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"Chemical bath deposition"

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"Chemical bath deposition"

Regular Paper : Semiconductor ; Properties of the ZnS Thin Film Buffer Layer by Chemical Bath Deposition Process with Different Solution Concentrations and Deposition Time
Kyeong Tae Son, Jong Wan Kim, Min Young Kim, Jun Chul Shin, Sung Hee Jo, Dong Gun Lim
J Electr Electron Mater 2014;27(5):269-275.   Published online May 1, 2014
In this study, chemical bath deposition method was used to grow Zinc sulfide(ZnS) thin filmsfrom NH3/SC(NH2)2/ZnSO4 solutions at 90℃. ZnS thin films have been prepared onto ITO glass. Theconcentrations of ZnSO4 and NH were varied while the concentration of Thiourea was fixed in 0.52 M. Structural, optical, electrical characteristic of ZnS thin films were measured. The physical and opticalproperties of different ZnS thin films were influenced severely by the concentration of the two reactingchemicals. The optimal concentration of ZnSO4 and NH3 was 0.085 M and 1.6 M, respectively.
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Effects of pH of Reaction Solution on the Structural and Optical Properties of CdS Thin Films for Solar Cell Applications
Jae Hyeong Lee
J Electr Electron Mater 2011;24(8):616-621.   Published online August 1, 2011
In this paper, CdS thin films, which were widely used window layer of the CdTe and the Cu(In,Ga)Se2 thin film solar cell, were grown by chemical bath deposition, and effects of pH of reaction solution on the structural and optical properties were investigated. For pH<10.5, as the pH of reaction solution was higher, the deposition rate of CdS films was increased by improving ion-by-ion reaction in the substrate surface and the crystallinity of the films was improved. However, when the pH was higher than 10.5, the deposition rate was decreased because of smaller Cd2+ ion concentration in the reaction solution. Also, the crystallinity of the films were deteriorated. The CdS films deposited at lower pH showed poor optical transmittance due to adsorbed colloidal particles, while the transmittance was improved for higher pH.
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Characterization of CdS Thin Films and CdS/CdTe Heterojunction Prepared by Different Techniques
J Electr Electron Mater 2005;18(3):199-205.   Published online March 1, 2005
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