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CST
WHERE t1.sid in(parameter_dbtbl_keyword '%CST%') and t1.xml_status <> 99
2
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"CST"
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CST (2)
Step-bunching (2)
Closed space technique (1)
EPD (1)
Etch pit density (1)
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2007 (1)
2006 (1)
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Shigehiro Nishino (2)
Gi-Sub LEE (1)
Won-Jae Lee (1)
Chi-Kwon Park (1)
Byoung-Chul Shin (1)
Keywords
CST (2)
Step-bunching (2)
Closed space technique (1)
EPD (1)
Etch pit density (1)
MESFET (1)
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p-type epilayer (1)
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SiC epilayer (1)
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"CST"
Epitaxial Layer Growth of p-type 4H-SiC(0001) by the CST Method and Electrical Properties of MESFET Devices with Epitaxially Grown Layers
Gi-Sub LEE, Chi-Kwon Park, Won-Jae Lee, Byoung-Chul Shin, Shigehiro Nishino
J Electr Electron Mater
2007;20(12):1056-1061.
Published online December 1, 2007
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4H-SiC (0001）Epilayer Growth and Electrical Property of Schottky Diode
Shigehiro Nishino
J Electr Electron Mater
2006;19(4):344-349.
Published online April 1, 2006
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