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"Cd-free buffer Layers"

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"Cd-free buffer Layers"

Regular Paper : Semiconductor ; Properties of the ZnS Thin Film Buffer Layer by Chemical Bath Deposition Process with Different Solution Concentrations and Deposition Time
Kyeong Tae Son, Jong Wan Kim, Min Young Kim, Jun Chul Shin, Sung Hee Jo, Dong Gun Lim
J Electr Electron Mater 2014;27(5):269-275.   Published online May 1, 2014
In this study, chemical bath deposition method was used to grow Zinc sulfide(ZnS) thin filmsfrom NH3/SC(NH2)2/ZnSO4 solutions at 90℃. ZnS thin films have been prepared onto ITO glass. Theconcentrations of ZnSO4 and NH were varied while the concentration of Thiourea was fixed in 0.52 M. Structural, optical, electrical characteristic of ZnS thin films were measured. The physical and opticalproperties of different ZnS thin films were influenced severely by the concentration of the two reactingchemicals. The optimal concentration of ZnSO4 and NH3 was 0.085 M and 1.6 M, respectively.
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