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"Boron penetration"

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"Boron penetration"

Dependency of the Device Characteristics on Plasma Nitrided Oxide for Nano-scale PMOSFET
J Korean Inst Electr Electron Mater Eng 2007;20(7):569-574.   Published online July 1, 2007
DOI: https://doi.org/10.4313/JKEM.2007.20.7.569
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A Stacked Polusilicon Strucutre by Nitridation in N2 Atmosphere for Nano-scale CMOSFETs
J Korean Inst Electr Electron Mater Eng 2005;18(11):1001-1006.   Published online November 1, 2005
DOI: https://doi.org/10.4313/JKEM.2005.18.11.1001
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Characteristics of AC Hot-carrier-induced Degradation in nMOS with NO-based Gate Dielectrics
Sung Keun Chang, Youn Jang Kim
J Korean Inst Electr Electron Mater Eng 2004;17(6):586-591.   Published online June 1, 2004
DOI: https://doi.org/10.4313/JKEM.2004.17.6.586
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