To ensure the long-term reliability of flexible photovoltaic (FPV) modules, it is crucial to develop an effective moisture barrier layer that prevents the infiltration of moisture and oxygen. We developed such a layer composed of parylene (700 nm) and AlOx (70 nm), optimizing its material properties, moisture-blocking performance, and processing conditions. The barrier layer applied to the Ethylene Tetrafluoroethylene (ETFE) substrate demonstrated a water vapor transmission rate (WVTR) of 6.33 × 10^-2 g/m²/day and an average visible light transmittance (AVT) of 85.3% over the 380-780 nm wavelength range. For the FPV module with this barrier, Damp/Heat (DH) reliability testing was conducted at 85℃ and 85% relative humidity for up to 1,000 hours. During testing, the power conversion efficiency (PCE) decreased slightly from 25.4% (0 hr) to 24.7% (1,000 hr), reflecting a minimal reduction of only 0.7%. The primary cause of degradation was identified as a -4% relative change in shortcircuit current density (JSC) before and after DH testing. Consequently, the ETFE/parylene/AlOx multilayer moisture barrier proved highly effective in ensuring the long-term reliability of solar modules.

Ga₂O₃ is an ultra-wide bandgap semiconductor material that offers superior electrical properties for high-voltage power electronics but suffers from poor thermal conductivity compared to conventional semiconductors. To overcome this thermal limitation, we developed Ga₂O₃/4H-SiC heterojunction Schottky barrier diodes that utilize the high thermal conductivity of SiC substrates. Using the aerosol deposition method, we successfully fabricated devices with different Ga₂O₃ film thicknesses (0.8-1.4 μm) and achieved exceptional electrical performance with the 0.8 μm device showing a specific on-resistance of 41 mΩ·cm² and a leakage current as low as 1.26 × 10^-10 A/cm² while maintaining stable operation up to 200℃. The devices demonstrated breakdown voltages reaching 2,365 V and maintained excellent rectification ratios above 1010 even at elevated temperatures. All fabricated devices with different film thicknesses showed consistent high-temperature stability, confirming the effectiveness of the heterojunction approach. These results provide a viable pathway for developing thermally stable, high-performance power devices essential for next-generation electric vehicle and renewable energy applications

Department of Electric Materials Engineering, Kwangwoon University, Seoul 01897, Korea (Received June 13, 2024; Revised July 8, 2024; Accepted July 10, 2024) Abstract: Wide bandgap (WBG) devices, especially SiC, are gaining traction as materials for high-power EV conversion devices due to their superior efficiency and switching capabilities compared to Si-based power devices. SiC allows for high power, high temperature, and high frequency applications because of its outstanding thermal conductivity, saturation velocity, and dielectric breakdown field. SiC-based MPS diodes combine the advantages of SiC-based SBDs and PiN diodes, allowing high-frequency switching operation with low leakage currents under high voltage conditions. However, MPS diodes exhibit snapback phenomena influenced by the P⁺ region’s size, necessitating optimization. A TCAD simulation studied the impact of the P+ region’s depth and width on MPS diode performance. Increasing the P⁺ width raised the On-specific resistance (R_on,sp) and lowered the maximum voltage during snapback (V_snap). Increasing the depth decreased both Breakdown voltage (BV) and V_snap. A trade-off between the semiconductor performance index BFOM and V_snap was identified, leading to optimized dimensions. The optimized MPS diode shows a low V_snap of about 3.89 V and a high BFOM of 1.72 GW·㎠, highlighting its potential as a next-generation high-performance power conversion device.

Gallium oxide (Ga₂O₃) is emerging as a next-generation power semiconductor material due to its excellent electrical properties, including an ultra-wide bandgap of approximately 4.8 eV and a breakdown electric field of about 7 MV/cm. However, its low thermal conductivity of around 0.13 W/cmK presents significant challenges to the performance and reliability of Ga₂O₃- based devices. In this study, we employed the Silvaco TCAD simulator to analyze the thermal and electrical characteristics of Ga₂O₃ Schottky barrier diodes (SBDs) with heat sinks of varying thermal conductivities. The results demonstrate that heat sinks with higher thermal conductivity effectively mitigate the temperature rise in the device, leading to an increase in current density. The limitation in heat dissipation due to parasitic on-state resistance not only affects device performance but also impacts longterm reliability. Therefore, this study contributes to the development of effective thermal management strategies for Ga₂O₃-based power semiconductors.

Oxide semiconductor gas sensors are widely used for detecting toxic, explosive, and flammable gases due to their simple structure, cost-effectiveness, and potential integration into compact devices. However, their reliable gas detection is hindered by a longstanding issue known as humidity dependence, wherein the sensor resistance and gas response change significantly in the presence of moisture. This problem has persisted since the inception of oxide semiconductor gas sensors in the 1960s. This paper explores the root causes of humidity dependence in oxide semiconductor gas sensors and presents strategies to address this challenge. Mitigation strategies include functionalizing the gas-sensing material with noble metal/transition metal oxides and rare-earth/rare-earth oxides, as well as implementing a moisture barrier layer to prevent moisture diffusion into the gas-sensing film. Developing oxide semiconductor gas sensors immune to humidity dependence is expected to yield substantial socioeconomic benefits by enabling medical diagnosis, food quality assessment, environmental monitoring, and sensor network establishment.

This reports the electrical properties of single-crystal β-gallium oxide (β-Ga₂O₃) vertical Schottky barrier diodes (SBDs) with a different guard ring structure. The vertical Schottky barrier diodes (V-SBDs) were fabricated with two types guard ring structures, one is with metal deposited on the Al₂O₃ passivation layer (film guard ring: FGR) and the other is with vias formed in the Al₂O₃ passivation layer to allow the metal to contact the Ga₂O₃ surface (metal guard ring: MGR). The forward current values of FGR and MGR V-SBD are 955 mA and 666 mA at 9 V, respectively, and the specific on-resistance (Ron,sp) is 5.9 mΩ·cm² and 29 mΩ·cm². The series resistance (Rs) in the nonlinear section extracted using Cheung’s formula was 6 Ω, 4.8 Ω for FGR V-SBD, 10.7 Ω, 6.7 Ω for MGR V-SBD, respectively, and the breakdown voltage was 528 V for FGR V-SBD and 358 V for MGR V-SBD. Degradation of electrical characteristics of the MGR V-SBD can be attributed to the increased reverse leakage current caused by the guard ring structure, and it is expected that the electrical performance can be improved by preventing premature leakage current when an appropriate reverse voltage is applied to the guard ring area. On the other hand, FGR V-SBD shows overall better electrical properties than MGR V-SBD because Al₂O₃ was widely deposited on the Ga₂O₃ surface, which prevent leakage current on the Ga₂O₃ surface.

In this paper, we discussed the effect of field plate dielectric materials such as silicon dioxide (SiO₂), aluminum oxide (Al₂O₃), and hafnium oxide (HfO₂) on the breakdown characteristics of β-Ga₂O₃ Schottky barrier diodes (SBDs). The breakdown voltage (BV) of the SBDs with a field plate was higher than that of SBDs without a field plate. The higher dielectric constant of HfO₂ contributed to the superior reduction in electric field concentration at the Schottky junction edge from 5.4 to 2.4 MV/cm. The SBDs with HfO₂ field plate showed the highest BV of 720 V, and constant specific on-resistance (R_on,sp) of 5.6 mΩ·㎠, resulting in the highest Baliga’s figure-of-merit (BFOM) of 92.0 MW/㎠. We also investigated the effect of dielectric thickness and field plate length on BV.

In this study, we measured and comparatively analyzed the characteristics of MPS (Merged Pin Schottky) diodes in 4H-SiC by changing the areal ratio between the Schottky and PN junction region. Increasing the temperature from 298 K to 473 K resulted in the threshold voltage shifting from 0.8 V to 0.5 V. A wider Schottky region indicates a lower on-resistance and a faster turn-on. The effective barrier height was smaller for a wider Schottky region. Additionally, the depletion layer became smaller under the influence of the reduced effective barrier height. The wider Schottky region resulted in the ideality factor being reduced from 1.37 to 1.01, which is closer to an ideal device. The leakage saturation current increased with the widening Schottky region, resulting in a 1.38 times to 2.09 times larger leakage current.

We investigated deep levels in n-type 4H-SiC epitaxy layer of the Schottky barrier diodes (SBD) and Junction Barrier Schottky (JBS) diodes by using deep level transient spectroscopy (DLTS). The I-V characteristics of the JBS devices show ~100 times lower leakage current level than SBDs owing to the grid structures in JBS. The reliable responses of the diodes for deep level transient analysis showed from C-V characteristics. Several deep electron traps were revealed by DLTS measurements in epitaxial layers in 4H-SiC. In both types of diodes, the peaks corresponding to shallow energy levels were observed with slightly different values of 0.132 eV for JBS and 0.186 eV for SBDs. The two remarkable deep level peaks (J2 and J3) have been obtained with 0.257 eV and 0.273 eV in JBS, and they were analyzed to have a similar trap concentration of ~10¹⁴ cm^-3. The comparison results showed that the defects could be related with device fabrication procedures such as ion-implantation and growth.

For electronic paper displays using electrophoresis, the response time and reflectivity of the image panel fabricated by filtering are analyzed. For the filtering process, a square wave and ramp wave are applied to white charged particles with a unique q/m value. We divide the sample panels into #1 to #4 according to the applied waveform in the filtering process. Step waves comprising two steps are used to drive the panel; therefore, we divide the driving conditions into D1~D4. The applied voltage at the first stage of the half cycle of the driving waveform moves the charged particles attached via the image force from the electrode, and the applied voltage at the second stage moves the floating charged particles by detaching. As mentioned, four types of driving conditions (D1 to D4) classified according to the half cycle of the driving waveform are applied to the samples #1 to #4), which are classified according to four types of filtering process. When driving condition D1 is applied to the four types of sample panels, the rise time of #1 is 1.59s, #2 is 1.706s, #3 is 1.853s, and #4 is 1.235s, resulting in #4 being relatively faster compared with other sample panels, and showing the same trend in other driving conditions. As a result, we confirm that applying the driving condition D1 causes abrupt movement of the white charged particles injected into the cell. When the same driving waveform (D1) is applied to each sample, reflectivities of 32.1% for #1, 31.4% for #2, 27.9% for #3, and 63.4% for #4 are measured. From the experiment, we confirm that the driving condition D1 (1s of 3.5 V, 9s of 3.0 V) and ramp wave #4 in filtering are desirable for good reflectivity and response time. Our research is expected to contribute to the improvement of the filtering process and optimization of the driving waveform.

In this study, the drift current characteristics of charged particles are analyzed for panels fabricated by varying the waveform biasing of the active particle loading method (APLM), which is a method driven by the electrophoretic principle of loading charged particles into a cell of a barrier rib-type electronic paper. We prepare 3 panels using APLM and 1 panel without APLM. The waveform of APLM uses square wave and ramp wave, and the step voltage wave is applied to the driving voltage. The drift currents measured from the square wave and ramp wave with the same period applied by APLM are 4.872 μC and 5.464 μC, respectively, and the ramp wave is shown to be relatively advantageous for loading charged particles that have a large q/m. The time–current curve results confirm that the abrupt movement of charged particles is occurring. When the step form wave signal with a short time of 1s is first applied, initial large movement of the charged particles is confirmed to occur in all samples, which is understood as the effect of applying the voltage necessary to remove the imaging force. The results of this study are expected to improve the loading of charged particles into the electronic paper cell, driven by the electrophoretic principle and optimization of the driving conditions.

The formation of inorganic thin films in low-temperature solution processes is necessary for a wide range of commercial applications of organic electronic devices. Aluminum oxide thin films can be utilized as barrier films that prevent the deterioration of an electronic device due to moisture and oxygen in the air. In addition, they can be used as the gate insulating layers of a thin film transistor. In this study, aluminum oxide thin film were formed using two methods simultaneously, a thermal process and the DUV process, and the properties of the thin films were compared. The result of converting aluminum nitrate hydrate to aluminum oxide through a hybrid process using a thermal treatment and DUV was confirmed by XPS measurements. A film-based a-IGZO TFT was fabricated using the formed inorganic thin film as a gate insulating film to confirm its properties.

We analyzed the drift current by charged particles according to the loading methods applied into a closed cell by electronic ink at a reflective-type display panel using an electrophoretic mechanism. For this experiment, various panels were fabricated with injection voltages for electronic ink taking values in the range -4~0 V. The size of each cell was 220 μm × 220 μm and height of the barrier rib was 54.28 μm. The electronic ink was fabricated by mixing electrically neutral fluid and single-charge white particles. Drift current was measured by moving charged particles. A biasing voltage of 6 V was applied to the display panel. As a result, the drift current was proportional to the injection voltage for electronic ink, but it decreased in case of an injection voltage above -3 V. Our experimentation ascertained that the concentration of charged particles injected into closed cells is controlled by the injection voltage and the selective injection of charged particles above movable q/m is possible.

An investigation was conducted to determine whether the ratio of the fluid to the charged particles affects the panel reflexibility rate and the drifting current flowing in the panel, in electrophoretic-based electronic paper. In this regard, three panels were produced in this study with the ratio of the charged particles to the fluid set as 1:5, 1:1, and 5:1. Each sample was driven using an identical input pulse, for which the current flowing in the panel and the output voltage of the photodiode were measured for the panel reflexibility rate. Consequently, the drifting current initially exhibited a peak value and a saturated value at a later point. This value was proportional to the ratio of the charged particles, and it was similar to this ratio when it is higher than 1:1. The output voltage of the photodiode due to the panel reflexibility rate was proportional to the ratio of the charged particles. However, the response speed decreased if the ratio was higher than 1:1. It is expected that the results of this study will contribute to the analysis of the charging of charged particles in electrophoretic-based electronic paper, and the selection of an appropriate concentration.

1,200 V class junction barrier schottky (JBS) diodes and schottky barrier diodes (SBD) were simultaneously fabricated on the same 4H-SiC wafer. The resulting diodes were characterized at temperatures from room temperature to 473 K and subsequently compared in terms of their respective I-V characteristics. The parameters deduced from the observed I-V measurements, including ideality factor and series resistance, indicate that, as the temperature increases, the threshold voltage decreases whereas the ideality factor and barrier height increase. As JBS diodes have both Schottky and PN junction structures, the proper depletion layer thickness, R_on, and electron mobility values must be determined in order to produce diodes with an effective barrier height. The comparison results showed that the JBS diodes exhibit a larger effective barrier height compared to the SBDs.

Silicon carbide is widely used in power semiconductor devices owing to its high energy gap. In particular, Schottky barrier diode (SBD) and PiN diodes fabricated on 4H-SiC wafers are being applied to various fields such as power devices. The characteristics of SBD and PiN diodes can be extracted from C-V and I-V characteristics. The measured Schottky barrier height (SBH) was 1.23 eV in the temperature range of 298~473 K, and the average ideal factor is 1.17. The results show that the device with the Schottky contact is characterized by the theory of thermal emission. As the temperature increases, the parameters are changed and the Vth is shifted to lower voltages.

In this study, an epoxy insulation barrier for high voltage GIS was developed using epoxy and a filler with a Young`s modulus of 11 GPa. The material was investigated using a simulation of the principal stress, displacement, and safety factors while optimizing the profile shape. The simulation showed that thelarger Young`s modulus of the Al₂O₃ filler compared to the SiO₂ in the epoxy insulation can contribute to an increase in resistance to mechanical fracturing for theoptimized profile barrier in high voltage GIS. In addition, the safety factor was improved by 10%. It can be concluded that the mechanical fracturing properties of the insulation barrier can be enhanced by increasing the content of the elastic filler, Al₂O₃, for high voltage GIS applications.

Hydrogenated Amorphous Silicon (a-Si:H) is used as an emitter layer in HIT (heterojunction with Intrinsic Thin layer) solar cells. Its low band gap and low optical properties (low transmittance and high absorption) cause parasitic absorption on the front side of a solar cell that significantly reduces the solar cell blue response. To overcome this, research on CSC (carrier Selective Contacts) is being actively carried out to reduce carrier recombination and improve carrier transportation as a means to approach the theoretical efficiency of silicon solar cells. Among CSC materials, molybdenum oxide (MoO_x) is most commonly used for the hole transport layer (HTL) of a solar cell due to its high work function and wide band gap. This paper analyzes the electrical and optical properties of MoO_x thin films for use in the HTL of HIT solar cells. The optical properties of MoO_x show better performance than a-Si:H and μc-SiO_x:H.

We have investigated the characteristics of amorphous silicon (a-Si) thin-film solar cell by inserting barrier layer. The conversion efficiency of a-Si thin-film solar cells on graphite substrate shows nearly zero because of the surface roughness of the graphite substrate. To enhance the performance of solar cells, the surface morphology of the back side were modified by changing the barrier layer on graphite. The surface roughness of graphite substrate with the barrier layer grown by plasma enhanced chemical vapor deposition (PECVD) reduced from ~2 um to ~75 nm. In this study, the combination of the barrier layer on graphite substrate is important to increase solar cell efficiency. We achieved ~ 7.8% cell efficiency for an a-Si thin-film solar cell on graphite substrate with SiNx/SiOx stack barrier layer.

Citations

• Feasibility Study of the Introduction of Hydrogen System and Plus DR on Campus MG
  Gyuha Woo, Soojin Park, Yongbeum Yoon
  New & Renewable Energy.2022; 18(1): 35.     CrossRef

Graphene has a monolayer crystal structure formed with C-atoms and has been used as a base layer of HETs (hot electron transistors). Graphene HETs have exhibited the operation at THz frequencies and higher current on/off ratio than that of Graphene FETs. In this article, we report on the preliminary results of current characteristics from the HETs which are fabricated utilizing highly doped Si collector, graphene base, and 5 nm thin Al2O3 tunnel layers between the base and Ti emitter. We have observed E-B forward currents are inherited to tunneling through Al2O3 layers, but have not noticed the Schottky barrier blocking effect on B-C forward current at the base/collector interface. At the common-emitter configuration, under a constant VBE between,0~1.2V, Ic has increased linearly with VCE forVCE＜VCE indicating the saturation region. As the VCE increases further, a plateau of Ic vs. VCE has appeared slightly at VCE-VBE, denoting forward-active region. With further increase of, has kept increasing probably due to tunneling through thin Schottky barrier between B/C. Thus the current on/off ration has exhibited to be 50. To improve hot electron effects, we propose the usage of low doped Si substrate, insertion of barrier layer between B/C, or substrates with low electron affinity.

Citations

• Device model for pixelless infrared image up-converters based on polycrystalline graphene heterostructures
  V. Ryzhii, M. S. Shur, M. Ryzhii, V. E. Karasik, T. Otsuji
  Journal of Applied Physics.2018;[Epub]     CrossRef

Some insulating materials are organized and analyzed with variables to obtain the optimized profile of encapsulated three phase of epoxy barrier which is applied to gas compartment and supporting conductors for high voltage GIS (gas insulated switchgear). The high voltage GIS is used in electrical power system and operating reliability. In this paper, optimization possibility of barrier shape including both electrical insulation performance and mechanical strength, premised on that condition minimizing volume and light weight should be kept for high voltage GIS, could be achieved by analysis simulation. As a result, filling material which is lower permittivity such as SiO2 instead of Al2O3 properly to the epoxy material, can be improved to increase the electrical insulation performance and mechanical strength for an optimized profile barrier of a high voltage GIS.

The temperature dependent characteristics on the properties of SiC Schottky Diode has beeninvestigated. In this study, the temperature dependent current-voltage characteristics of the SiC Schottkydiode were measured in the range of 300 ∼ 500 K. Divided into pre- and post- irradiated device wasmeasured. The barrier height after irradiation device at 500 K increased 0.15 eV compared to 300 K, thebarrier height of pre- neutron irradiated Schottky diode increased 0.07 eV. The effective barrier heightafter irradiation increased from 0.89 eV to 1.05 eV. And ideality factor of neutron irradiated Schottkydiode at 500 K decreased 0.428 compared to 300 K, the ideality factor of pre- neutron irradiated Schottkydiode decreased 0.354. Also, a slight positive shift in threshold voltage from 0.53 to 0.68 V. we analyzedthe effective barrier height and ideality factor of SiC Schottky diode as function of temperature.

The effect of neutron irradiation on the properties of SiC Schottky Diode has been investigated. SiC Schottky diodes were irradiated under neutron fluences and compared to the reference samples to study the radiation-induced changes in device properties. The condition of neutron irradiation was 3.1×1010n/cm2. The current density after irradiation decreased from 12.7 to 0.75 A/cm2. Also, a slight positive shift (ΔVth= 0.15 V) in threshold voltage from 0.53 to 0.68 V and a positive change (ΔΦB= 0.16 eV) of barrier height from 0.89 to 1.05 eV have been observed by the neutron irradiation, which is attributed to charge damage in the interface between the metal and the SiC layer.

We optimize electrical and optical properties of thermal and SF6 plasma treated indium tin oxide (ITO)/Al based reflector for high-power ultraviolet (UV) light-emitting diodes (LEDs). After thermal and SF6 plasma treatments of ITO/Al reflector, the specific contact resistance decreased from 1.04×10(-3) Ω·cm2 to 9.12×10(-4) Ω·cm2, while the reflectance increased from 58% to 70% at the 365 nm wavelength. The low resistance and high reflectance of ITO/Al reflector are attributed to the reduced Schottky barrier height (SBH) between the ITO and AlGaN by large electronegativity of fluorine species and reduced interface roughness between the ITO and Al, respectively.

We report on the formation mechanism of large Schottky barrier height (SBH) of nonalloyed Cr Schottky contacts on strained Al0.25Ga0.75N/GaN. Based on the current-voltage (I-V) and capacitance-voltage (C-V) data, the SBHs are determined to be 1.98 (±0.02) and 2.07 (±0.02) eV from the thermionic field emission and two-dimensional electron gas (2DEG) calculations, respectively. Possible formation mechanism of large SBH will be described in terms of the formation of Cr-O chemical bonding at the interface between Cr and AlGaN/GaN, low binding-energy shift to surface Fermi level, and the reduction of 2DEG electrons.

This paper describes the fabrication and characteristics of a Au/Ni/Ti/3C-SiC Schottky diode with field plate (FP) edge termination. The Schottky contacts were annealed for 30 min at temperatures ranging from 0 to 800℃. At annealing temperature of 600℃, it showed an inhomogeneous Schottky barrier and had the best electrical characteristics. However, the annealing of 800℃ replaced it with ohmic behaviors because of the formation of many different types of nickel silicides. The fabricated Schottky diode had a breakdown voltage of 200 V, Schottky barrier height of 1.19 eV and worked normally even at 200℃.

Dielectric Barrier Discharge (DBD) reactor with sinsodual AC type of power supply is very widely adopted for its compact size and effective discharging mechanism to generate high density of ozone radicals. However, at the aspect of design on power supply, its optimal switching conditions and topology is achieved by empirical test. Therefore, throughout this paper, it is proposed a design method of DBD power supply to guarantee a maximum ozone yield rate in accordance with DBD reactor modification and impedance variation when rapid gas discharging in the DBD reactor is proceeded.

Copper pillar tin bump (CPTB) was developed for high density chip interconnect technology. Copper pillar tin bumps that have 100μm pitch were introduced with fabrication process using a KM-1250 dry film photoresist (DFR), copper electroplating method and Sn electro-less plating method. Mechanical shear strength measurements were introduced to characterize the bonding process as a function of thermo-compression. Shear strength has maximum value with 330℃ and 500 N thermo-compression process. Through the simulation work, it was proved that when the copper pillar tin bump decreased in its size, it was largely affected by the copper oxidation.

By improving the conducting process of metal source/drain (S/D) in direct contact with the channel, schottky barrier metal-oxide-semiconductor field effect transistors (SB MOSFETs) reveal low extrinsic parasitic resistances, offer easy processing and allow for well-defined device geometries down to the smallest dimensions. In this work, we investigated the arrhenius plots of the SB MOSFETs with different S/D schottky barrier (SB) heights between simulated and experimental current-voltage characteristics. We fabricated SB MOSFETs using difference S/D metals such as Cr (ФCr~4.5 eV) and Ni (ФNi~5.2 eV), respectively. Schottky barrier height (ФB) of the fabricated devices were measured to be 0.25~0.31 eV (Cr-S/D device) and 0.16~0.18 eV (Ni-S/D device), respectively in the temperature range of 300 K and 475 K. The experimental results have been compared with 2-dimensional simulations, which allowed bandgap diagram analysis.

Abstract: We have fabricated schottky barrier diode (SBDs) using polar (c-plane) and non polar (a-, m-plane) n-type 6H-SiC wafers. Ni/SiC ohmic contact was accomplished on the backside of the SiC wafers by thermal evaporation and annealed for 20minutes at 950℃ in mixture gas (N(2) 90% + H(2) balanced). The specific contact resistance was 3.6×10-4 Ω㎝2 after annealing at 950℃. The XRD results of the alloyed contact layer show that formation of NiSi2 layer might be responsible for the ohmic contact. The active rectifying electrode was formed by the same thermal evaporation of Ni thin film on topside of the SiC wafers and annealed for 5 minutes at 500℃ in mixture gas (N(2) 90% + H(2) balanced). The electrical properties of SBDs have been characterized by means of I-V and C-V curves. The forward voltage drop is about 0.95 V, 0.8 V and 0.8 V for c-, a- and m-plane SiC SBDs respectively. The ideality factor (η) of all SBDs have been calculated from log(I)-V plot. The values of ideality factor were 1.46, 1.46 and 1.61 for c-, a- and m-plane SiC SBDs, respectively. The schottky barrier height (SBH) of all SBDs have been calculated from C-V curve. The values of SBH were 1.37 eV, 1.09 eV and 1.02 eV for c-, a- and m-plane SiC SBDs, respectively.