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수평 구조의 MOS-controlled Thyristor에서 채널에서의 길이 및 불순물 농도에 의한 스위칭 특성

김남수, 최지원, 이기영, 주병권, 정태웅

Switching Characteristics due to the Impurity Concentration and the Channel Length in Lateral MOS-controlled Thyristor

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J Electr Electron Mater 2005;18(1):17-23.
Published online: January 1, 2005
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Switching Characteristics due to the Impurity Concentration and the Channel Length in Lateral MOS-controlled Thyristor
J Electr Electron Mater. 2005;18(1):17-23.   Published online January 1, 2005
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

Format:
Include:
Switching Characteristics due to the Impurity Concentration and the Channel Length in Lateral MOS-controlled Thyristor
J Electr Electron Mater. 2005;18(1):17-23.   Published online January 1, 2005
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