Wearable temperature sensors are becoming increasingly important for continuous health monitoring, personalized healthcare, and biointegrated electronic systems. However, conventional temperature-sensing platforms often suffer from limited thermal sensitivity, insufficient mechanical compliance, and unstable performance under repeated deformation, making it difficult to detect subtle physiological temperature variations in real time. Here, this tutorial status report presents a fabrication strategy for highly sensitive wearable temperature sensors based on gold-doped crystalline silicon nanomembranes. Gold diffusion into crystalline silicon introduces deep-level impurity states that modulate the Fermi level and shift the freeze-out region toward the physiological temperature range, enabling an ultrahigh negative temperature coefficient of resistance. By integrating the gold-doped silicon nanomembrane with a polyimide-supported ultrathin platform, neutral mechanical plane design, and serpentine mesh interconnects, the resulting device can provide high thermal sensitivity, fast response, conformal skin attachment, and stable operation under mechanical deformation. This fabrication approach is expected to broaden the use of impurity-engineered silicon nanomembranes in next-generation wearable sensors, flexible bioelectronics, and multifunctional healthcare monitoring systems.
This study aimed to elucidate factors limiting power conversion efficiency (PCE) in GaN-based micro-light-emitting diodes (μ-LEDs). To this end, we investigated the effects of operating temperature and chip-size of μ-LEDs on their efficiency. For the investigation, 460 nm-emitting μ-LEDs with various chip-sizes were fabricated; then their characteristics were carefully measured from 100 to 400 K. As the chip-size decreases and the operating temperature increases, their PCE and external quantum efficiency (EQE) decrease, while voltage efficiency (VE) increases. This indicates that the EQE plays a more important role than the VE in determining the PCE of μ-LEDs. Particularly, for a chip-size of 20 × 20 μm2, the EQE was very lower and the ideality factor was unexpectedly higher compared to the others for all operating temperatures, which is believed to be due to the critical plasma damage at the sidewall during dry-etching process for the chip-size < 20 × 20 μm2.
Piezoelectric thin films have become increasingly significant in applications such as MEMS devices, wearable electronics, and lab-on-a-chip systems due to the miniaturization and integration of electronic devices. For piezoelectric thin films, even when an electric signal is applied in the thickness direction, greater deformation can often be observed in the in-plane direction, which is perpendicular to the electric field. Therefore, piezoelectric thin film devices are frequently designed using the transverse mode. As a result, it is crucial to evaluate piezoelectric thin films by measuring their transverse piezoelectric coefficient. This tutorial paper introduces a method for evaluating the effective transverse piezoelectric coefficient (e31,f) of piezoelectric thin films using laser Doppler vibrometry (LDV). Additionally, the paper outlines a step-by-step procedure for measuring e31,f while using Bi1/2Na1/2TiO3-based piezoelectric thin films as an example. This tutorial is expected to provide a practical and valuable method for measuring and analyzing the transverse piezoelectric properties, thereby supporting the development of new piezoelectric thin film materials.
One method to increase the output of solar modules is the application of the Half-cut technique, which requires a scribing process involving direct irradiation of infrared lasers on the solar cells. During this process, the laser melts the surface of the solar cells at high temperatures, enabling mechanical division, but this can lead to output loss due to thermal degradation caused by the laser. To minimize such losses, a low-temperature and low-loss division method has been devised. In this study, we compared the electrical characteristics and leakage currents affecting output degradation between the newly devised low temperature and low-loss cell division method and the conventional laser division method. Additionally, we conducted a 3-point flexural test to evaluate the mechanical properties of both methods.
Quantum computing is set to transform the field of materials science, offering computational methods that could far surpass conventional approaches for tackling intricate material design challenges. This review introduces the foundational principles of rapidly growing quantum computing and its application trends in the design and analysis of nanomaterials. We explain how quantum speedup, achieved through quantum algorithms utilizing qubit superposition and entanglement, is applied to material design. Additionally, the principles and research trends of quantum variational methods, including the Variational Quantum Eigensolver (VQE), which has recently gained attention as a quantum algorithm simulation technique, will be discussed. By combining new techniques based on quantum algorithms with the quantum speed-up, the quantum computing is expected to offer new insights into data-intensive materials research and provide innovative methodologies for the development of new functional materials. With the advancement of quantum algorithms, the field of materials science could enter a new era, enabling more precise and efficient approaches in materials design and functional analysis.
The low-temperature coefficient of resistance (TCR) is a crucial factor in the development of space-grade resistors for temperature stability. Consequently, extensive research is underway to achieve zero TCR. In this study, resistors were deposited by co-sputtering nickel-chromium-based composite compositions, metals showing positive TCR, with SiO2, introducing negative TCR components. It was observed that achieving zero TCR is feasible by adjusting the proportion of negative TCR components in the deposited thin film resistors within certain compositions. Additionally, the correlation between TCR and deposition conditions, such as sputtering power, Ar pressure, and surface roughness, was investigated. We anticipate that these findings will contribute to the study of resistors with very low TCR, thereby enhancing the reliability of space-level resistors operating under high temperatures.
Titanium dioxide (TiO₂) holds significant scientific and technological relevance as a key photocatalyst and resistive random-access memory, demonstrating unique physicochemical properties and serving as an n-type semiconductor. Understanding the density and arrangement of oxygen vacancies (VOs) is crucial for tailoring TiO₂’s properties to diverse technological needs, driving increased interest in exploring oxygen vacancy complexes and superstructures. In this mini review, we summarize the recent understandings of the fundamental properties of oxygen vacancies in bulk rutile (R-TiO₂) and anatase (A-TiO₂) based on DFT and beyond method. We specifically focus on the excess electrons and their spatial arrangement of disordered single VO in bulk R and A-TiO₂, aligned with the experimental findings. We also highlight the theoretical works on investigating the geometries and stabilities of ordered VOs complexes in bulk TiO₂. This comprehensive review provides insights into the fundamental properties of excess electrons in reduced TiO₂, offering valuable perspectives for future research and technological advancements in TiO₂-based devices.
A triboelectric nanogenerator is a promising energy harvester operated by the combined mechanism of electrostatic induction and contact electrification. It has attracting attention as eco-friendly and sustainable energy generators by harvesting wasting mechanical energies. However, the power generated in the natural environment is accompanied by low frequencies, so that the output power under such input conditions is normally insufficient amount for a variety of industrial applications. In this study, we introduce a non-contact rotational triboelectric nanogenerator using pedaling and gear systems (called by P-TENG), which has a mechanism that produces high power by using rack gear and pinion gear when a large force by a pedal is given. We design the system can rotate the shaft to which the rotor is connected through the conversion of vertical motion to rotational motion between the rack gear and the pinion gear. Furthermore, the system controls the one directional rotation due to the engagement rotation of the two pinion gears and the one-way needle roller bearing. The TENG with a 2 mm gap between the rotor and the stator produces about the power of 200 __ and turns on 82 LEDs under the condition of 800 rpm. We expect that P-TENG can be used in a variety of applications such as operating portable electronics or sterilizing contaminated water.
The purpose of this paper is to help those who research and develop solar cells in university laboratories and industrial sites understand the most basic and important quantum efficiency measurement and analysis method in analyzing solar cell performance. Starting with the definition of quantum efficiency, we calculate the theoretical current density according to the band gap of the solar cell material from the solar spectrum, along with a detailed introduction to the measurement and analysis methods, and measure and analyze the theoretical current density and quantum efficiency. We discuss in depth how to analyze the performance of solar cells through Quantum efficiency measurement and analysis of solar cells is a very useful method that can give intuition to solar cell performance analysis as it can analyze solar cells according to depth (front emitter, bulk, rear surface). Students and researchers who study solar cells with a deep understanding of theoretical current density and quantum efficiency measurement analysis are expected to use it as a basis for analyzing solar cell performance.
Crystalline silicon solar cells have attracted great attention for their various advantages, such as the availability of raw materials, high-efficiency potential, and well-established processing sequence. Tunnel oxide passivated contact (TOPCon) solar cells are widely regarded as one of the most prospective candidates for the next generation of high-performance solar cells because an efficiency of 26% has been achieved in small-area solar cells. Compared to n-type TOPCon solar cells, the photo conversion efficiency (PCE) of p-type TOPCon is slightly higher. The highest PCEs of p-type TOPCon and n-type TOPCon solar cells are 26.0% and 25.8%, respectively. Despite the highest efficiency in small-area cells, limited progress has been achieved in p-type TOPCon solar cells for large are due to their lower carrier lifetime and inferior surface passivation with the boron-doped c-Si wafer. Nevertheless, it is of great importance to promoting the p-type TOPCon technology due to its lower price and well-established manufacturing procedures with slight modifications in the PERC solar cells production lines. The progress in different approaches to increase the efficiencies of p-type TOPCon solar cells has been reported in this review article and is expected to set valuable strategies to promote the passivation technology of p-type TOPCon, which could further increase the efficiency of TOPCon solar cells.
p-type Tunnel Oxide Passivating Contacts (TOPCon) solar cell is fabricated with a poly-Si/SiOx structure. It simultaneously achieves surface passivation and enhances the carriers’ selective collection, which is a promising technology for conventional solar cells. The quality of passivation is depended on the quality of the tunnel oxide layer at the interface with the c-Si wafer, which is affected by the bond of SiO formed during the subsequent annealing process. The highest cell efficiency reported to date for the laboratory scale has increased to 26.1%, fabricated by the Institute for Solar Energy Research. The cells used a p-type float zone silicon with an interdigitated back contact (IBC) structure that fabricates poly-Si and SiOx layer achieves the highest implied open-circuit voltage (iVoc) is 750 mV, and the highest level of edge passivation is 40%. This review presents an overview of p-type TOPCon technologies, including the ultra-thin silicon oxide layer (SiOx) and poly-silicon layer (poly-Si), as well as the advancement of the SiOx and poly-Si layers. Subsequently, the limitations of improving efficiency are discussed in detail. Consequently, it is expected to provide a basis for the simplification of industrial mass production.
La0.7Sr0.3-xMgxMnO3 (LSMMO) (x=0.05~0.20) specimens are fabricated by a solid phase sintering method, and the sintering temperature and time are 1,300℃ and 2 hours, respectively. The dependence of the crystalline structure according to the amount of Mg2+ contents is not observed, and all specimens show a polycrystalline rhombohedral crystal structure, the X-ray diffraction (110) peaks move to the high angle side with increasing the amount of Mg2+ contents. LSMMO specimens exhibit a granule-shaped microstructure with an average grain size of 1 μm or less. Resistivity gradually decrease as the amount of Mg2+ contents increased. And in the La0.7Sr0.1Mg0.2MnO3 specimen, resistivity and B25/65-value are 36.7 Ω-cm and 394 K at room temperature, respectively. LSMMO specimens show a variable-range hopping (VRH) electrical conduction mechanism, and the negative temperature of coefficient of resistance (NTCR) is approximately 0.37~0.38%/℃.
We investigated the properties of vanadium oxide (VOx) buffer layers deposited by a dual RF magnetron sputtering method under various target powers for inverted organic solar cells (IOSCs). Sputter fabricatged VOx thin films exhibited higher crystallinity with the increase of target power, resulting in a uniform and large grain size. The electrical properties of VOx films are improved with the increase of target power because of the increase of V content. In the results, the performance of IOSCs critically depended on the target power during the film growth because the crystalllinity of the VOx film affects the carrier mobility of the VOx film.
As energy depletion and environmental pollution problems are intensified, research has been conducted actively on alternative energy sources, an eco-friendly and continuous available energy conversion system. So has been organic solar cells whose efficiency is improved to 18.32%. The photoactive layer inside the solar cell is composed of a donor and a acceptor, and the combination of materials capable of effectively exchanging electrons greatly affects the efficiency of the organic solar cell. Accordingly, various researches have been conducted to improve the efficiency, and the maximum efficiency could be achieved by a solar cell with high carrier generation and low charge recombination characteristics through the introduction of a non-fullerene acceptor and material reconstruction. Organic solar cells are still difficult to commercialize due to their efficiency limitations and light stability, but if a photoactive layer consisting of a donor capable of efficiently absorbing long-wavelength light and an acceptor capable of forming an appropriate energy level is designed, the efficiency of the organic solar cell will reach 20%.
Morphotropic phase boundary (MPB), which is a special boundary that separates two or multiple different phases in the phase diagram of some ferroelectric ceramics, is an important concept in identifying physics that includes piezoelectric responses. MPB, which had not been discovered in organic materials until recently, was discovered in poly(vinylidene fluoride-co- trifluoroethylene (P(VDF-TrFE)), resulting from a molecular approach. The piezoelectric coefficient of P(VDF-TrFE) in this MPB region was achieved up to -63.5 pC N-1, which is about two times as large as the conventional value of -30 pC N-1 of P(VDF-TrFE). An order-disorder arrangement greatly affects the rise of the piezoelectric effect and the ferroelectric, paraelectric and relaxor ferroelectric of P(VDF-TrFE), so the arrangement and shape of the polymer chain is important. In this review, we investigate the origin of negative longitudinal piezoelectric coefficients of piezoelectric polymers, which is definitely opposite to those of common piezoelectric ceramics. In addition to the mainly discussed issue about MPB behaviors of ferroelectric polymers, we also introduce the consideration about polymer chirality resulting in relaxor ferroelectric properties. When the physics of ferroelectric polymers is unveiled, we can improve the piezoelectric and pyroelectric properties of ferroelectric polymers and contribute to the development of next-generation sensor, energy, transducer and actuator applications.
We prepared carbon nanotube (CNT) paper by a vacuum filtration method for the use of a chip-typed resistor as a precision passive device with a constant resistance. Hybrid resistor composed of the CNT resistor with a negative temperature coefficient of resistance (T.C.R) and a metal alloy resistor with a positive T.C.R could lead to a constant resistance, because the resistance increase owing to the temperature increase at the metal alloy and decrease at the CNT could counterbalance each other. The constant resistance for the precision passive devices should be maintained even when a heat was generated by a current flow resulting in resistance change. Performance reliabilities of the CNT resistor for the precision passive device applications such as electrical load limit, environmental load limit, and life limit specified in IEC 60115-1 must be ensured. In this study, therefore, the rated power determination and T.C.R tests of the CNT paper were conducted. -900~-700 ppm/℃ of TCR, 0.1~0.2 A of the carrying current capacity, and 0.0625~0.125 W of the rated power limit were obtained from the CNT paper. Consequently, we confirmed that the application of CNT materials for the precision hybrid passive devices with a metal alloy could result in a better performance reliability with a zero tolerance.
Phase evolution, sintering behavior, microstructure, and microwave dielectric properties of (1-x) mol Ba3V4O13 - (x) mol BaV2O6 system were investigated. The sintered specimens of all compositions consisted of Ba3V4O13 and BaV2O6, and no secondary phase was observed. As x increased, the linear shrinkage decreased to the composition of x=0.5, and then increased again, implying that Ba3V4O13 and BaV2O6 phases interfered mutually with each other during sintering. All compositions showed a dense microstructure with a large grain growth. Cracks were observed in some compositions because of the relatively high sintering temperature of 620~640℃. As x increased, the dielectric constant increased, while the quality factor was maintained from about 50,000 GHz to about 70,000 GHz up to the composition of x=0.9, and then decreased to 20,987~27,180 GHz at the composition of x=1.0. As x increased, the temperature coefficient of the resonance frequency showed a (+) value from a (-) value. The dielectric constant, the quality factor, and the temperature coefficient of resonant frequency of x=0.7 composition sintered at 640℃ for 4 hours were 10.61, 71,126 GHz, and -4.9 ppm/℃, respectively. This composition showed a good chemical compatibility with Al powder, indicating that the Ba3V4O13-BaV2O6 ceramics are a candidate material for ULTCC (Ultra-Low Temperature Co-fired Ceramics) applications.
CNT fiber has been in the spotlight as a conductor, but the conductivity of CNT fibers do not match that of CNT. This study reveals that the conductivity of CNT fiber can be improved by depositing Al/Cu through vacuum evaporation. Cu is commonly used for deposition on CNT fibers. But low bonding strength of the interface between CNT and Cu could be a disadvantage. To overcome this, Al was deposited on the CNT fiber for forming aluminum carbide islands to increase the interfacial bonding strength. The conductivity characteristics were improved as the deposition time increased. The resistance was measured as a function of temperature, demonstrating that the temperature coefficient of resistance (TCR) is improved to be 241 ppm/℃ in comparison with that of as-received CNT fibers at -1,251 ppm/℃, when the CNT fibers are deposited with Al and Cu, respectively, for 90s and for 540s.
High reliability thin film transistors are important factors for next-generation displays. The reliability of transparent a-IGZO semiconductors is being actively studied for display applications. A plasma treatment can fill the oxygen vacancies in the channel layer and the channel layer/insulating layer interface so that the device can work stably under a bias voltage. This paper studies the effect of plasma treatment on the performance of a-IGZO TFT devices. The influence of different plasma gases on the electrical parameters of device and its working reliability are reviewed. The article mentions argon, fluorine, hydrogen and several ways of processing in the atmosphere. Among these methods, F (fluorine) plasma treatment can maximize equipment reliability. It is expected that the presented results will form a basis for further research to improve the reliability of a-IGZO TFT.
The high power of a shingled photovoltaic module can be attributed to its low cell-to-module loss. The production of high power modules in limited area requires high efficiency solar cells. Shingled photovoltaic modules can be made by divided solar cells, which can be produced by the laser scribing process. After dividing the 21% PERC cell using laser scribing, the efficiency decreased by approximately 0.35%. However, there was no change in the efficiency of the solar cell having relatively lower efficiency, because the laser scribing process induce higher heat damages in solar cells with high efficiency. To prove this phenomena, the J0 (leakage current density) of each cell was analyzed. It was found that the J0 of 21% PERC increased about 17 times between full and divided solar cell. However, the J0 of 20.2% PERC increased only about 2.5 times between full and divided solar cell.
In this study, we investigate the effect of an Sb-deficiency on the thermoelectric properties of double-filled n-type skutterudite (In0.05Yb0.15Co4Sb12-x). Samples were prepared by encapsulated induction melting, consecutive long-time annealing, and finally spark plasma sintering processes. The Sb-deficient sample contained a CoSb2 secondary phase. Both the double-filled n-type skutterudite pristine and Sb-deficient samples showed metallic behavior in electrical conductivity with increasing temperature. The carrier concentration of the Sb-deficient sample decreased compared with that of the pristine sample. Due to a decrease in carrier concentration, the Sb deficient sample showed decreased electrical conductivity and an increased Seebeck coefficient compared with the conductivity and coefficient of the pristine sample. Furthermore, the Sb deficient sample showed an increase in the power factor (σ·S2); the power factor maximum shifted to athe lower temperature side than ones of the pristine sample. As a result, the Sb-deficient sample represents an improved average figure of merit (ZT) and a ZTmax temperature lower than that of the pristine sample. Therefore, we propose that Sb-deficient double-filled n-type skutterudite thermoelectric material (In0.05Yb0.15Co4Sb12-x) be used in the 573~673 K temperature range.
Raman spectra of a-C:H thin films deposited with an unbalanced magnetron sputtering system showed that the G peak shifted to a higher wavenumber as the target power density increased and ID/IG ratio increased from 0.902 to 1.012. Moreover, the transmittance of a-C:H films fabricated at 60 nm tended to decrease with increasing target power density; at 550 nm in the visible light region, the transmittance decreased from 69% to 58%. The rms surface roughness values of the a-C:H thin films decreased with increasing target power density, and varied from 1.11 nm to 0.71 nm. In order to achieve efficient light trapping, the light scattering at the rough interface must be enhanced. Consequently, the surface roughness of the thin film will decrease with the target power density. Further, the refractive index and reflectivity of the a-C:H thin films increased with increasing target power density; however, the Brewster angle decreased with the target power density. Hence, dye-sensitized solar cells using an a-C:H antireflective coating increased the CE, VOC, and JSC by approximately 8.6%, 5.5%, and 4.5%, respectively.
In this study, we fabricated plate-type shunt resistors with thermal stability by parallelly connecting metal alloy plates with positive temperature coefficient of resistance (TCR) and carbon nanotube (CNT) plates with negative TCR. The metal alloy plates, which were prepared by alloying Cu and Mn with a composition of 91 wt% of Cu and 9 wt% of Mn, showed around 800 ppm/℃ of TCR, and the CNT plates prepared from the CNT solution by using the vacuum filtration method showed around -800 ppm/℃ of TCR. The shunt resistor that was fabricated by stacking metal alloy plates and CNT plates in this work showed about 46.93 ppm/℃ of TCR. Therefore, we conclude that a shunt resistor with low TCR can be realized by simply adjusting the TCR of the metal alloy only, because the TCR of the CNT plate has an identical value.
Micro-LEDs show lower efficiencies compared to general LEDs having large areas. Simulations were carried out using ray-tracing software to investigate the change in light extraction efficiency and light distribution according to chip-size of blue flip-chip micro-LEDs (FC μ-LEDs). After fixing the height of the square FC μ-LED chip at 158 μm, the length of one side was varied, with dimensions of 2, 5, 10, 30, 50, 100, 300, and 500 μm. The highest light-extraction efficiency was obtained at 10 μm, beyond which the efficiency decreased as the chip-size increased. The chip size-dependence of the FC μ-LEDs both without the patterned sapphire substrate, as well as vertical FC μ-LEDs, were analyzed.
Lithium-ion batteries used for IT, automobiles, and industrial energy-storage devices have battery management systems (BMS) to protect the battery from abnormal voltage, current, and temperature environments, as well as safety devices like, current interruption device (CID), fuse, and vent to obtain positive temperature coefficient (PTC). Nonetheless, there are harmful to human health and property and damage the brand image of the manufacturer because of smoke, fire, and explosion of lithium battery packs. In this paper, we propose a systematic protection algorithm combining battery temperature, over-current, and interconnection between protection elements to prevent copper deposition, internal short circuit, and separator shrinkage due to frequent and instantaneous over-current discharges. The parameters of the proposed algorithm are suggested to utilize the experimental data in consideration of battery pack operating conditions and malicious conditions.
We propose a SPICE model of drain-induced barrier lowering (DIBL) for a junctionless cylindrical surrounding gate (JLCSG) MOSFETs. To this end, the potential distribution in the channel is obtained via the Poisson equation, and the threshold voltage model is presented for the JLCSG MOSFET. In a JLCSG nano-structured MOSFET, a channel radius affects the carrier transfer as well as the channel length and oxide thickness; therefore, DIBL should be expressed as a function of channel length, channel radius, and oxide thickness. Consequently, it can be seen that DIBLs are proportional to the power of -3 for the channel length, 2 for the channel radius, 1 for the thickness of the oxide film, and the constant of proportionality is 18.5 when the SPICE parameter, the static feedback coefficient η, is between 0.2 and 1.0. In particular, as the channel radius and the oxide film thickness increase, the value of η remains nearly constant.
The phase evolution, microstructure, and microwave dielectric properties of Ba(Mg0.5-2xY2xW0.5-xTix)O3 (x＝ 0.005~0.05) ceramics sintered at 1,700℃ for 1h were investigated. All compositions exhibited a 1:1 ordered cubic perovskite structure. The field emission scanning electron microscopy image revealed a dense microstructure in all the compositions. As the value of x increased, the lattice parameter, dielectric constant, and quality factor increased. The temperature coefficient of resonant frequency changed from -19.6 ppm/℃ to -5.9 ppm/℃ with increasing x value. The dielectric constant, quality factor, and temperature coefficient of resonant frequency of Ba(Mg0.40Y0.10W0.45Ti0.05)O3 were 21.7, 132,685 GHz, and -5.9 ppm/℃, respectively.
Lead zirconate titanate/poly-vinylidene fluoride (PZT/PVDF) piezoelectric devices were fabricated by incorporating carbon nanotubes (CNTs), for use as flexible energy harvesting devices. CNTs were added to maximize the formation of the β phase of PVDF to enhance the piezoelectricity of the devices. The phase transition of PVDF induced by the addition of CNTs was confirmed by analyzing the X-ray diffraction patterns, scanning electron microscopy images, and atomic force microscopy images. The enhanced output efficiency of the PZT/PVDF piezoelectric devices was confirmed by measuring the output current and voltage of the fabricated devices. The maximum output current and voltage of the PZT/PVDF piezoelectric devices was 200 nA and 350 mV, respectively, upon incorporation of 0.06 wt% CNTs.
In this paper, we discuss the fabrication of metal alloy resistors. We connected them in parallel to estimate their resistance and temperature coefficient of resistance (TCR). The fabricated resistors have different resistances, 5 and 10 Ω and different TCRs, 50 and 200 ppm/℃. Each resistor was confirmed to have the correct atomic composition through the use of energy dispersive X-ray (EDX). The resistors’ electrical properties were confirmed by measuring resistance and TCR. The resistance and TCR of the resistors connected in parallel were estimated through the increase in resistance due to the increase in temperature, and were compared with the measured values. We are confident that this TCR estimation technique, which uses the increase in resistance due to temperature, will be very useful in designing and fabricating resistors with low and stable TCR.
In this study, we designed the temperature coefficient of resistance (TCR) and heat radiation properties of shunt fixed resistors by adjusting the atomic composition of a metal alloy resistor, and fabricated a resistor that satisfied the designed properties. Resistors with similar atomic composition of copper and nickel showed low TCR and excellent shunt fixed resistor properties such as short-time overload, rated load, humidity load, and high temperature load. Finally, we expect that improved sensor accuracy will be obtained in current-distribution-type shunt fixed resistor for IoT sensors by designing the atomic composition of the metal alloy resistor proposed in this work.
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