas sensor, and the MWCNT/ZnO composited film gas sensor with and without the heat-treatment process. The fabricated gas sensors were used to detect NO_X gas at different concentrations. The gas sensor absorbed NO_X gas molecules, exhibiting increased sensitivity. The sensitivity of the gas sensor was increased by increasing the gas concentration. Additionally, while changing the temperature inside the chamber for the MWCNT/ZnO composite film gas sensor, we obtained its sensitivity for detecting NO_X gas. Compared with ZnO, the MWCNT film gas sensor is excellent for detecting NO_X gas. From the experimental results, we confirmed the enhanced gas sensor sensing mechanism. The increased effect by electronic interaction between the MWCNT and ZnO films contributes to the improved sensor performance.

Herein we studied the electrical and optical properties of indium tin oxide ITO/Ag/ITO multilayer thin films for application in transparent conducting electrodes. The ITO and Ag thin films were deposited onto soda lime glass (SLG) using radiofrequency and DC-sputtering methods, respectively. The as-synthesized ITO/Ag/ITO multilayer thin films were analyzed using 4-point probe, UV-Visible spectroscopy, and Hall measurement. We observed a rapid increase in electron concentration with increasing Ag thickness. However, electron mobility decreased with increasing Ag thickness. Finally, ITO/Ag/ITO multilayer thin films showed a characteristic low sheet resistance of 18 Ω/sq and high optical transmittance value (80%) with variation of Ag thickness (5~10 nm).

The advancement and diversification of urban functions has caused an increasing need to improve the reliability of power supplies. The diversification of urban areas causes social disruptions by paralyzing urban functions during power outages. A large power outage occurs in the event of an accident, owing to the subduction of distribution lines. Therefore, in recent years, for the sake of the environment and safety, the safety diagnosis of electric power facilities has become an important issue. In this system, because thermal information changes rapidly during unattended monitoring owing to heat concentration phenomenon due to abnormal load or deterioration, studies have been conducted on the development of a device that can notify the manager at all times.

In this work, static characteristics of 4H-SiC SJ-ACCUFETs were obtained by adjusting the p-pillar region. The structure of this SJ-ACCUFET was designed by using a two-dimensional simulator. The static characteristics of SJ-ACCUFET, such as the breakdown voltages, on-resistance, and figure of merits, were obtained by varying the p-pillar doping concentration from 1×10¹⁵ cm^-3 to 5×10¹⁶ cm^-3 and the thickness from 0 μm to 9 μm. The doping concentration and the thickness of p-pillar region are closely related to the break down voltage and on-resistance and threshold voltages. Hence a silicon carbide SJ-ACCUFET structure with highly intensified breakdown voltages and low on-resistances with good figure of merits can be achieved by optimizing the p-pillar thickness and doping concentration.

The conduction behavior and electron concentration change in a-IGZO thin-films according to the RTA (rapid thermal annealing) were studied. The electrical characteristics of TFTs (thin-film-transistors) annealed by different temperatures were measured. The sheet resistance, electron concentration, and oxygen vacancy of a-IGZO film were measured by the four-point-probe-measurement, hall-effect-measurement, and XPS analysis. The RTA process increased the driving current of IGZO TFTs but the VTH shifted to the negative direction at the same time. When the RTA temperature is higher than 250℃, the leakage current at off-state increased significantly. This is attributed to the increase of oxygen vacancy resulting in the increase of electron concentration. We demonstrate that the RTA is a promising process to adjust the VTH of TFT because the RTA process can easily modify the electron concentration and control the conductivity of IGZO film with short process time.

We have fabricated white organic light-emitting diodes (OLEDs) by co-doping of red and blue phosphorescent guest emitters into the single host layer. Tris(2-phenyl-1-quinoline) iridium(III) [Ir(phq)3]and iridium(III)bis[(4,6-di-fluorophenyl)-pyridinato-N,C2`]picolinate (FIrpic) were used as red and blue dopants, respectively. The effects of dopant concentration on the emission, carrier conduction and external quantum efficiency characteristics of the devices were investigated. The emissions on the guest emitters were attributed to the energy transfer to the guest emitters and direct excitation by trapping of the carriers on the guest molecules. The white OLED with 5% FIrpic and 2% Ir(phq)3 exhibited a maximum external quantum efficiency of 19.9% and a maximum current efficiency of 45.2 cd/A.

Carbon nanotubes(CNT) has strength and chemical stability, greatly conductivity characteristics. In particular, MWCNT (multi-walled carbon nanotubes) show rapidly resistance sensitive for changes in the ambient gas, and therefore they are ideal materials to gas sensor. So, we fabricated NOx gas sensors structured MOS-FET using MWCNT (multi-walled carbon nanotubes) material. We investigate the change resistance of NOx gas sensors based on MOS-FET with ultra lean NOx gas concentrations absorption. And NOx gas sensors show sensitivity on the change of gate-source voltage (V98 =0[V] or V98=3.5[V]). The gas sensors show the increase of sensitivity with increasing the temperature (largest value at 40℃). On the other hand, the sensitivity of sensors decreased with increasing of NOx gas concentration. In addition, We obtained the adsorption energy(Ua), Ua = 0.06714[eV] at the NOx gas concentration of 8[ppm], Ua = 0.06769[eV] at 16[ppm], Ua = 0.06847[eV] at 24[ppm] and Ua = 0.06842[eV] at 32[ppm], of NOx gas molecules concentration on the MWCNT gas sensors surface with using the Arrhenius plots. As a result, the saturation phenomena is occurred by NOx gas injection of concentration for 32[ppm].

ZnO nanowires were synthesized by hydrothermal technique. Prepared synthesis aqueous solutions were preserved by preheating in autoclave type synthesis equipment with various preheating time of 1 h difference. ITO-coated corning glass substrates deposited with AZO seed layers were then inserted in the preheated synthesis aqueous solutions and ZnO nanowires were grown for 180 min at 90℃. Density, length and aspect ratio of the grown ZnO nanowires were investigated. Composition, structural and optical properties of the grown ZnO nanowires were analyzed, Characteristics of the ZnO nanowires were comparatively studied in relation with Zn2+ ion concentration measured directly after the preheating of synthesis aqueous solution.

In this study, magnesium (Mg), zinc (Zn) and aluminium (Al) as anode electrode and the solution of NaCl dissolved with 2~20 wt% as electrolytes were used for the metal-air cell. The open circuit voltage, short circuit current and I-V characteristics upon different kinds of anode electrode and electrolyte concentration were investigated. The open circuit voltage, initially about 1.45 V, rises to 1.6 V during the first 10 minutes indicating the necessity of an induction time to activate the catalyst on the air cathode. The short circuit current increases with an increased concentration of NaCl, causes an increase in the conductivity of the electrolyte solution, but the open circuit voltage did not under undergo influence of electrolyte. From NaCl 20 wt% electrolyte, the maximum output power of the magnesium electrode materials was measured with 177mW. It is found that the power characteristics of metal-air cell could be improved by using magnesium electrode materials in the NaCl electrolyte.

Porous carbon electrodes with wooden materials are manufactured by molding carbonized wood powder. Electrical properties of the interface for electrolyte and porous carbon electrode are investigated from viewpoint of NaCl electrolyte concentration, capacitance and complex impedance. Density of porous carbon materials is 0.47∼0.61 g/cm3. NaCl electrolytic absorptance of the porous carbon materials is 5∼ 30%. As the electrolyte concentration increased, capacitance is increased and electric resistance is decrease with electric double layer effect of the interface. The electric current of the porous carbon electrode compared in the copper and the high density carbon electrode was improved on a large scale, due to a increase in surface area. The circuit current increased as the distance between of the porous carbon electrode and the zinc electrode decreased, due to increase in electric field. Experimental results indicated that the current properties of galvanic cell could be improved by using porous carbon electrode.